Página 23 - IXYS Productos | Heisener Electronics
Contáctenos
SalesDept@heisener.com +86-755-83210559-836
Iniciar sesión/Registrar
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carro 0

IXYS Productos

Registros 5.468
Página  23/196
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
IXGK28N140B3H1
IXYS

IGBT 1400V 60A 300W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1400V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 28A
  • Power - Max: 300W
  • Switching Energy: 3.6mJ (on), 3.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 88nC
  • Td (on/off) @ 25°C: 16ns/190ns
  • Test Condition: 960V, 28A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 350ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
Paquete: TO-264-3, TO-264AA
En existencias2.032
IXFT14N100
IXYS

MOSFET N-CH 1000V 14A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Paquete: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
En existencias4.336
hot IXFX32N50
IXYS

MOSFET N-CH 500V 32A PLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5450pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias118.140
IXKP24N60C5
IXYS

MOSFET N-CH 600V 24A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 790µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias3.760
hot IXTQ96N25T
IXYS

MOSFET N-CH 250V 96A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 625W (Tc)
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
Paquete: TO-3P-3, SC-65-3
En existencias390.000
IXFH102N15T
IXYS

MOSFET N-CH 150V 102A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 455W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias4.592
IXFA20N50P3
IXYS

MOSFET N-CH 500V 20A TO-263AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 380W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXFA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias2.320
IXTA48P05T
IXYS

MOSFET P-CH 50V 48A TO-263

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 24A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias5.520
IXFX180N25T
IXYS

MOSFET N-CH 250V 180A PLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 345nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1390W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias7.120
CLA40MT1200NPZ
IXYS

THYRISTOR PHASE THRU TO263

  • Triac Type: Standard
  • Voltage - Off State: 1200V (1.2kV)
  • Current - On State (It (RMS)) (Max): 44A
  • Voltage - Gate Trigger (Vgt) (Max): 1.3V
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 215A
  • Current - Gate Trigger (Igt) (Max): 40mA
  • Current - Hold (Ih) (Max): 50mA
  • Configuration: Single
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak-HV)
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias7.584
MCC56-08IO8B
IXYS

MOD THYRISTOR DUAL 800V TO-240AA

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 800V
  • Current - On State (It (AV)) (Max): 64A
  • Current - On State (It (RMS)) (Max): 100A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-240AA
Paquete: TO-240AA
En existencias2.800
MCC56-16IO1B
IXYS

MOD THYRISTOR DUAL 1600V TO240AA

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 1600V
  • Current - On State (It (AV)) (Max): 64A
  • Current - On State (It (RMS)) (Max): 100A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-240AA
Paquete: TO-240AA
En existencias5.152
hot MCC312-16IO1
IXYS

SCR DUAL 1600V 520A Y1-CU

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 1600V
  • Current - On State (It (AV)) (Max): 320A
  • Current - On State (It (RMS)) (Max): 520A
  • Voltage - Gate Trigger (Vgt) (Max): 2V
  • Current - Gate Trigger (Igt) (Max): 150mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 10100A
  • Current - Hold (Ih) (Max): 150mA
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Y1-CU
Paquete: Y1-CU
En existencias5.392
DSS16-01AS-TUB
IXYS

DIODE SCHOTTKY 100V 16A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 790mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias6.192
DGSK40-018A
IXYS

DIODE ARRAY SCHOTTKY 180V TO220

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 180V
  • Current - Average Rectified (Io) (per Diode): 23A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 7.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 180V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
Paquete: TO-220-3
En existencias7.024
DSEE29-12CC
IXYS

DIODE ARRAY 600V 30A ISOPLUS220

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.62V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 500µA @ 600V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS220?
  • Supplier Device Package: ISOPLUS220?
Paquete: ISOPLUS220?
En existencias3.808
hot DSSK50-01A
IXYS

DIODE ARRAY SCHOTTKY 100V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 25A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 25A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 100V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-247AD
Paquete: TO-3P-3 Full Pack
En existencias6.640
hot IXDF504PI
IXYS

