Página 149 - Transistores - FET, MOSFET - Arreglos | Productos semiconductores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Arreglos

Registros 5.684
Página  149/203
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
AO8810#A
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 7A 8-TSSOP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
Paquete: 8-TSSOP (0.173", 4.40mm Width)
En existencias3.424
Logic Level Gate
20V
7A
20 mOhm @ 7A, 4.5V
1.1V @ 250µA
14nC @ 4.5V
1295pF @ 10V
1.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
AO8804_100
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
Paquete: 8-TSSOP (0.173", 4.40mm Width)
En existencias2.100
Logic Level Gate
20V
-
13 mOhm @ 8A, 10V
1V @ 250µA
17.9nC @ 4.5V
1810pF @ 10V
1.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot AO4801AS
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 5A 8SOIC

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias268.596
-
-
-
-
-
-
-
-
-
-
-
-
EPC2102ENG
EPC

TRANS GAN 2N-CH 60V BUMPED DIE

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 23A
  • Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 7mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
Paquete: Die
En existencias7.440
GaNFET (Gallium Nitride)
60V
23A
4.4 mOhm @ 20A, 5V
2.5V @ 7mA
6.8nC @ 5V
830pF @ 30V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
PMDPB95XNE,115
NXP

MOSFET 2N-CH 30V 2.4A HUSON6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 15V
  • Power - Max: 475mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020-6
Paquete: 6-UDFN Exposed Pad
En existencias2.048
Logic Level Gate
30V
2.4A
120 mOhm @ 2A, 4.5V
1.5V @ 250µA
2.5nC @ 4.5V
143pF @ 15V
475mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
DFN2020-6
hot AON4807
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 4A 8DFN

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 68 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
  • Power - Max: 1.9W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-DFN (3x2)
Paquete: 8-SMD, Flat Lead
En existencias209.700
Logic Level Gate
30V
4A
68 mOhm @ 4A, 10V
2.3V @ 250µA
10nC @ 10V
290pF @ 15V
1.9W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-DFN (3x2)
hot NTJD2152PT1G
ON Semiconductor

MOSFET 2P-CH 8V 0.775A SOT-363

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 775mA
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 8V
  • Power - Max: 270mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias902.964
Logic Level Gate
8V
775mA
300 mOhm @ 570mA, 4.5V
1V @ 250µA
4nC @ 4.5V
225pF @ 8V
270mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
APTC80A10SCTG
Microsemi Corporation

MOSFET 2N-CH 800V 42A SP4

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 42A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 21A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6761pF @ 25V
  • Power - Max: 416W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
Paquete: SP4
En existencias3.040
Standard
800V
42A
100 mOhm @ 21A, 10V
3.9V @ 3mA
273nC @ 10V
6761pF @ 25V
416W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
DMC2450UV-13
Diodes Incorporated

MOSFET N/P-CH 20V SOT563

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
  • Rds On (Max) @ Id, Vgs: 480 mOhm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
Paquete: SOT-563, SOT-666
En existencias6.128
Standard
20V
1.03A, 700mA
480 mOhm @ 200mA, 5V
900mV @ 250µA
0.5nC @ 4.5V
37.1pF @ 10V
450mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot TSM9926DCS RLG
TSC America Inc.

MOSFET, DUAL, N-CHANNEL, TRENCH,

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 562pF @ 8V
  • Power - Max: 1.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias11.172
Standard
20V
6A (Tc)
30 mOhm @ 6A, 10V
600mV @ 250µA
7.1nC @ 4.5V
562pF @ 8V
1.6W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMP58D0SV-7
Diodes Incorporated

MOSFET 2P-CH 50V 0.16A SOT-563

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 160mA
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 100mA, 5V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 25V
  • Power - Max: 400mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
Paquete: SOT-563, SOT-666
En existencias3.408
Logic Level Gate
50V
160mA
8 Ohm @ 100mA, 5V
2.1V @ 250µA
-
27pF @ 25V
400mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
CCS020M12CM2
Cree/Wolfspeed

MOSFET 6N-CH 1200V 29.5A MODULE

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 29.5A
  • Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 61.5nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 800V
  • Power - Max: 167W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
Paquete: Module
En existencias2.096
Standard
1200V (1.2kV)
29.5A
98 mOhm @ 20A, 20V
2.2V @ 1mA (Typ)
61.5nC @ 20V
900pF @ 800V
167W
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
hot SIB900EDK-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 1.5A SC-75-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A
  • Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-75-6L Dual
  • Supplier Device Package: PowerPAK? SC-75-6L Dual
Paquete: PowerPAK? SC-75-6L Dual
En existencias144.000
Logic Level Gate
20V
1.5A
225 mOhm @ 1.6A, 4.5V
1V @ 250µA
1.7nC @ 4.5V
-
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-75-6L Dual
PowerPAK? SC-75-6L Dual
APTMC120AM08CD3AG
Microsemi Corporation

