Toshiba Semiconductor and Storage Productos

2SK880-Y(TE85L,F)

Toshiba Semiconductor and Storage

JFET N-CH 50V 0.1W USM

• FET Type: N-Channel
• Voltage - Breakdown (V(BR)GSS): 50V
• Drain to Source Voltage (Vdss): -
• Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
• Current Drain (Id) - Max: -
• Voltage - Cutoff (VGS off) @ Id: 1.5V @ 100nA
• Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
• Resistance - RDS(On): -
• Power - Max: 100mW
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

Paquete: SC-70, SOT-323

TK16J60W,S1VQ

Toshiba Semiconductor and Storage

MOSFET N CH 600V 15.8A TO-3P(N)

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.7V @ 790µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 300V
• Vgs (Max): ±30V
• FET Feature: Super Junction
• Power Dissipation (Max): 130W (Tc)
• Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.9A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P(N)
• Package / Case: TO-3P-3, SC-65-3

Paquete: TO-3P-3, SC-65-3

SSM6K411TU(TE85L,F

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 10A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: UF6
• Package / Case: 6-SMD, Flat Leads

Paquete: 6-SMD, Flat Leads

TK31N60W,S1VF

Toshiba Semiconductor and Storage

MOSFET N CH 600V 30.8A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
• Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V
• Vgs (Max): ±30V
• FET Feature: Super Junction
• Power Dissipation (Max): 230W (Tc)
• Rds On (Max) @ Id, Vgs: 88 mOhm @ 15.4A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

Paquete: TO-247-3

TK40E10N1,S1X

Toshiba Semiconductor and Storage

MOSFET N CH 100V 90A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 126W (Tc)
• Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 20A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

Paquete: TO-220-3

SSM3K324R,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 4A SOT-23F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 30V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 55 mOhm @ 4A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23F
• Package / Case: SOT-23-3 Flat Leads

Paquete: SOT-23-3 Flat Leads

2SC2235-Y,T6ASHF(J

Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 120V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
• Power - Max: 900mW
• Frequency - Transition: 120MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

2SA1428-Y,T2F(M

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V SC71

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
• Power - Max: 900mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: SC-71
• Supplier Device Package: MSTM

Paquete: SC-71

RN1964TE85LF

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

Paquete: 6-TSSOP, SC-88, SOT-363

TA8428K(O,S)

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 7HSIP

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (2)
• Interface: Parallel
• Technology: Bipolar
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 1.5A
• Voltage - Supply: 7 V ~ 27 V
• Voltage - Load: 7 V ~ 27 V
• Operating Temperature: -30°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 7-SIP, Exposed Tab
• Supplier Device Package: 7-HSIP

Paquete: 7-SIP, Exposed Tab

TC4001BFTEL

Toshiba Semiconductor and Storage

IC GATE NOR 4CH 2-INP 14TSSOP

• Logic Type: NOR Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 3 V ~ 18 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 3.4mA, 3.4mA
• Logic Level - Low: 1.5 V ~ 4 V
• Logic Level - High: 3.5 V ~ 11 V
• Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SOP
• Package / Case: 14-SOIC (0.209", 5.30mm Width)

Paquete: 14-SOIC (0.209", 5.30mm Width)

TC75S56FE,LM

Toshiba Semiconductor and Storage

IC COMP GP CMOS ESV

• Type: General Purpose
• Number of Elements: 1
• Output Type: Push-Pull
• Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
• Voltage - Input Offset (Max): 7mV @ 5V
• Current - Input Bias (Max): 1pA
• Current - Output (Typ): 18mA @ 5V
• Current - Quiescent (Max): 22µA
• CMRR, PSRR (Typ): -
• Propagation Delay (Max): 680ns
• Hysteresis: -
• Operating Temperature: -40°C ~ 85°C
• Package / Case: SOT-553
• Mounting Type: Surface Mount
• Supplier Device Package: ESV

Paquete: SOT-553

DF10G5M4N,LF

Toshiba Semiconductor and Storage

TVS DIODE 3.6VWM 24VC 10DFN

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 4
• Voltage - Reverse Standoff (Typ): 3.6V (Max)
• Voltage - Breakdown (Min): 4V
• Voltage - Clamping (Max) @ Ipp: 24V
• Current - Peak Pulse (10/1000µs): 2A (8/20µs)
• Power - Peak Pulse: 30W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 0.2pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 10-UFDFN
• Supplier Device Package: 10-DFN (2.5x1)

Paquete: 10-UFDFN

TLP290(Y-TP,SE

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 50% @ 5mA
• Current Transfer Ratio (Max): 150% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: AC, DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 4-SOIC (0.179", 4.55mm)
• Supplier Device Package: 4-SO

Paquete: 4-SOIC (0.179", 4.55mm)

TLP2601(TP1,F)

