Página 11 - Infineon Technologies Productos - Transistores - IGBT - Simple

AIKW50N65RF5XKSA1

Infineon Technologies

SIC_DISCRETE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Power - Max: 250 W
Switching Energy: 310µJ (on), 120µJ (off)
Input Type: Standard
Gate Charge: 109 nC
Td (on/off) @ 25°C: 20ns/156ns
Test Condition: 400V, 25A, 12Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

Paquete: -

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650 V

80 A

150 A

2.1V @ 15V, 50A

250 W

310µJ (on), 120µJ (off)

Standard

109 nC

20ns/156ns

400V, 25A, 12Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

IKA10N65ET6XKSA2

Infineon Technologies

IGBT TRENCH FS 650V 15A TO220-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): 42.5 A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 8.5A
Power - Max: 40 W
Switching Energy: 200µJ (on), 70µJ (off)
Input Type: Standard
Gate Charge: 27 nC
Td (on/off) @ 25°C: 30ns/106ns
Test Condition: 400V, 8.5A, 47Ohm, 15V
Reverse Recovery Time (trr): 51 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO220-3-FP

Paquete: -

En existencias1.500

650 V

15 A

42.5 A

1.9V @ 15V, 8.5A

40 W

200µJ (on), 70µJ (off)

Standard

27 nC

30ns/106ns

400V, 8.5A, 47Ohm, 15V

51 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-220-3 Full Pack

PG-TO220-3-FP

IHW40N60RFFKSA1

Infineon Technologies

IGBT TRENCH 600V 80A TO247-3

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Power - Max: 305 W
Switching Energy: 560µJ (off)
Input Type: Standard
Gate Charge: 220 nC
Td (on/off) @ 25°C: -/175ns
Test Condition: 400V, 40A, 5.6Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-1

Paquete: -

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600 V

80 A

120 A

2.4V @ 15V, 40A

305 W

560µJ (off)

Standard

220 nC

-/175ns

400V, 40A, 5.6Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-1

SIGC109T120R3LEX1SA2

Infineon Technologies

IGBT 1200V 100A DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 300 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paquete: -

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1200 V

-

300 A

2.1V @ 15V, 100A

-

Standard

-

Surface Mount

Die

IKQ100N120CS7XKSA1

Infineon Technologies

IGBT TRENCH FS 1200V 188A TO247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 188 A
Current - Collector Pulsed (Icm): 300 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Power - Max: 824 W
Switching Energy: 6.87mJ (on), 4.71mJ (off)
Input Type: Standard
Gate Charge: 610 nC
Td (on/off) @ 25°C: 38ns/200ns
Test Condition: -
Reverse Recovery Time (trr): 203 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-55

Paquete: -

En existencias705

1200 V

188 A

300 A

2V @ 15V, 100A

824 W

6.87mJ (on), 4.71mJ (off)

Standard

610 nC

38ns/200ns

-

203 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-55

IGC06T60TEX7SA2

Infineon Technologies

IGBT 600V 6A WAFER

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paquete: -

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-

IRG7S313UTRLPBF

Infineon Technologies

IGBT PDP 330V 40A D2PAK

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 330 V
Current - Collector (Ic) (Max): 40 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 60A
Power - Max: 78 W
Switching Energy: -
Input Type: Standard
Gate Charge: 33 nC
Td (on/off) @ 25°C: 1ns/65ns
Test Condition: 196V, 12A, 10Ohm
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

Paquete: -

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330 V

40 A

-

2.14V @ 15V, 60A

78 W

-

Standard

33 nC

1ns/65ns

196V, 12A, 10Ohm

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

D2PAK

SIGC121T60NR2CX1SA3

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 150 A
Current - Collector Pulsed (Icm): 450 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 125ns/225ns
Test Condition: 300V, 150A, 1.5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paquete: -

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600 V

150 A

450 A

2.5V @ 15V, 150A

-

Standard

-

125ns/225ns

300V, 150A, 1.5Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC121T60NR2CX1SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 150 A
Current - Collector Pulsed (Icm): 450 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 125ns/225ns
Test Condition: 300V, 150A, 1.5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paquete: -

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600 V

150 A

450 A

2.5V @ 15V, 150A

-

Standard

-

125ns/225ns

300V, 150A, 1.5Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

IRGC75B60UB

Infineon Technologies

IGBT CHIP

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 75A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paquete: -

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600 V

75 A

-

2.9V @ 15V, 75A

-

Standard

-

Surface Mount

Die

IRGC75B60KB

Infineon Technologies

IGBT CHIP

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paquete: -

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600 V

75 A

-

2.1V @ 15V, 75A

-

Standard

-

Surface Mount

Die

SIGC42T60UNX7SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 48ns/350ns
Test Condition: 400V, 50A, 6.8Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paquete: -

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600 V

50 A

150 A

3.15V @ 15V, 50A

-

Standard

-

48ns/350ns

400V, 50A, 6.8Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC42T60UNX7SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 48ns/350ns
Test Condition: 400V, 50A, 6.8Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paquete: -

