Página 9 - Infineon Technologies Productos - Transistores - IGBT - Simple

IKWH50N65EH7XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 200 A
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A
Power - Max: 249 W
Switching Energy: 1.27mJ (on), 650µJ (off)
Input Type: Standard
Gate Charge: 102 nC
Td (on/off) @ 25°C: 19ns/147ns
Test Condition: 400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr): 76 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-32

Paquete: -

En existencias585

650 V

80 A

200 A

1.65V @ 15V, 50A

249 W

1.27mJ (on), 650µJ (off)

Standard

102 nC

19ns/147ns

400V, 50A, 10Ohm, 15V

76 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-32

IKW25N120CS7XKSA1

Infineon Technologies

IGBT TRENCH FS 1200V 55A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 55 A
Current - Collector Pulsed (Icm): 75 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Power - Max: 250 W
Switching Energy: 1.2mJ (on), 1.1mJ (off)
Input Type: Standard
Gate Charge: 150 nC
Td (on/off) @ 25°C: 21ns/160ns
Test Condition: 600V, 25A, 6Ohm, 15V
Reverse Recovery Time (trr): 150 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

Paquete: -

En existencias141

1200 V

55 A

75 A

2V @ 15V, 25A

250 W

1.2mJ (on), 1.1mJ (off)

Standard

150 nC

21ns/160ns

600V, 25A, 6Ohm, 15V

150 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

AIKQ120N75CP2XKSA1

Infineon Technologies

IGBT 750V 150A TO247-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector (Ic) (Max): 150 A
Current - Collector Pulsed (Icm): 360 A
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 120A
Power - Max: 682 W
Switching Energy: 6.82mJ (on), 3.8mJ (off)
Input Type: Standard
Gate Charge: 731 nC
Td (on/off) @ 25°C: 71ns/244ns
Test Condition: 470V, 120A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-46

Paquete: -

En existencias522

750 V

150 A

360 A

1.5V @ 15V, 120A

682 W

6.82mJ (on), 3.8mJ (off)

Standard

731 nC

71ns/244ns

470V, 120A, 5Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-46

IHW30N65R6XKSA1

Infineon Technologies

IGBT 650V 65A TO247-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 65 A
Current - Collector Pulsed (Icm): 90 A
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A
Power - Max: 163 W
Switching Energy: 730µJ (on), 260µJ (off)
Input Type: Standard
Gate Charge: 120 nC
Td (on/off) @ 25°C: 13ns/161ns
Test Condition: 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): 90 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

Paquete: -

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650 V

65 A

90 A

1.6V @ 15V, 30A

163 W

730µJ (on), 260µJ (off)

Standard

120 nC

13ns/161ns

400V, 30A, 10Ohm, 15V

90 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

IKFW40N60DH3EXKSA1

Infineon Technologies

IGBT TRENCH FS 600V 34A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 34 A
Current - Collector Pulsed (Icm): 90 A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Power - Max: 111 W
Switching Energy: 870µJ (on), 360µJ (off)
Input Type: Standard
Gate Charge: 107 nC
Td (on/off) @ 25°C: 18ns/144ns
Test Condition: 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): 72 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-AI

Paquete: -

En existencias660

600 V

34 A

90 A

2.7V @ 15V, 30A

111 W

870µJ (on), 360µJ (off)

Standard

107 nC

18ns/144ns

400V, 30A, 10Ohm, 15V

72 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-AI

SIGC14T60NCX7SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 15A, 18Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paquete: -

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600 V

15 A

45 A

2.5V @ 15V, 15A

-

Standard

-

21ns/110ns

300V, 15A, 18Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC14T60NCX7SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 15A, 18Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paquete: -