Toshiba Semiconductor and Storage

OPTOISO 2.5KV OPN COLLECTOR 8SMD

• Number of Channels: 1
• Inputs - Side 1/Side 2: 1/0
• Voltage - Isolation: 2500Vrms
• Common Mode Transient Immunity (Min): 1kV/µs
• Input Type: DC
• Output Type: Open Collector, Schottky Clamped
• Current - Output / Channel: 25mA
• Data Rate: 10MBd
• Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
• Rise / Fall Time (Typ): 30ns, 30ns
• Voltage - Forward (Vf) (Typ): 1.65V
• Current - DC Forward (If) (Max): 20mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Gull Wing
• Supplier Device Package: 8-SMD

Paquete: 8-SMD, Gull Wing

TLP718(F)

Toshiba Semiconductor and Storage

OPTOISO 5KV PUSH PULL 6DIP GW

• Number of Channels: 1
• Inputs - Side 1/Side 2: 1/0
• Voltage - Isolation: 5000Vrms
• Common Mode Transient Immunity (Min): 10kV/µs
• Input Type: DC
• Output Type: Push-Pull, Totem Pole
• Current - Output / Channel: 25mA
• Data Rate: 5Mbps
• Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
• Rise / Fall Time (Typ): 30ns, 30ns
• Voltage - Forward (Vf) (Typ): 1.6V
• Current - DC Forward (If) (Max): 20mA
• Voltage - Supply: 4.5 V ~ 20 V
• Operating Temperature: -40°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.268", 6.80mm Width)
• Supplier Device Package: 6-SDIP Gull Wing

Paquete: 6-SOIC (0.268", 6.80mm Width)

74LCX07FT

Toshiba Semiconductor and Storage

IC BUF NON-INVERT 5.5V 14TSSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 6
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Open Drain
• Current - Output High, Low: -, 32mA
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 14-TSSOP

Paquete: 14-TSSOP (0.173", 4.40mm Width)

74VHC21FT

Toshiba Semiconductor and Storage

X34 PB-F AND GATE VCC: 2-5.5V

• Logic Type: AND Gate
• Number of Circuits: 2
• Number of Inputs: 4
• Features: -
• Voltage - Supply: 2V ~ 5.5V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.1V ~ 36V
• Logic Level - High: 2V ~ 4.5V
• Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-TSSOPB
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)

Paquete: 14-TSSOP (0.173", 4.40mm Width)

TAR5S35U(TE85L,F)

Toshiba Semiconductor and Storage

200MA LDO VOUT3.5V DROPOUT130V I

• Output Configuration: -
• Output Type: -
• Number of Regulators: -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: -
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

TC7SH09F-LF

Toshiba Semiconductor and Storage

IC GATE AND 1CH 2-INP SMV

• Logic Type: AND Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: Open Drain
• Voltage - Supply: 2V ~ 5.5V
• Current - Quiescent (Max): 2 µA
• Current - Output High, Low: -, 8mA
• Logic Level - Low: 0.5V ~ 1.65V
• Logic Level - High: 1.5V ~ 3.85V
• Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: SMV
• Package / Case: SC-74A, SOT-753

Paquete: -

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TCA62724FMG-EL

Toshiba Semiconductor and Storage

IC LED DRVR LIN DIM 150MA 10SON

• Type: Linear
• Topology: -
• Internal Switch(s): Yes
• Number of Outputs: 3
• Voltage - Supply (Min): 2.8V
• Voltage - Supply (Max): 5.5V
• Voltage - Output: -
• Current - Output / Channel: 150mA
• Frequency: -
• Dimming: PWM
• Applications: Backlight
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 10-SMD, Flat Lead
• Supplier Device Package: 10-SON (3x3)

Paquete: -

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TCR3DM35-LF-SE

Toshiba Semiconductor and Storage

LDO REG IOUT: 300MA VIN: 6V VOUT

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.23V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-UDFN Exposed Pad
• Supplier Device Package: 4-DFN (1x1)

Paquete: -

TK155E65Z-S1X

Toshiba Semiconductor and Storage

650V DTMOS VI TO-220 155MOHM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 730µA
• Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

Paquete: -

TPH1R405PL-L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 45V 120A 8SOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 45 V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 960mW (Ta), 132W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

Paquete: -

SSM6K516NU-LF

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 6A 6UDFNB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
• Vgs (Max): +20V, -12V
• FET Feature: -
• Power Dissipation (Max): 1.25W (Ta)
• Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: 6-UDFNB (2x2)
• Package / Case: 6-WDFN Exposed Pad

Paquete: -

TCR3DG285-LF

Toshiba Semiconductor and Storage

PB-F CMOS POINT DDRULATOR (SINGL

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.85V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.235V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFBGA, CSPBGA
• Supplier Device Package: 4-WCSPE (0.65x0.65)

Paquete: -

TJ60S04M3L-LXHQ

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 60A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
• Vgs (Max): +10V, -20V
• FET Feature: -
• Power Dissipation (Max): 90W (Tc)
• Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK+
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paquete: -

1SS321-LF

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 10V 50MA S-MINI

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 10 V
• Current - Average Rectified (Io): 50mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 nA @ 10 V
• Capacitance @ Vr, F: 3.2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini
• Operating Temperature - Junction: 125°C (Max)

Paquete: -