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IXYS |
IGBT 600V 40A 150W TO247AD
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 40A
- Current - Collector Pulsed (Icm): 80A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
- Power - Max: 150W
- Switching Energy: 1.5mJ (off)
- Input Type: Standard
- Gate Charge: 100nC
- Td (on/off) @ 25°C: 100ns/600ns
- Test Condition: 480V, 20A, 82 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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Paquete: TO-247-3 |
En existencias5.216 |
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IXYS |
IGBT 600V 75A 500W TO268
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 300A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
- Power - Max: 500W
- Switching Energy: 1mJ (off)
- Input Type: Standard
- Gate Charge: 170nC
- Td (on/off) @ 25°C: 28ns/160ns
- Test Condition: 400V, 50A, 3.3 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
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Paquete: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
En existencias2.432 |
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IXYS |
IGBT 600V 60A 220W TO220AB
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 60A
- Current - Collector Pulsed (Icm): 150A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
- Power - Max: 220W
- Switching Energy: 270µJ (on), 90µJ (off)
- Input Type: Standard
- Gate Charge: 38nC
- Td (on/off) @ 25°C: 16ns/42ns
- Test Condition: 300V, 20A, 5 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Paquete: TO-220-3 |
En existencias3.776 |
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IXYS |
IGBT 650V 50A 230W TO247AD
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 50A
- Current - Collector Pulsed (Icm): 105A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
- Power - Max: 230W
- Switching Energy: 430µJ (on), 350µJ (off)
- Input Type: Standard
- Gate Charge: 30nC
- Td (on/off) @ 25°C: 19ns/80ns
- Test Condition: 400V, 20A, 20 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXYH)
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Paquete: TO-247-3 |
En existencias6.208 |
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IXYS |
MODULE IGBT CBI E2
- IGBT Type: NPT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 50A
- Power - Max: 225W
- Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 35A
- Current - Collector Cutoff (Max): 1.1mA
- Input Capacitance (Cies) @ Vce: 1.65nF @ 25V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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Paquete: E2 |
En existencias7.600 |
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IXYS |
MOSFET N-CH 200V 60A ISOPLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 33 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
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Paquete: ISOPLUS220? |
En existencias5.408 |
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IXYS |
MOSFET N-CH 200V 74A PLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 37A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS220
- Package / Case: TO-220-3, Short Tab
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Paquete: TO-220-3, Short Tab |
En existencias3.552 |
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IXYS |
MOSFET N-CH 500V 19A ISOPLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
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Paquete: ISOPLUS220? |
En existencias7.168 |
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IXYS |
MOSFET N-CH PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 960W (Tc)
- Rds On (Max) @ Id, Vgs: 230 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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Paquete: TO-247-3 |
En existencias3.040 |
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IXYS |
MOSFET P-CH 150V 22A ISOPLUS247
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: ISOPLUS247?
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Paquete: ISOPLUS247? |
En existencias4.976 |
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IXYS |
DIODE GEN PURP 2.2KV 30A TO263
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40µA @ 2200V
- Capacitance @ Vr, F: 7pF @ 700V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2Pak)
- Operating Temperature - Junction: -55°C ~ 175°C
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Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias5.664 |
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IXYS |
DIODE MODULE 20KV 4.7A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 20000V
- Current - Average Rectified (Io) (per Diode): 4.7A
- Voltage - Forward (Vf) (Max) @ If: 23V @ 12A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 20000V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Paquete: Module |
En existencias3.856 |
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IXYS |
DIODE ARRAY GP 200V 15A TO247AD
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io) (per Diode): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 1µA @ 200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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Paquete: TO-247-3 |
En existencias4.080 |
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IXYS |
DIODE ARRAY GP 400V 10A TO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.32V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45ns
- Current - Reverse Leakage @ Vr: 1µA @ 400V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Paquete: TO-220-3 |
En existencias4.320 |
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IXYS |
DIODE ARRAY SCHOTTKY 100V TO220
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io) (per Diode): 15A
- Voltage - Forward (Vf) (Max) @ If: 910mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300µA @ 100V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Paquete: TO-220-3 |
En existencias2.688 |
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IXYS |
RECT BRIDGE 3PH 140A 1400V PWS-C
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1400V