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600 V

15 A

45 A

2.5V @ 15V, 15A

-

Standard

-

21ns/110ns

300V, 15A, 18Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

63-9019

Infineon Technologies

IGBT CHIP

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paquete: -

Request a Quote

-

63-9015

Infineon Technologies

IGBT CHIP

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paquete: -

Request a Quote

-

IGW75N60H3FKSA1

Infineon Technologies

IGBT TRENCH FS 600V 140A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 140 A
Current - Collector Pulsed (Icm): 225 A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Power - Max: 428 W
Switching Energy: 3mJ (on), 1.7mJ (off)
Input Type: Standard
Gate Charge: 470 nC
Td (on/off) @ 25°C: 31ns/265ns
Test Condition: 400V, 75A, 5.2Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

Paquete: -

En existencias678

600 V

140 A

225 A

2.3V @ 15V, 75A

428 W

3mJ (on), 1.7mJ (off)

Standard

470 nC

31ns/265ns

400V, 75A, 5.2Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

IRGC4066EFX7SA1

Infineon Technologies

IGBT 600V 140A DIE

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 140 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paquete: -

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600 V

140 A

-

Standard

-

Surface Mount

Die

IKQ50N120CH7XKSA1

Infineon Technologies

IGBT TRENCH FS 1200V 71A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 71 A
Current - Collector Pulsed (Icm): 200 A
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Power - Max: 398 W
Switching Energy: 2.61mJ (on), 1.1mJ (off)
Input Type: Standard
Gate Charge: 366 nC
Td (on/off) @ 25°C: 40ns/323ns
Test Condition: -
Reverse Recovery Time (trr): 133 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-U01

Paquete: -

En existencias651

1200 V

71 A

200 A

2.15V @ 15V, 50A

398 W

2.61mJ (on), 1.1mJ (off)

Standard

366 nC

40ns/323ns

-

133 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-U01

AIGB15N65F5ATMA1

Infineon Technologies

DISCRETE SWITCHES

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2

Paquete: -

En existencias6.000

650 V

15 A

-

Standard

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

PG-TO263-3-2

SIGC18T60UNX1SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 15ns/65ns
Test Condition: 400V, 20A, 2.2Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paquete: -

Request a Quote

600 V

20 A

60 A

3.15V @ 15V, 20A

-

Standard

-

15ns/65ns

400V, 20A, 2.2Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC18T60UNX1SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 15ns/65ns
Test Condition: 400V, 20A, 2.2Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paquete: -

Request a Quote

600 V

20 A

60 A

3.15V @ 15V, 20A

-

Standard

-

15ns/65ns

400V, 20A, 2.2Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

IKY120N65EH7XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 160A TO247-4

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 160 A
Current - Collector Pulsed (Icm): 480 A
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A
Power - Max: 498 W
Switching Energy: 1.7mJ (on), 1.5mJ (off)
Input Type: Standard
Gate Charge: 244 nC
Td (on/off) @ 25°C: 25ns/175ns
Test Condition: 400V, 120A, 10Ohm, 15V
Reverse Recovery Time (trr): 64 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: PG-TO247-4-2

Paquete: -

En existencias690

650 V

160 A

480 A

1.65V @ 15V, 120A

498 W

1.7mJ (on), 1.5mJ (off)

Standard

244 nC

25ns/175ns

400V, 120A, 10Ohm, 15V

64 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-4

PG-TO247-4-2

IRG4RC10SDTRPBFBTMA1

Infineon Technologies

IGBT 600V 14A 38W DPAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 14 A
Current - Collector Pulsed (Icm): 18 A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Power - Max: 38 W
Switching Energy: 310µJ (on), 3.28mJ (off)
Input Type: Standard
Gate Charge: 15 nC
Td (on/off) @ 25°C: 76ns/815ns
Test Condition: 480V, 8A, 100Ohm, 15V
Reverse Recovery Time (trr): 28 ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA (DPAK)

Paquete: -

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600 V

14 A

18 A

1.8V @ 15V, 8A

38 W

310µJ (on), 3.28mJ (off)

Standard

15 nC

76ns/815ns

480V, 8A, 100Ohm, 15V

28 ns

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252AA (DPAK)