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600 V

50 A

150 A

3.15V @ 15V, 50A

-

Standard

-

48ns/350ns

400V, 50A, 6.8Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

IKB20N65EH5ATMA1

Infineon Technologies

IGBT TRENCH FS 650V 38A TO263-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 38 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Power - Max: 125 W
Switching Energy: 560µJ (on), 130µJ (off)
Input Type: Standard
Gate Charge: 48 nC
Td (on/off) @ 25°C: 19ns/160ns
Test Condition: 400V, 20A, 32Ohm, 15V
Reverse Recovery Time (trr): 80 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3

Paquete: -

En existencias2.550

650 V

38 A

60 A

2.1V @ 15V, 20A

125 W

560µJ (on), 130µJ (off)

Standard

48 nC

19ns/160ns

400V, 20A, 32Ohm, 15V

80 ns

-40°C ~ 175°C (TJ)

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

PG-TO263-3

IKY50N120CH7XKSA1

Infineon Technologies

IGBT TRENCH FS 1200V 75A TO247-4

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Current - Collector Pulsed (Icm): 200 A
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Power - Max: 398 W
Switching Energy: 1.09mJ (on), 1.33mJ (off)
Input Type: Standard
Gate Charge: 372 nC
Td (on/off) @ 25°C: 35ns/331ns
Test Condition: -
Reverse Recovery Time (trr): 86 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: PG-TO247-4-U10

Paquete: -

En existencias609

1200 V

75 A

200 A

2.15V @ 15V, 50A

398 W

1.09mJ (on), 1.33mJ (off)

Standard

372 nC

35ns/331ns

-

86 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-4

PG-TO247-4-U10

IGC70T120T8RQX1SA1

Infineon Technologies

IGBT CHIP

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Current - Collector Pulsed (Icm): 225 A
Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 75A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paquete: -

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1200 V

75 A

225 A

2.42V @ 15V, 75A

-

Standard

-

-40°C ~ 175°C (TJ)

Surface Mount

Die

IKWH40N65EH7XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 160 A
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 40A
Power - Max: 208 W
Switching Energy: 0.97mJ (on), 0.42mJ (off)
Input Type: Standard
Gate Charge: 81 nC
Td (on/off) @ 25°C: 18ns/141ns
Test Condition: 400V, 40A, 12.5Ohm, 15V
Reverse Recovery Time (trr): 74 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-32

Paquete: -

En existencias627

650 V

80 A

160 A

1.65V @ 15V, 40A

208 W

0.97mJ (on), 0.42mJ (off)

Standard

81 nC

18ns/141ns

400V, 40A, 12.5Ohm, 15V

74 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-32

SIGC07T60NCX7SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6 A
Current - Collector Pulsed (Icm): 18 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 6A, 54Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paquete: -

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600 V

6 A

18 A

2.5V @ 15V, 6A

-

Standard

-

21ns/110ns

300V, 6A, 54Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC14T60NCX1SA3

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 15A, 18Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paquete: -

Request a Quote

600 V

15 A

45 A

2.5V @ 15V, 15A

-

Standard

-

21ns/110ns

300V, 15A, 18Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC14T60NCX1SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 15A, 18Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paquete: -

Request a Quote

600 V

15 A

45 A

2.5V @ 15V, 15A

-

Standard

-

21ns/110ns

300V, 15A, 18Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC14T60NCX1SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 15A, 18Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paquete: -

Request a Quote

600 V

15 A

45 A

2.5V @ 15V, 15A

-

Standard

-

21ns/110ns

300V, 15A, 18Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC14T60NCX1SA7

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 15A, 18Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paquete: -

Request a Quote

600 V

15 A

45 A

2.5V @ 15V, 15A

-

Standard

-

21ns/110ns

300V, 15A, 18Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC14T60NCX1SA6

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 15A, 18Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paquete: -

Request a Quote

600 V

15 A

45 A

2.5V @ 15V, 15A

-

Standard

-

21ns/110ns

300V, 15A, 18Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

IKWH75N65EH7XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 300 A
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
Power - Max: 341 W
Switching Energy: 2.42mJ (on), 1.4mJ (off)
Input Type: Standard
Gate Charge: 150 nC
Td (on/off) @ 25°C: 25ns/45ns
Test Condition: 400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr): 89 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-32

Paquete: -

En existencias642

650 V

80 A

300 A

1.65V @ 15V, 75A

341 W

2.42mJ (on), 1.4mJ (off)

Standard

150 nC

25ns/45ns

400V, 75A, 10Ohm, 15V

89 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-32

AIMDQ75R060M1HXUMA1

Infineon Technologies

AUTOMOTIVE_SICMOS

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paquete: -

Request a Quote

-

AIGB40N65F5ATMA1

Infineon Technologies

DISCRETE SWITCHES

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 40 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2

Paquete: -

Request a Quote

650 V

40 A

-

Standard

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

PG-TO263-3-2

SIGC84T120R3LEX1SA7

Infineon Technologies

IGBT 1200V 75A DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 225 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paquete: -

