Infineon Technologies AG has extended its easy-to-design EiceDRIVER X3 Compact (1ED31xx) and the highly flexible EiceDRIVER X3 Enhanced Analog (1ED34xx) and Digital (1ED38xx) gate driver families.
Infineon Technologies has launched its next-generation 144Mb Quad Data Rate II+ (QDR-II+) SRAM that is certified to the DLA Qualified Manufacturers List Class V (QML-V).
Infineon Technologies AG has added the new CoolGaN IPS family of integrated power stage (IPS) products to its wide portfolio of WBG power devices. The initial IPS portfolio comprises half-bridge and single-channel products aimed at low-to-medium power applications, including chargers and adapters and SMPS.
Infineon Technologies widens its level-shift EiceDRIVER portfolio with a 1200V three-phase gate driver. It is founded on the company’s unique silicon-on-insulator (SOI) technology.
Infineon 1ED44175N01B 25V Low-Side Gate Drivers provide integrated OCP, fault reporting, and facilitate functionality.
The Infineon Technologies CIPOS is the newest generation of Intelligent Power Modules, providing very high power density for variable-speed motor drives in products such as range hoods, room air conditioning, washing machines, and industrial and commercial fans.
Infineon is manufacturing the latest integrated point of load (IPOL), a fully integrated voltage regulator that provides PMBUS, SVID and PVID capabilities to power Intel CPU POL rails, chipsets and ASICs / FPGAs.
Infineon CoolMOS C7 Power MOSFETs are claimed to be a revolutionary step forward in technology, providing the world’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
Infineon BTS50015-1TAD Smart high-side power switch is housed in a PG-TO-263-7-8 package and provides protective functions and diagnosis.
Infineon’s XMC4700 and XMC4800 devices are members of the XMC4000 family of microcontrollers based on the ARM Cortex-M4 processor core.
Infineon’s new 500V CoolMOS CE MOSFET Series is offering a superior price-performance ratio while meeting higher efficiency standards.
Infineon’s phase control thyristor modules (PCTs) are assembled with a pressure contact technology with an electrical insulated base which consists of an isolated copper base plate in a range of sizes from 20mm to 60mm.
Infineon OptiMOS 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. The devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements.
Infineon’s BTN8962TA integrated high-current half-bridge for motor-drive applications is part of the NovalithIC family, combining one p-channel high-side MOSFET and one n-channel low-side MOSFET with an integrated driver IC in one package.
Infineon’s IFX54441 wide input range low-noise LDO regulators. The micropower, low-noise, low dropout voltage regulators that are available in compact SMD packages. Each device is capable of supplying an output current of 300mA with a dropout voltage of only 270mV.
Infineon’s compact signal power MOSFETs are in seven industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. The devices are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements.