AUXKNG4PH50S-215

Infineon Technologies

IGBT 1200V TO247-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paquete: -

Request a Quote

-

SIGC39T60EX1SA3

Infineon Technologies

IGBT TRENCH FS 600V 75A DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Current - Collector Pulsed (Icm): 225 A
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paquete: -

Request a Quote

600 V

75 A

225 A

1.85V @ 15V, 75A

-

Standard

-

-40°C ~ 175°C (TJ)

Surface Mount

Die

SIGC18T60SNCX7SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 36ns/250ns
Test Condition: 400V, 20A, 16Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paquete: -

Request a Quote

600 V

20 A

60 A

2.5V @ 15V, 20A

-

Standard

-

36ns/250ns

400V, 20A, 16Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC18T60SNCX7SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 36ns/250ns
Test Condition: 400V, 20A, 16Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paquete: -

Request a Quote

600 V

20 A

60 A

2.5V @ 15V, 20A

-

Standard

-

36ns/250ns

400V, 20A, 16Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

AIKB30N65DH5ATMA1

Infineon Technologies

IGBT NPT 650V 30A TO263-3

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2

Paquete: -

En existencias3.000

650 V

30 A

-

Standard

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

PG-TO263-3-2

IKFW75N65EH5XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 80A HSIP247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 240 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Power - Max: 148 W
Switching Energy: 1.8mJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 144 nC
Td (on/off) @ 25°C: 30ns/206ns
Test Condition: 400V, 60A, 12Ohm, 15V
Reverse Recovery Time (trr): 75 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-HSIP247-3-2

Paquete: -

En existencias480

650 V

80 A

240 A

2.1V @ 15V, 60A

148 W

1.8mJ (on), 600µJ (off)

Standard

144 nC

30ns/206ns

400V, 60A, 12Ohm, 15V

75 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-HSIP247-3-2

SIGC42T60SNCX7SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 57ns/380ns
Test Condition: 400V, 50A, 6.8Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paquete: -

Request a Quote

600 V

50 A

150 A

2.5V @ 15V, 50A

-

Standard

-

57ns/380ns

400V, 50A, 6.8Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

IKW25N120T2FKSA1

Infineon Technologies

IGBT TRENCH 1200V 50A TO247-3

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 100 A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Power - Max: 349 W
Switching Energy: 2.9mJ
Input Type: Standard
Gate Charge: 120 nC
Td (on/off) @ 25°C: 27ns/265ns
Test Condition: 600V, 25A, 16.4Ohm, 15V
Reverse Recovery Time (trr): 195 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-1

Paquete: -

En existencias360

1200 V

50 A

100 A

2.2V @ 15V, 25A

349 W

2.9mJ

Standard

120 nC

27ns/265ns

600V, 25A, 16.4Ohm, 15V

195 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-1

IRG4BC40UPBF-INF

Infineon Technologies

ULTRAFAST SPEED IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paquete: -

Request a Quote

-

IHW25N120R2FKSA1

Infineon Technologies

IGBT 1200V 50A 365W TO247-3

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 75 A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 25A
Power - Max: 365 W
Switching Energy: 1.59mJ
Input Type: Standard
Gate Charge: 60.7 nC
Td (on/off) @ 25°C: -/324ns
Test Condition: 600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-1

Paquete: -

Request a Quote

1200 V

50 A

75 A

1.8V @ 15V, 25A

365 W

1.59mJ

Standard

60.7 nC

-/324ns

600V, 25A, 10Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-1

IKWH60N65WR6XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 100A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 100 A
Current - Collector Pulsed (Icm): 180 A
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
Power - Max: 240 W
Switching Energy: 1.82mJ (on), 850µJ (off)
Input Type: Standard
Gate Charge: 174 nC
Td (on/off) @ 25°C: 35ns/311ns
Test Condition: 400V, 60A, 15Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-32

Paquete: -

En existencias1.314

650 V

100 A

180 A

1.85V @ 15V, 60A

240 W

1.82mJ (on), 850µJ (off)

Standard

174 nC

35ns/311ns

400V, 60A, 15Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-32

Nº de pieza	Fabricantes	Descripción	Paquete	En existencias	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IKWH50N65EH7XKSA1	Infineon Technologies	IGBT TRENCH FS 650V 80A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 200 A Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A Power - Max: 249 W Switching Energy: 1.27mJ (on), 650µJ (off) Input Type: Standard Gate Charge: 102 nC Td (on/off) @ 25°C: 19ns/147ns Test Condition: 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): 76 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-32	Paquete: -	En existencias585	650 V	80 A	200 A	1.65V @ 15V, 50A	249 W	1.27mJ (on), 650µJ (off)	Standard	102 nC	19ns/147ns	400V, 50A, 10Ohm, 15V	76 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-32
IKW25N120CS7XKSA1	Infineon Technologies	IGBT TRENCH FS 1200V 55A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 55 A Current - Collector Pulsed (Icm): 75 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Power - Max: 250 W Switching Energy: 1.2mJ (on), 1.1mJ (off) Input Type: Standard Gate Charge: 150 nC Td (on/off) @ 25°C: 21ns/160ns Test Condition: 600V, 25A, 6Ohm, 15V Reverse Recovery Time (trr): 150 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	Paquete: -	En existencias141	1200 V	55 A	75 A	2V @ 15V, 25A	250 W	1.2mJ (on), 1.1mJ (off)	Standard	150 nC	21ns/160ns	600V, 25A, 6Ohm, 15V	150 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
AIKQ120N75CP2XKSA1	Infineon Technologies	IGBT 750V 150A TO247-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 750 V Current - Collector (Ic) (Max): 150 A Current - Collector Pulsed (Icm): 360 A Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 120A Power - Max: 682 W Switching Energy: 6.82mJ (on), 3.8mJ (off) Input Type: Standard Gate Charge: 731 nC Td (on/off) @ 25°C: 71ns/244ns Test Condition: 470V, 120A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-46	Paquete: -	En existencias522	750 V	150 A	360 A	1.5V @ 15V, 120A	682 W	6.82mJ (on), 3.8mJ (off)	Standard	731 nC	71ns/244ns	470V, 120A, 5Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-46
IHW30N65R6XKSA1	Infineon Technologies	IGBT 650V 65A TO247-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 65 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A Power - Max: 163 W Switching Energy: 730µJ (on), 260µJ (off) Input Type: Standard Gate Charge: 120 nC Td (on/off) @ 25°C: 13ns/161ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 90 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	Paquete: -	Request a Quote	650 V	65 A	90 A	1.6V @ 15V, 30A	163 W	730µJ (on), 260µJ (off)	Standard	120 nC	13ns/161ns	400V, 30A, 10Ohm, 15V	90 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
IKFW40N60DH3EXKSA1	Infineon Technologies	IGBT TRENCH FS 600V 34A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 34 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Power - Max: 111 W Switching Energy: 870µJ (on), 360µJ (off) Input Type: Standard Gate Charge: 107 nC Td (on/off) @ 25°C: 18ns/144ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 72 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-AI	Paquete: -	En existencias660	600 V	34 A	90 A	2.7V @ 15V, 30A	111 W	870µJ (on), 360µJ (off)	Standard	107 nC	18ns/144ns	400V, 30A, 10Ohm, 15V	72 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-AI
SIGC14T60NCX7SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 21ns/110ns Test Condition: 300V, 15A, 18Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paquete: -	Request a Quote	600 V	15 A	45 A	2.5V @ 15V, 15A	-	-	Standard	-	21ns/110ns	300V, 15A, 18Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC14T60NCX7SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 21ns/110ns Test Condition: 300V, 15A, 18Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paquete: -	Request a Quote	600 V	15 A	45 A	2.5V @ 15V, 15A	-	-	Standard	-	21ns/110ns	300V, 15A, 18Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
63-9019	Infineon Technologies	IGBT CHIP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paquete: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
