Página 147 - Transistores - FET, MOSFET - Arreglos | Productos semiconductores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Arreglos

Registros 5.684
Página  147/203
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF6723M2DTRPBF
Infineon Technologies

MOSFET 2N-CH 30V 15A DIRECTFET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
  • Power - Max: 2.7W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DirectFET? Isometric MA
  • Supplier Device Package: DIRECTFET? MA
Paquete: DirectFET? Isometric MA
En existencias45.684
Logic Level Gate
30V
15A
6.6 mOhm @ 15A, 10V
2.35V @ 25µA
14nC @ 4.5V
1380pF @ 15V
2.7W
-55°C ~ 175°C (TJ)
Surface Mount
DirectFET? Isometric MA
DIRECTFET? MA
hot IRF7504TR
Infineon Technologies

MOSFET 2P-CH 20V 1.7A MICRO8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: Micro8?
Paquete: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
En existencias19.296
Logic Level Gate
20V
1.7A
270 mOhm @ 1.2A, 4.5V
700mV @ 250µA
8.2nC @ 4.5V
240pF @ 15V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Micro8?
APTC60DSKM70T3G
Microsemi Corporation

MOSFET 2N-CH 600V 39A SP3

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 39A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
  • Power - Max: 250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
Paquete: SP3
En existencias2.816
Standard
600V
39A
70 mOhm @ 39A, 10V
3.9V @ 2.7mA
259nC @ 10V
7000pF @ 25V
250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
hot SI3850ADV-T1-E3
Vishay Siliconix

MOSFET N/P-CH 20V 1.4A 6TSOP

  • FET Type: N and P-Channel, Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A, 960mA
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.08W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
Paquete: SOT-23-6 Thin, TSOT-23-6
En existencias379.080
Logic Level Gate
20V
1.4A, 960mA
300 mOhm @ 500mA, 4.5V
1.5V @ 250µA
1.4nC @ 4.5V
-
1.08W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
SI1970DH-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 1.3A SC70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A
  • Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 15V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6 (SOT-363)
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias5.536
Logic Level Gate
30V
1.3A
225 mOhm @ 1.2A, 4.5V
1.6V @ 250µA
3.8nC @ 10V
95pF @ 15V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6 (SOT-363)
FDG6322C_D87Z
Fairchild/ON Semiconductor

MOSFET N/P-CH 25V SC70-6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 220mA, 410mA
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias4.672
Logic Level Gate
25V
220mA, 410mA
4 Ohm @ 220mA, 4.5V
1.5V @ 250µA
0.4nC @ 4.5V
9.5pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
hot FDS6982
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias506.724
Logic Level Gate
30V
6.3A, 8.6A
28 mOhm @ 6.3A, 10V
3V @ 250µA
12nC @ 5V
760pF @ 10V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot NTMD2C02R2
ON Semiconductor

MOSFET N/P-CH 20V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A, 3.4A
  • Rds On (Max) @ Id, Vgs: 43 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias7.296
Logic Level Gate
20V
5.2A, 3.4A
43 mOhm @ 4A, 4.5V
1.2V @ 250µA
20nC @ 4.5V
1100pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AON6812
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 27A 8-DFN

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 27A
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 15V
  • Power - Max: 4.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: 8-DFN-EP (5.2x5.55)
Paquete: 8-SMD, Flat Lead Exposed Pad
En existencias4.288
Logic Level Gate
30V
27A
4 mOhm @ 20A, 10V
2.2V @ 250µA
34nC @ 10V
1720pF @ 15V
4.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead Exposed Pad
8-DFN-EP (5.2x5.55)
DMP2060UFDB-13
Diodes Incorporated

MOSFET 2P-CH 20V 3.2A 6UDFN

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
Paquete: 6-UDFN Exposed Pad
En existencias6.496
Standard
20V
3.2A
90 mOhm @ 2.9A, 4.5V
1.4V @ 250µA
18nC @ 8V
881pF @ 10V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMP2100UFU-13
Diodes Incorporated

MOSFET 2P-CH 20V U-DFN2030-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFDFN Exposed Pad
  • Supplier Device Package: U-DFN2030-6
Paquete: 6-UFDFN Exposed Pad
En existencias7.248
Standard
20V
5.7A
38 mOhm @ 3.5A, 10V
1.4V @ 250µA
21.4nC @ 10V
906pF @ 10V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UFDFN Exposed Pad
U-DFN2030-6
ALD110900ASAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 4V
  • Vgs(th) (Max) @ Id: 10mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias6.224
Standard
10.6V
-
500 Ohm @ 4V
10mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
BSM080D12P2C008
Rohm Semiconductor

SIC POWER MODULE-1200V-80A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 80A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 4V @ 13.2mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
  • Power - Max: 600W
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
Paquete: Module
En existencias7.440
Standard
1200V (1.2kV)
80A
-
4V @ 13.2mA
-
800pF @ 10V
600W
175°C (TJ)
Chassis Mount
Module
Module
hot DMC1017UPD-13
Diodes Incorporated

