Diodos - Rectificadores
- Simple

SIDC110D170H

Infineon Technologies

DIODE GEN PURP 1.7KV 200A WAFER

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1700V
• Current - Average Rectified (Io): 200A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 200A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27µA @ 1700V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Sawn on foil
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: Die

JAN1N6627

Microsemi Corporation

DIODE GEN PURP 440V 1.75A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 440V
• Current - Average Rectified (Io): 1.75A
• Voltage - Forward (Vf) (Max) @ If: 1.35V @ 1.2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 2µA @ 440V
• Capacitance @ Vr, F: 40pF @ 10V, 1MHz
• Mounting Type: Through Hole
• Package / Case: E, Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: E, Axial

SF20JG-T

Diodes Incorporated

DIODE GEN PURP 600V 2A DO15

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-15
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: DO-204AC, DO-15, Axial

SB320-T

Diodes Incorporated

DIODE SCHOTTKY 20V 3A DO201AD

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: DO-201AD, Axial

B280-13

Diodes Incorporated

DIODE SCHOTTKY 80V 2A SMB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 790mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 7mA @ 80V
• Capacitance @ Vr, F: 75pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: DO-214AA, SMB

R7001205XXUA

Powerex Inc.

DIODE GEN PURP 1.2KV 550A DO200

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 550A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 15µs
• Current - Reverse Leakage @ Vr: 50mA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-200AA, A-PUK
• Supplier Device Package: DO-200AA, R62
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: DO-200AA, A-PUK

GKN130/08

GeneSiC Semiconductor

DIODE GEN PURP 800V 165A DO205AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 165A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 22mA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AA, DO-8, Stud
• Supplier Device Package: DO-205AA (DO-8)
• Operating Temperature - Junction: -40°C ~ 180°C

Paquete: DO-205AA, DO-8, Stud

VS-16FR10

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 16A DO203AA

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 1.23V @ 50A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 12mA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-203AA
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-203AA, DO-4, Stud

FESB16ATHE3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 16A TO263AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 975mV @ 16A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: 175pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NS8DTHE3_A/P

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: 55pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: TO-220-2

VF30100SG-M3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30A 100V ITO220AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 910mV @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Isolated Tab
• Supplier Device Package: ITO-220AB
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: TO-220-3 Isolated Tab

DGP15-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.5KV 1.5A DO204

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1500V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20µs
• Current - Reverse Leakage @ Vr: 5µA @ 1500V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-204AC, DO-15, Axial

1N5817-E3/53

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 1A DO204AL

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 3.1V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 20V
• Capacitance @ Vr, F: 125pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 125°C

Paquete: DO-204AL, DO-41, Axial

CDBF0130

Comchip Technology

DIODE SCHOTTKY 30V 100MA 1005

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 440mV @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 30µA @ 30V
• Capacitance @ Vr, F: 9pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 1005 (2512 Metric)
• Supplier Device Package: 1005/SOD-323F
• Operating Temperature - Junction: 125°C (Max)

Paquete: 1005 (2512 Metric)

SD101AWS-E3-18

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 150MW 60V SOD323

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 30mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 1ns
• Current - Reverse Leakage @ Vr: 200nA @ 50V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323
• Operating Temperature - Junction: -55°C ~ 125°C

Paquete: SC-76, SOD-323

ACGRBT305-HF

Comchip Technology

DIODE GEN PURP 1KV 3A 2114

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Capacitance @ Vr, F: 23pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, No Lead
• Supplier Device Package: 2114/DO-214AA
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: 2-SMD, No Lead

RS1MSWF-7

Diodes Incorporated

DIODE RECT STD 1000V 1A SOD123F

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 10µA @ 1000V
• Capacitance @ Vr, F: 3pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: SOD-123F

JANTX1N6638

Microsemi Corporation

DIODE GEN PURP 125V 300MA D5B

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 125V
• Current - Average Rectified (Io): 300mA
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20ns
• Current - Reverse Leakage @ Vr: 500nA @ 125V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: D, Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: D, Axial

VS-MBR735-M3

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 35V 7.5A TO220AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35 V
• Current - Average Rectified (Io): 7.5A
• Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 35 V
• Capacitance @ Vr, F: 400pF @ 5V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: -

BAT54W-HG3-08

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 30V 200MA SOD123

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 25 V
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: 125°C

Paquete: -

SOD4004

MDD

DIODE GEN PURP 400V 1A SOD123FL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123FL
• Supplier Device Package: SOD-123FL
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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SFM18PL-TP

Micro Commercial Co

DIODE GEN PURP 600V 1A SOD123FL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123FL
• Operating Temperature - Junction: -50°C ~ 150°C

Paquete: -

BAT42-A0

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 200MA DO35

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5 ns
• Current - Reverse Leakage @ Vr: 500 nA @ 25 V
• Capacitance @ Vr, F: 7pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35
• Operating Temperature - Junction: -65°C ~ 125°C

Paquete: -

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RB751V-40X_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 30V 30MA SOD323

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 30mA
• Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 nA @ 30 V
• Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

SIDC14D60E6X1SA3

Infineon Technologies

DIODE GEN PURP 600V 30A DIE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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MSASC75W100F-TR

Microchip Technology

DIODE SCHOTTKY 100V 75A THINKEY4

• Diode Type: Schottky, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 75A
• Voltage - Forward (Vf) (Max) @ If: 920 mV @ 75 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: ThinKey™4
• Supplier Device Package: ThinKey™4
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: -

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JAN1N5195UR

Microchip Technology

DIODE GP 180V 200MA DO213AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 180 V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: -

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SSL12

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 20V 1A DO214AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 390 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 20 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 125°C

Paquete: -