63-9015	Infineon Technologies	IGBT CHIP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paquete: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IGW75N60H3FKSA1	Infineon Technologies	IGBT TRENCH FS 600V 140A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 140 A Current - Collector Pulsed (Icm): 225 A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A Power - Max: 428 W Switching Energy: 3mJ (on), 1.7mJ (off) Input Type: Standard Gate Charge: 470 nC Td (on/off) @ 25°C: 31ns/265ns Test Condition: 400V, 75A, 5.2Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	Paquete: -	En existencias678	600 V	140 A	225 A	2.3V @ 15V, 75A	428 W	3mJ (on), 1.7mJ (off)	Standard	470 nC	31ns/265ns	400V, 75A, 5.2Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
IRGC4066EFX7SA1	Infineon Technologies	IGBT 600V 140A DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 140 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paquete: -	Request a Quote	600 V	140 A	-	-	-	-	Standard	-	-	-	-	-	Surface Mount	Die	Die
IKQ50N120CH7XKSA1	Infineon Technologies	IGBT TRENCH FS 1200V 71A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 71 A Current - Collector Pulsed (Icm): 200 A Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A Power - Max: 398 W Switching Energy: 2.61mJ (on), 1.1mJ (off) Input Type: Standard Gate Charge: 366 nC Td (on/off) @ 25°C: 40ns/323ns Test Condition: - Reverse Recovery Time (trr): 133 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-U01	Paquete: -	En existencias651	1200 V	71 A	200 A	2.15V @ 15V, 50A	398 W	2.61mJ (on), 1.1mJ (off)	Standard	366 nC	40ns/323ns	-	133 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-U01
AIGB15N65F5ATMA1	Infineon Technologies	DISCRETE SWITCHES IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2	Paquete: -	En existencias6.000	650 V	15 A	-	-	-	-	Standard	-	-	-	-	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	PG-TO263-3-2
SIGC18T60UNX1SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 20 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 15ns/65ns Test Condition: 400V, 20A, 2.2Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paquete: -	Request a Quote	600 V	20 A	60 A	3.15V @ 15V, 20A	-	-	Standard	-	15ns/65ns	400V, 20A, 2.2Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC18T60UNX1SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 20 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 15ns/65ns Test Condition: 400V, 20A, 2.2Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paquete: -	Request a Quote	600 V	20 A	60 A	3.15V @ 15V, 20A	-	-	Standard	-	15ns/65ns	400V, 20A, 2.2Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
IKY120N65EH7XKSA1	Infineon Technologies	IGBT TRENCH FS 650V 160A TO247-4 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 160 A Current - Collector Pulsed (Icm): 480 A Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A Power - Max: 498 W Switching Energy: 1.7mJ (on), 1.5mJ (off) Input Type: Standard Gate Charge: 244 nC Td (on/off) @ 25°C: 25ns/175ns Test Condition: 400V, 120A, 10Ohm, 15V Reverse Recovery Time (trr): 64 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: PG-TO247-4-2	Paquete: -	En existencias690	650 V	160 A	480 A	1.65V @ 15V, 120A	498 W	1.7mJ (on), 1.5mJ (off)	Standard	244 nC	25ns/175ns	400V, 120A, 10Ohm, 15V	64 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-4	PG-TO247-4-2
IRG4RC10SDTRPBFBTMA1	Infineon Technologies	IGBT 600V 14A 38W DPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 14 A Current - Collector Pulsed (Icm): 18 A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A Power - Max: 38 W Switching Energy: 310µJ (on), 3.28mJ (off) Input Type: Standard Gate Charge: 15 nC Td (on/off) @ 25°C: 76ns/815ns Test Condition: 480V, 8A, 100Ohm, 15V Reverse Recovery Time (trr): 28 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA (DPAK)	Paquete: -	Request a Quote	600 V	14 A	18 A	1.8V @ 15V, 8A	38 W	310µJ (on), 3.28mJ (off)	Standard	15 nC	76ns/815ns	480V, 8A, 100Ohm, 15V	28 ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252AA (DPAK)