MOSFET N/P-CH 12V 9.5A/6.9A SMD

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1787pF @ 6V
  • Power - Max: 2.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
Paquete: 8-PowerTDFN
En existencias60.000
Standard
12V
9.5A, 6.9A
17 mOhm @ 11.8A, 4.5V
1.5V @ 250µA
35.4nC @ 10V
1787pF @ 6V
2.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8
IPG20N04S4L08ATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 22µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
  • Power - Max: 54W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
Paquete: 8-PowerVDFN
En existencias49.350
Logic Level Gate
40V
20A
8.2 mOhm @ 17A, 10V
2.2V @ 22µA
39nC @ 10V
3050pF @ 25V
54W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-4
MMBT7002KDW-AQ
Diotec Semiconductor

MOSFET SOT363 N+N 60V 3OHM 150C

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 300mA
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 1.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 440pC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 25V
  • Power - Max: 295mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paquete: -
Request a Quote
Logic Level Gate
60V
300mA
3Ohm @ 500mA, 10V
1.75V @ 250µA
440pC @ 4.5V
21pF @ 25V
295mW
-55°C ~ 150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
SOT-363
MSCSM120HM16CTBL3NG
Microchip Technology

SIC 4N-CH 1200V 150A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 150A
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
  • Power - Max: 560W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
1200V (1.2kV)
150A
16mOhm @ 80A, 20V
2.8V @ 2mA
464nC @ 20V
6040pF @ 1000V
560W
-55°C ~ 175°C (TJ)
Chassis Mount
Module
-
SP8M5FRATB
Rohm Semiconductor

MOSFET N/P-CH 30V 6A/7A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 28mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 25nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 2600pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: -
En existencias30
-
30V
6A (Ta), 7A (Ta)
30mOhm @ 6A, 10V, 28mOhm @ 7A, 10V
2.5V @ 1mA
7.2nC @ 5V, 25nC @ 5V
520pF @ 10V, 2600pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMN52D0UVQ-7
Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT563 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
  • Power - Max: 480mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
Paquete: -
Request a Quote
-
50V
480mA (Ta)
2Ohm @ 50mA, 5V
1V @ 250µA
1.5nC @ 10V
39pF @ 25V
480mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
HP8MA2TB1
Rohm Semiconductor

MOSFET N/P-CH 30V 18A/15A 8HSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta)
  • Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V
  • Power - Max: 3W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
Paquete: -
En existencias6.912
-
30V
18A (Ta), 15A (Ta)
9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
2.5V @ 1mA
22nC @ 10V, 25nC @ 10V
1100pF @ 15V, 1250pF @ 15V
3W (Ta)
150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP
AOC3862
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XDFN
  • Supplier Device Package: 6-DFN (3.55x1.77)
Paquete: -
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-
-
-
-
1.25V @ 250µA
46nC @ 4.5V
-
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
6-XDFN
6-DFN (3.55x1.77)
RJK0216DPA-00-J53
Renesas Electronics Corporation

MOSFET 2N-CH 25V 15A/32A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 15A, 32A
  • Rds On (Max) @ Id, Vgs: 9.2mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 10V
  • Power - Max: 10W, 20W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WFDFN
  • Supplier Device Package: 8-DFN (5x6)
Paquete: -
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Logic Level Gate, 4.5V Drive
25V
15A, 32A
9.2mOhm @ 7.5A, 10V
-
6.2nC @ 4.5V
1130pF @ 10V
10W, 20W
150°C (TJ)
Surface Mount
8-WFDFN
8-DFN (5x6)
FDWS9520L-F085
onsemi

MOSFET 2P-CH 40V 60.8A 8PQFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 60.8A (Tc)
  • Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 20V
  • Power - Max: 75W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-PQFN (5x6)
Paquete: -
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-
40V
60.8A (Tc)
12.5mOhm @ 20A, 10V
3V @ 250µA
33nC @ 10V
2370pF @ 20V
75W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-PQFN (5x6)
CMLDM7002AJ-TR-PBFREE
Central Semiconductor Corp

MOSFET 2N-CH 60V 0.28A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 280mA
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.59nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
Paquete: -
En existencias15.855
-
60V
280mA
2Ohm @ 500mA, 10V
2.5V @ 250µA
0.59nC @ 4.5V
50pF @ 25V
350mW
-65°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
NVMFD5C462NWFT1G
onsemi

MOSFET 40V S08FL DUAL

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Paquete: -
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-
-
-
-
-
-
-
-
-
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
MSCM20XM10T3XG
Microchip Technology

MOSFET 6N-CH 200V 108A SP3X

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.7mOhm @ 81A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 50V
  • Power - Max: 341W (Tc)
  • Operating Temperature: -40°C ~ 125°C (Tc)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3X
Paquete: -
En existencias33
-
200V
108A (Tc)
9.7mOhm @ 81A, 10V
5V @ 250µA
161nC @ 10V
10700pF @ 50V
341W (Tc)
-40°C ~ 125°C (Tc)
Chassis Mount
Module
SP3X
DMN2022UDH-13
Diodes Incorporated

MOSFET BVDSS: 8V 24V V-DFN3030-8

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
SQ4937EY-T1_GE3
Vishay Siliconix

MOSFET 2P-CH 30V 5A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
  • Power - Max: 3.3W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paquete: -
En existencias1.005
-
30V
5A (Tc)
75mOhm @ 3.9A, 10V
2.5V @ 250µA
15nC @ 10V
480pF @ 25V
3.3W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC