Página 152 - Transistores - FET, MOSFET - Arreglos | Productos semiconductores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Arreglos

Registros 5.684
Página  152/203
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IPG20N06S4L14ATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 13.7 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
  • Power - Max: 50W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
Paquete: 8-PowerVDFN
En existencias3.632
Logic Level Gate
60V
20A
13.7 mOhm @ 17A, 10V
2.2V @ 20µA
39nC @ 10V
2890pF @ 25V
50W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-4
BSO207PNTMA1
Infineon Technologies

MOSFET 2P-CH 20V 5.7A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1013pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: P-DSO-8
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias7.856
Logic Level Gate
20V
5.7A
45 mOhm @ 5.7A, 4.5V
1.2V @ 40µA
23.4nC @ 4.5V
1013pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
P-DSO-8
hot AO8804L
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
Paquete: 8-TSSOP (0.173", 4.40mm Width)
En existencias65.364
Logic Level Gate
20V
-
13 mOhm @ 8A, 10V
1V @ 250µA
17.9nC @ 4.5V
1810pF @ 10V
1.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot AO4946
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8.6A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 8.6A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1885pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias1.778.568
Logic Level Gate
30V
-
16 mOhm @ 8.6A, 10V
2.4V @ 250µA
31nC @ 10V
1885pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot SI3983DV-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 2.1A 6-TSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
Paquete: SOT-23-6 Thin, TSOT-23-6
En existencias156.300
Logic Level Gate
20V
2.1A
110 mOhm @ 2.5A, 4.5V
1.1V @ 250µA
7.5nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
SIZ904DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 12A POWERPAIR

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A, 16A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
  • Power - Max: 20W, 33W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerPair?
  • Supplier Device Package: 6-PowerPair?
Paquete: 6-PowerPair?
En existencias7.120
Logic Level Gate
30V
12A, 16A
24 mOhm @ 7.8A, 10V
2.5V @ 250µA
12nC @ 10V
435pF @ 15V
20W, 33W
-55°C ~ 150°C (TJ)
Surface Mount
6-PowerPair?
6-PowerPair?
SIA921EDJ-T4-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 4.5A SC70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 7.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
Paquete: PowerPAK? SC-70-6 Dual
En existencias6.432
Logic Level Gate
20V
4.5A
59 mOhm @ 3.6A, 4.5V
1.4V @ 250µA
23nC @ 10V
-
7.8W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
hot DMC2004LPK-7
Diodes Incorporated

MOSFET N/P-CH 20V 6-DFN

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 750mA, 600mA
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: 6-DFN1612 (1.2x1.6)
Paquete: 6-SMD, No Lead
En existencias420.000
Logic Level Gate
20V
750mA, 600mA
550 mOhm @ 540mA, 4.5V
1V @ 250µA
-
150pF @ 16V
500mW
-65°C ~ 150°C (TJ)
Surface Mount
6-SMD, No Lead
6-DFN1612 (1.2x1.6)
hot IRF7342PBF
Infineon Technologies

MOSFET 2P-CH 55V 3.4A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias6.416
Logic Level Gate
55V
3.4A
105 mOhm @ 3.4A, 10V
1V @ 250µA
38nC @ 10V
690pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
CSD87501LT
Texas Instruments

MOSFET 2N-CH 30V 10PICOSTAR

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-XFBGA
  • Supplier Device Package: 10-Picostar (3.37x1.47)
Paquete: 10-XFBGA
En existencias6.456
Logic Level Gate
-
-
-
2.3V @ 250µA
40nC @ 10V
-
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
10-XFBGA
10-Picostar (3.37x1.47)
hot IRF7904PBF
Infineon Technologies

MOSFET 2N-CH 30V 7.6A/11A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A
  • Rds On (Max) @ Id, Vgs: 16.2 mOhm @ 7.6A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
  • Power - Max: 1.4W, 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias117.360
Logic Level Gate
30V
7.6A, 11A
16.2 mOhm @ 7.6A, 10V
2.25V @ 25µA
11nC @ 4.5V
910pF @ 15V
1.4W, 2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMG6898LSDQ-13
Diodes Incorporated

MOSFET 2N-CH 20V 9.5A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 9.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V
  • Power - Max: 1.28W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias3.152
Standard
20V
9.5A
16 mOhm @ 9.4A, 4.5V
1.5V @ 250µA
26nC @ 10V
1149pF @ 10V
1.28W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
EPC2111ENGRT
EPC

TRANS GAN ASYMMETRICAL HALF BRID

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 590pF @ 15V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
Paquete: Die
En existencias56.010
GaNFET (Gallium Nitride)
30V
16A (Ta)
19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V
2.5V @ 5mA
2.2nC @ 5V, 5.7nC @ 5V
230pF @ 15V, 590pF @ 15V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
BUK9K8R7-40EX
Nexperia USA Inc.

MOSFET 2N-CH 40V 30A 56LFPAK

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V
  • Power - Max: 53W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
Paquete: SOT-1205, 8-LFPAK56
En existencias3.328
Logic Level Gate
40V
30A
8 mOhm @ 10A, 10V
2.1V @ 1mA
15.7nC @ 5V
2110pF @ 25V
53W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
hot FDG6317NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 0.7A SC70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 700mA
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 700mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 66.5pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias258.456
Logic Level Gate
20V
700mA
400 mOhm @ 700mA, 4.5V
1.5V @ 250µA
1.1nC @ 4.5V
66.5pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
hot DMG1016V-7
Diodes Incorporated

MOSFET N/P-CH 20V SOT563

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
  • Power - Max: 530mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
Paquete: SOT-563, SOT-666
En existencias49.912.500
Logic Level Gate
20V
870mA, 640mA
400 mOhm @ 600mA, 4.5V
1V @ 250µA
0.74nC @ 4.5V
60.67pF @ 16V
530mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot SI4532ADY-T1-E3
Vishay Siliconix

MOSFET N/P-CH 30V 3.7A 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A, 3A
  • Rds On (Max) @ Id, Vgs: 53 mOhm @ 4.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.13W, 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias847.224
Logic Level Gate
30V
3.7A, 3A
53 mOhm @ 4.9A, 10V
1V @ 250µA (Min)
16nC @ 10V
-
1.13W, 1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SLA5068
Sanken Electric USA Inc.

MOSFET 6N-CH 60V 7A 15ZIP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
  • Power - Max: 5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 15-SIP Exposed Tab, Formed Leads
  • Supplier Device Package: 15-ZIP
Paquete: -
Request a Quote
-
60V
7A
100mOhm @ 3.5A, 10V
2V @ 250µA
-
660pF @ 10V
5W
150°C (TJ)
Through Hole
15-SIP Exposed Tab, Formed Leads
15-ZIP
DMP32D9UDAQ-7B
Diodes Incorporated

MOSFET 2P-CH 30V 0.22A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 350nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 21.8pF @ 15V
  • Power - Max: 360mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: X2-DFN0806-6
Paquete: -
Request a Quote
-
30V
220mA (Ta)
5Ohm @ 100mA, 4.5V
1V @ 250µA
350nC @ 4.5V
21.8pF @ 15V
360mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-SMD, No Lead
X2-DFN0806-6
DMPH4023SPDWQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
FF1MR12KM1HP
Infineon Technologies

MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
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MSCSM120TAM11TPAG
Microchip Technology

SIC 6N-CH 1200V 251A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
  • Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 9mA
  • Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
  • Power - Max: 1.042kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
Paquete: -
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1200V (1.2kV)
251A (Tc)
10.4mOhm @ 120A, 20V
2.8V @ 9mA
696nC @ 20V
9060pF @ 1000V
1.042kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
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MTD3N25E1
onsemi

MOSFET N-CH 250V 3A

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
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PJL9830A_R2_00001
Panjit International Inc.

MOSFET 2N-CH 60V 4.8A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 4.8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 815pF @ 15V
  • Power - Max: 2.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: -
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60V
4.8A (Ta)
50mOhm @ 4.8A, 10V
2.5V @ 250µA
14nC @ 10V
815pF @ 15V
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
2SK443-6-TB-E-ON
onsemi

PNP/NPN EPITAXIAL PLANAR SILICON

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
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AO4612L
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 60V 4.5A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V, 105mOhm @ 3.2A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V, 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V, 1120pF @ 30V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paquete: -
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60V
4.5A (Ta), 3.2A (Ta)
56mOhm @ 4.5A, 10V, 105mOhm @ 3.2A, 10V
3V @ 250µA
10.5nC @ 10V, 20nC @ 10V
540pF @ 30V, 1120pF @ 30V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AO4813L
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 7.1A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1573pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paquete: -
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30V
7.1A (Ta)
25mOhm @ 7.1A, 10V
2.7V @ 250µA
30.9nC @ 10V
1573pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MSCSM70VR1M07CT6AG
Microchip Technology

SIC 2N-CH 700V 349A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 349A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 12mA
  • Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
  • Power - Max: 966W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
Paquete: -
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700V
349A (Tc)
6.4mOhm @ 120A, 20V
2.4V @ 12mA
645nC @ 20V
13500pF @ 700V
966W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
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