Diodos - Rectificadores
- Simple

HS183100R

Microsemi Corporation

DIODE MODULE 100V 180A HALF-PAK

• Diode Type: Schottky, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 180A
• Voltage - Forward (Vf) (Max) @ If: 910mV @ 180A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 100V
• Capacitance @ Vr, F: 4800pF @ 5V, 1MHz
• Mounting Type: Chassis Mount
• Package / Case: HALF-PAK
• Supplier Device Package: HALF-PAK
• Operating Temperature - Junction: -

Paquete: HALF-PAK

LLSD101C-TP

Micro Commercial Co

DIODE SCHOTTKY 40V 15MA MINIMELF

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 15mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 15mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 1ns
• Current - Reverse Leakage @ Vr: 200nA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-213AC, MINI-MELF, SOD-80

MUR450PFRLG

ON Semiconductor

DIODE GEN PURP 520V 4A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 520V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 95ns
• Current - Reverse Leakage @ Vr: 5µA @ 520V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-201AA, DO-27, Axial

SBM540-13

Diodes Incorporated

DIODE SCHOTTKY 40V 5A POWERMITE3

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Capacitance @ Vr, F: 250pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: Powermite?3
• Supplier Device Package: Powermite 3
• Operating Temperature - Junction: -55°C ~ 125°C

Paquete: Powermite?3

30WQ06FNTR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 3.5A DPAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 3.5A
• Voltage - Forward (Vf) (Max) @ If: 610mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-PAK (TO-252AA)
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

VS-30ETH06FP-N3

Vishay Semiconductor Diodes Division

DIODE FRED 30A 600V TO-220FP

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 2.6V @ 30A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: TO-220FP
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: TO-220-2 Full Pack

VI20100SGHM3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20A 100V TO-262AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.07V @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 350µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262AA
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA

BYV28-050-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 50V 3.5A SOD64

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 3.5A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 1µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: SOD-64, Axial
• Supplier Device Package: SOD-64
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: SOD-64, Axial

SR803 B0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 3

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 125°C

Paquete: DO-201AD, Axial

GF1GHE3/5CA

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO214BA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214BA
• Supplier Device Package: DO-214BA (GF1)
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-214BA

ES2FAHM2G

TSC America Inc.

DIODE, SUPER FAST, 2A, 300V, 35N

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 10µA @ 300V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-214AC, SMA

1N4944GP-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 1µA @ 400V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-204AL, DO-41, Axial

BAT54-HE3-18

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 200MA SOT23

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23
• Operating Temperature - Junction: 125°C (Max)

Paquete: TO-236-3, SC-59, SOT-23-3

RB578VAM100TR

Rohm Semiconductor

DIODE SCHOTTKY 100V 700MA TUMD2M

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 700mA
• Voltage - Forward (Vf) (Max) @ If: 850mV @ 700mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200nA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: TUMD2M
• Operating Temperature - Junction: 150°C (Max)

Paquete: 2-SMD, Flat Lead

US1G-TP

Micro Commercial Co

DIODE GEN PURP 400V 1A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-214AC, SMA

MBRM120LT3G

ON Semiconductor

DIODE SCHOTTKY 20V 1A POWERMITE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 400µA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: Powermite
• Operating Temperature - Junction: -55°C ~ 125°C

Paquete: DO-216AA

RF505BGE6STL

Rohm Semiconductor

DIODE GEN PURP 600V 5A TO252GE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252GE
• Operating Temperature - Junction: 150°C

Paquete: -

NTE6045

NTE Electronics, Inc

DIODE GEN PURP 1KV 60A DO5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AA, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: -

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SK5200L-TP

Micro Commercial Co

Interface

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 mA @ 200 V
• Capacitance @ Vr, F: 200pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC (DO-214AB)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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1N1344RA

Solid State Inc.

DIODE GEN PURP REV 200V 16A DO4

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-4
• Operating Temperature - Junction: -65°C ~ 200°C

Paquete: -

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SBR2U10LP-13

Diodes Incorporated

DIODE SBR 10V 2A 3DFN

• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 10 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 460 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60 ns
• Current - Reverse Leakage @ Vr: 2 mA @ 10 V
• Capacitance @ Vr, F: 102pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 3-UDFN
• Supplier Device Package: 3-X1-DFN1411
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: -

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JANTX1N6659R

Microchip Technology

DIODE GEN PURP 200V 15A TO254

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: 150pF @ 10V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-254-3, TO-254AA
• Supplier Device Package: TO-254
• Operating Temperature - Junction: -

Paquete: -

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JAN1N6911UTK2CS

Microchip Technology

DIODE SCHOTTKY 30V 25A THINKEY2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 540 mV @ 25 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1.2 mA @ 30 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: ThinKey™2
• Supplier Device Package: ThinKey™2
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: -

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VS-100BGQ015-N4

Vishay General Semiconductor - Diodes Division

SCHOTTKY RECT 15V 100A POWLRTAB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 15 V
• Current - Average Rectified (Io): 100A
• Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20 mA @ 15 V
• Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
• Mounting Type: Through Hole
• Package / Case: PowerTab®
• Supplier Device Package: PowerTab®
• Operating Temperature - Junction: -55°C ~ 125°C

Paquete: -

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S4D15120A

SMC Diode Solutions

DIODE SIL CARB 1.2KV 15A TO220AC

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 35 µA @ 1200 V
• Capacitance @ Vr, F: 1200pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC (TO-220-2)
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: -

FR306BULK

EIC SEMICONDUCTOR INC.

DIODE GEN PURP 800V 3A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 800 V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: -

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S6D02065E

SMC Diode Solutions

650V, 2A, DPAK, SIC SCHOTTKY DIO

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -

RBR3L40ADDTE25

Rohm Semiconductor

DIODE SCHOTTKY 40V 3A PMDS

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 µA @ 40 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: PMDS
• Operating Temperature - Junction: 150°C

Paquete: -