- Current - Average Rectified (Io): 140A
- Voltage - Forward (Vf) (Max) @ If: 1.09V @ 40A
- Current - Reverse Leakage @ Vr: 100µA @ 1400V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-C
- Supplier Device Package: PWS-C
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Paquete: PWS-C |
En existencias6.576 |
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IXYS |
RECT BRIDGE 3PH 25A 1400V FO-B
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1400V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 2.2V @ 150A
- Current - Reverse Leakage @ Vr: 300µA @ 1400V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: QC Terminal
- Package / Case: 5-Square, FO-B
- Supplier Device Package: PWS-E1
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Paquete: 5-Square, FO-B |
En existencias5.584 |
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IXYS |
IC MOSFET DRVR LS 4A DUAL 16SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 35 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 16ns, 13ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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Paquete: 16-SOIC (0.295", 7.50mm Width) |
En existencias4.832 |
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IXYS |
IXZ631DF12N100 1000V 12A INTEGRA
- Driven Configuration: High-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 3.5V
- Current - Peak Output (Source, Sink): 72A, 72A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 1000V
- Rise / Fall Time (Typ): 2.4ns, 1.55ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-SMD, Flat Lead
- Supplier Device Package: 10-SMD
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Paquete: 10-SMD, Flat Lead |
En existencias5.696 |
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IXYS |
IGBT 1200V 9A 45W TO252AA
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 9 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
- Power - Max: 45 W
- Switching Energy: 400µJ (on), 300µJ (off)
- Input Type: Standard
- Gate Charge: 12 nC
- Td (on/off) @ 25°C: -
- Test Condition: 600V, 3A, 330Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
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Paquete: - |
Request a Quote |
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IXYS |
DIODE GEN PURP 1.2KV 90A TO268AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 90A
- Voltage - Forward (Vf) (Max) @ If: 2.69 V @ 90 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 85 ns
- Current - Reverse Leakage @ Vr: 1 mA @ 1200 V
- Capacitance @ Vr, F: 48pF @ 600V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA (D3Pak-HV)
- Operating Temperature - Junction: -55°C ~ 175°C
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Paquete: - |
En existencias90 |
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IXYS |
MOSFET N-CH 1000V 56A SOT227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 9150 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1200W (Tc)
- Rds On (Max) @ Id, Vgs: 89mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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Paquete: - |
En existencias117 |
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IXYS |
MOSFET 200V 94A N-CH ULTRA TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Paquete: - |
En existencias921 |
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IXYS |
SCR 1.8KV 5200A W70
- Voltage - Off State: 1.8 kV
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 300 mA
- Voltage - On State (Vtm) (Max): 2 V
- Current - On State (It (AV)) (Max): 2600 A
- Current - On State (It (RMS)) (Max): 5200 A
- Current - Hold (Ih) (Max): 1 A
- Current - Off State (Max): 100 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 33000A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Clamp On
- Package / Case: TO-200AC, K-PUK
- Supplier Device Package: W70
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Paquete: - |
Request a Quote |
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IXYS |
IGBT MOD 1200V 155A MINIPACK2
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 155 A
- Power - Max: 500 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
- Current - Collector Cutoff (Max): 300 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: MiniPack2
- Supplier Device Package: MiniPack2
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Paquete: - |
Request a Quote |
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IXYS |
SCR 1.8KV W11
- Voltage - Off State: 1.8 kV
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Voltage - On State (Vtm) (Max): -
- Current - On State (It (AV)) (Max): 1800 A
- Current - On State (It (RMS)) (Max): -
- Current - Hold (Ih) (Max): -
- Current - Off State (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1448A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -
- Mounting Type: Clamp On
- Package / Case: TO-200AC, K-PUK
- Supplier Device Package: W11
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Paquete: - |
Request a Quote |
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IXYS |
IGBT 3000V 80A TO268HV
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 3000 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 280 A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
- Power - Max: 400 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 142 nC
- Td (on/off) @ 25°C: 50ns/160ns
- Test Condition: 1250V, 32A, 2Ohm, 15V
- Reverse Recovery Time (trr): 1500 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268HV (IXBT)
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Paquete: - |
Request a Quote |
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IXYS |
DIODE GEN PURP 1.2KV 45A TO268AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 45A
- Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
- Capacitance @ Vr, F: 18pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA (D3Pak-HV)
- Operating Temperature - Junction: -40°C ~ 175°C
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Paquete: - |
Request a Quote |
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