IC GATE DRIVER 4A 8-DIP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 30 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 9ns, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
Paquete: 8-DIP (0.300", 7.62mm)
En existencias25.440
DVRFD630-375/475
IXYS

IXRFD630 DE-375/DE-475 DEV BOARD

  • Type: MOSFET Driver
  • Frequency: -
  • For Use With/Related Products: IXRFD630
  • Supplied Contents: Board
Paquete: -
En existencias4.752
N1802NC160
IXYS

SCR 1.6KV 3592A W11

  • Voltage - Off State: 1.6 kV
  • Voltage - Gate Trigger (Vgt) (Max): 3 V
  • Current - Gate Trigger (Igt) (Max): 300 mA
  • Voltage - On State (Vtm) (Max): 1.29 V
  • Current - On State (It (AV)) (Max): 1802 A
  • Current - On State (It (RMS)) (Max): 3592 A
  • Current - Hold (Ih) (Max): 1 A
  • Current - Off State (Max): 100 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 32500A @ 50Hz
  • SCR Type: Standard Recovery
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Clamp On
  • Package / Case: TO-200AC, K-PUK
  • Supplier Device Package: W11
Paquete: -
Request a Quote
QJ8035NH4TP
IXYS

TRIAC ALTERNISTOR 800V 35A TO263

  • Triac Type: Alternistor - Snubberless
  • Voltage - Off State: 800 V
  • Current - On State (It (RMS)) (Max): 35 A
  • Voltage - Gate Trigger (Vgt) (Max): 1 V
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
  • Current - Gate Trigger (Igt) (Max): 35 mA
  • Current - Hold (Ih) (Max): 60 mA
  • Configuration: Single
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
Paquete: -
En existencias3.000
R0633YC12E
IXYS

SCR 1.2KV 1268A W58

  • Voltage - Off State: 1.2 kV
  • Voltage - Gate Trigger (Vgt) (Max): 3 V
  • Current - Gate Trigger (Igt) (Max): 200 mA
  • Voltage - On State (Vtm) (Max): 1.85 V
  • Current - On State (It (AV)) (Max): 633 A
  • Current - On State (It (RMS)) (Max): 1268 A
  • Current - Hold (Ih) (Max): 1 A
  • Current - Off State (Max): 60 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 6900A @ 50Hz
  • SCR Type: Standard Recovery
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: TO-200AB, B-PuK
  • Supplier Device Package: W58
Paquete: -
Request a Quote
IXTA3N150HV-TRL
IXYS

MOSFET N-CH 1500V 3A TO263HV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1500 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263HV
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Paquete: -
Request a Quote
MCNA75P2200TA
IXYS

BIPOLAR MODULE - THYRISTOR TO-2

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 2.2 kV
  • Current - On State (It (AV)) (Max): 75 A
  • Current - On State (It (RMS)) (Max): 118 A
  • Voltage - Gate Trigger (Vgt) (Max): 1.4 V
  • Current - Gate Trigger (Igt) (Max): 95 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A, 1510A
  • Current - Hold (Ih) (Max): 200 mA
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-240AA
Paquete: -
Request a Quote
IXTA64N10L2-TRL
IXYS

MOSFET N-CH 100V 64A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 357W (Tc)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 32A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Paquete: -
Request a Quote
IXTA32P20T-TRL
IXYS

MOSFET P-CH 200V 32A TO263

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Paquete: -
Request a Quote
IXYH40N120C4
IXYS

IGBT DISCRETE TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 120 A
  • Current - Collector Pulsed (Icm): 230 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
  • Power - Max: 680 W
  • Switching Energy: 5.55mJ (on), 1.55mJ (off)
  • Input Type: Standard
  • Gate Charge: 92 nC
  • Td (on/off) @ 25°C: 21ns/140ns
  • Test Condition: 960V, 32A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 55 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
Paquete: -
Request a Quote
DSEP6-06AS-TUB
IXYS

DIODE GEN PURP 600V 6A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 2.03 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: 5pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: -
Request a Quote