MOSFET 2N-CH 1200V 250A D3

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 250A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 200A, 20V
  • Vgs(th) (Max) @ Id: 2.2V @ 10mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 490nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 1000V
  • Power - Max: 1100W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: D-3 Module
  • Supplier Device Package: D3
Paquete: D-3 Module
En existencias6.352
Standard
1200V (1.2kV)
250A
10 mOhm @ 200A, 20V
2.2V @ 10mA (Typ)
490nC @ 20V
9500pF @ 1000V
1100W
-40°C ~ 150°C (TJ)
Chassis Mount
D-3 Module
D3
hot DMP3098LSD-13
Diodes Incorporated

MOSFET 2P-CH 30V 4.4A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 336pF @ 25V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias578.628
Logic Level Gate
30V
4.4A
65 mOhm @ 5A, 10V
2.1V @ 250µA
7.8nC @ 10V
336pF @ 25V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot SLA5201
Sanken

MOSFET 3N/3P-CH 600V 7A 15-SIP

  • FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: 15-SIP, Exposed Tab, Formed Leads
  • Supplier Device Package: 15-SIP
Paquete: 15-SIP, Exposed Tab, Formed Leads
En existencias6.864
Standard
600V
7A
-
-
-
-
-
-
Through Hole
15-SIP, Exposed Tab, Formed Leads
15-SIP
hot FDS6910
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 7.5A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias472.332
Logic Level Gate
30V
7.5A
13 mOhm @ 7.5A, 10V
3V @ 250µA
24nC @ 10V
1130pF @ 15V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
GT090N06D52
Goford Semiconductor

MOSFET 2N-CH 60V 40A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1011pF @ 30V
  • Power - Max: 62W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-DFN (4.9x5.75)
  • Supplier Device Package: 8-PowerTDFN
Paquete: -
Request a Quote
-
60V
40A (Tc)
14mOhm @ 14A, 10V
2.5V @ 250µA
24nC @ 10V
1011pF @ 30V
62W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (4.9x5.75)
8-PowerTDFN
DMTH6016LPD-13
Diodes Incorporated

MOSFET 2N-CH 60V 9.2A PWRDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
  • Power - Max: 2.5W (Ta), 37.5W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
Paquete: -
En existencias15.000
-
60V
9.2A (Ta), 33.2A (Tc)
19mOhm @ 10A, 10V
2.5V @ 250µA
17nC @ 10V
864pF @ 30V
2.5W (Ta), 37.5W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8
MSCSM70HM19T3AG
Microchip Technology

SIC 4N-CH 700V 124A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
  • Power - Max: 365W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
Paquete: -
En existencias24
-
700V
124A (Tc)
19mOhm @ 40A, 20V
2.4V @ 4mA
215nC @ 20V
4500pF @ 700V
365W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
CAB760M12HM3
Wolfspeed, Inc.

SIC 2N-CH 1200V 1015A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 1015A (Tc)
  • Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 280mA
  • Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
Paquete: -
En existencias39
-
1200V (1.2kV)
1015A (Tc)
1.73mOhm @ 760A, 15V
3.6V @ 280mA
2724nC @ 15V
79400pF @ 800V
-
-40°C ~ 175°C (TJ)
Chassis Mount
Module
Module
MCB20P1200LB-TRR
IXYS

SIC 2N-CH 1200V 9SMPD

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 9-PowerSMD
  • Supplier Device Package: 9-SMPD-B
Paquete: -
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-
1200V (1.2kV)
-
-
-
-
-
-
-
Surface Mount
9-PowerSMD
9-SMPD-B
IRF7507TR
Infineon Technologies

MOSFET N/P-CH 20V MICRO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 1.7A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
  • Power - Max: 1.25W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: Micro8™
Paquete: -
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Logic Level Gate
20V
2.4A, 1.7A
140mOhm @ 1.7A, 4.5V
700mV @ 250µA
8nC @ 4.5V
260pF @ 15V
1.25W
-
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Micro8™
SCH2408-TL-E-ON
onsemi

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
G33N03D3
Goford Semiconductor

MOSFET 2N-CH 30V 30A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 837pF @ 15V
  • Power - Max: 13W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-DFN (3x3)
Paquete: -
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-
30V
28A (Tc)
11mOhm @ 16A, 10V
2.5V @ 250µA
16nC @ 10V
837pF @ 15V
13W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-DFN (3x3)
MSCSM120AM08T3AG
Microchip Technology

SIC 2N-CH 1200V 337A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 12mA
  • Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V
  • Power - Max: 1.409kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
1200V (1.2kV)
337A (Tc)
7.8mOhm @ 160A, 20V
2.8V @ 12mA
928nC @ 20V
12100pF @ 1000V
1.409kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
DMN52D0UDW-7
Diodes Incorporated

MOSFET BVDSS: 31V~40V SOT363 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 42.3pF @ 25V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paquete: -
Request a Quote
-
50V
350mA (Ta)
2Ohm @ 50mA, 5V
1V @ 250µA
1.5nC @ 10V
42.3pF @ 25V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMNH6035SPDWQ-13
Diodes Incorporated

MOSFET 2N-CH 60V 33A POWERDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V
  • Power - Max: 2.4W (Ta), 68W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type R)
Paquete: -
Request a Quote
-
60V
33A (Tc)
35mOhm @ 15A, 10V
3V @ 250µA
16nC @ 10V
879pF @ 25V
2.4W (Ta), 68W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
8-PowerTDFN
PowerDI5060-8 (Type R)