AUXKNG4PH50S-215	Infineon Technologies	IGBT 1200V TO247-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paquete: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIGC39T60EX1SA3	Infineon Technologies	IGBT TRENCH FS 600V 75A DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 75 A Current - Collector Pulsed (Icm): 225 A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paquete: -	Request a Quote	600 V	75 A	225 A	1.85V @ 15V, 75A	-	-	Standard	-	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
SIGC18T60SNCX7SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 20 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 36ns/250ns Test Condition: 400V, 20A, 16Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paquete: -	Request a Quote	600 V	20 A	60 A	2.5V @ 15V, 20A	-	-	Standard	-	36ns/250ns	400V, 20A, 16Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC18T60SNCX7SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 20 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 36ns/250ns Test Condition: 400V, 20A, 16Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paquete: -	Request a Quote	600 V	20 A	60 A	2.5V @ 15V, 20A	-	-	Standard	-	36ns/250ns	400V, 20A, 16Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
AIKB30N65DH5ATMA1	Infineon Technologies	IGBT NPT 650V 30A TO263-3 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 30 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2	Paquete: -	En existencias3.000	650 V	30 A	-	-	-	-	Standard	-	-	-	-	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	PG-TO263-3-2
IKFW75N65EH5XKSA1	Infineon Technologies	IGBT TRENCH FS 650V 80A HSIP247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 240 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A Power - Max: 148 W Switching Energy: 1.8mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 144 nC Td (on/off) @ 25°C: 30ns/206ns Test Condition: 400V, 60A, 12Ohm, 15V Reverse Recovery Time (trr): 75 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-HSIP247-3-2	Paquete: -	En existencias480	650 V	80 A	240 A	2.1V @ 15V, 60A	148 W	1.8mJ (on), 600µJ (off)	Standard	144 nC	30ns/206ns	400V, 60A, 12Ohm, 15V	75 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-HSIP247-3-2
SIGC42T60SNCX7SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 57ns/380ns Test Condition: 400V, 50A, 6.8Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paquete: -	Request a Quote	600 V	50 A	150 A	2.5V @ 15V, 50A	-	-	Standard	-	57ns/380ns	400V, 50A, 6.8Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
IKW25N120T2FKSA1	Infineon Technologies	IGBT TRENCH 1200V 50A TO247-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 100 A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A Power - Max: 349 W Switching Energy: 2.9mJ Input Type: Standard Gate Charge: 120 nC Td (on/off) @ 25°C: 27ns/265ns Test Condition: 600V, 25A, 16.4Ohm, 15V Reverse Recovery Time (trr): 195 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-1	Paquete: -	En existencias360	1200 V	50 A	100 A	2.2V @ 15V, 25A	349 W	2.9mJ	Standard	120 nC	27ns/265ns	600V, 25A, 16.4Ohm, 15V	195 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-1
IRG4BC40UPBF-INF	Infineon Technologies	ULTRAFAST SPEED IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paquete: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IHW25N120R2FKSA1	Infineon Technologies	IGBT 1200V 50A 365W TO247-3 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 75 A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 25A Power - Max: 365 W Switching Energy: 1.59mJ Input Type: Standard Gate Charge: 60.7 nC Td (on/off) @ 25°C: -/324ns Test Condition: 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-1	Paquete: -	Request a Quote	1200 V	50 A	75 A	1.8V @ 15V, 25A	365 W	1.59mJ	Standard	60.7 nC	-/324ns	600V, 25A, 10Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-1
IKWH60N65WR6XKSA1	Infineon Technologies	IGBT TRENCH FS 650V 100A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 100 A Current - Collector Pulsed (Icm): 180 A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A Power - Max: 240 W Switching Energy: 1.82mJ (on), 850µJ (off) Input Type: Standard Gate Charge: 174 nC Td (on/off) @ 25°C: 35ns/311ns Test Condition: 400V, 60A, 15Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-32	Paquete: -	En existencias1.314	650 V	100 A	180 A	1.85V @ 15V, 60A	240 W	1.82mJ (on), 850µJ (off)	Standard	174 nC	35ns/311ns	400V, 60A, 15Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-32