Request a Quote

1200 V

-

225 A

2.1V @ 15V, 75A

-

Standard

-

IHW30N160R2FKSA1

Infineon Technologies

IGBT 1600V 60A 312W TO247-3

IGBT Type: NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1600 V
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 90 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Power - Max: 312 W
Switching Energy: 4.37mJ
Input Type: Standard
Gate Charge: 94 nC
Td (on/off) @ 25°C: -/525ns
Test Condition: 600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-1

Paquete: -

Request a Quote

1600 V

60 A

90 A

2.1V @ 15V, 30A

312 W

4.37mJ

Standard

94 nC

-/525ns

600V, 30A, 10Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-1

Nº de pieza	Fabricantes	Descripción	Paquete	En existencias	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AIKW50N65RF5XKSA1	Infineon Technologies	SIC_DISCRETE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Power - Max: 250 W Switching Energy: 310µJ (on), 120µJ (off) Input Type: Standard Gate Charge: 109 nC Td (on/off) @ 25°C: 20ns/156ns Test Condition: 400V, 25A, 12Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	Paquete: -	Request a Quote	650 V	80 A	150 A	2.1V @ 15V, 50A	250 W	310µJ (on), 120µJ (off)	Standard	109 nC	20ns/156ns	400V, 25A, 12Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
IKA10N65ET6XKSA2	Infineon Technologies	IGBT TRENCH FS 650V 15A TO220-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 42.5 A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 8.5A Power - Max: 40 W Switching Energy: 200µJ (on), 70µJ (off) Input Type: Standard Gate Charge: 27 nC Td (on/off) @ 25°C: 30ns/106ns Test Condition: 400V, 8.5A, 47Ohm, 15V Reverse Recovery Time (trr): 51 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: PG-TO220-3-FP	Paquete: -	En existencias1.500	650 V	15 A	42.5 A	1.9V @ 15V, 8.5A	40 W	200µJ (on), 70µJ (off)	Standard	27 nC	30ns/106ns	400V, 8.5A, 47Ohm, 15V	51 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-220-3 Full Pack	PG-TO220-3-FP
IHW40N60RFFKSA1	Infineon Technologies	IGBT TRENCH 600V 80A TO247-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 305 W Switching Energy: 560µJ (off) Input Type: Standard Gate Charge: 220 nC Td (on/off) @ 25°C: -/175ns Test Condition: 400V, 40A, 5.6Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-1	Paquete: -	Request a Quote	600 V	80 A	120 A	2.4V @ 15V, 40A	305 W	560µJ (off)	Standard	220 nC	-/175ns	400V, 40A, 5.6Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-1
SIGC109T120R3LEX1SA2	Infineon Technologies	IGBT 1200V 100A DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 300 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paquete: -	Request a Quote	1200 V	-	300 A	2.1V @ 15V, 100A	-	-	Standard	-	-	-	-	-	Surface Mount	Die	Die
IKQ100N120CS7XKSA1	Infineon Technologies	IGBT TRENCH FS 1200V 188A TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 188 A Current - Collector Pulsed (Icm): 300 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A Power - Max: 824 W Switching Energy: 6.87mJ (on), 4.71mJ (off) Input Type: Standard Gate Charge: 610 nC Td (on/off) @ 25°C: 38ns/200ns Test Condition: - Reverse Recovery Time (trr): 203 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-55	Paquete: -	En existencias705	1200 V	188 A	300 A	2V @ 15V, 100A	824 W	6.87mJ (on), 4.71mJ (off)	Standard	610 nC	38ns/200ns	-	203 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-55
IGC06T60TEX7SA2	Infineon Technologies	IGBT 600V 6A WAFER IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paquete: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG7S313UTRLPBF	Infineon Technologies	IGBT PDP 330V 40A D2PAK IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 330 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 60A Power - Max: 78 W Switching Energy: - Input Type: Standard Gate Charge: 33 nC Td (on/off) @ 25°C: 1ns/65ns Test Condition: 196V, 12A, 10Ohm Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Paquete: -	Request a Quote	330 V	40 A	-	2.14V @ 15V, 60A	78 W	-	Standard	33 nC	1ns/65ns	196V, 12A, 10Ohm	-	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK
SIGC121T60NR2CX1SA3	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 150 A Current - Collector Pulsed (Icm): 450 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 125ns/225ns Test Condition: 300V, 150A, 1.5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paquete: -	Request a Quote	600 V	150 A	450 A	2.5V @ 15V, 150A	-	-	Standard	-	125ns/225ns	300V, 150A, 1.5Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC121T60NR2CX1SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 150 A Current - Collector Pulsed (Icm): 450 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 125ns/225ns Test Condition: 300V, 150A, 1.5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paquete: -	Request a Quote	600 V	150 A	450 A	2.5V @ 15V, 150A	-	-	Standard	-	125ns/225ns	300V, 150A, 1.5Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
IRGC75B60UB	Infineon Technologies	IGBT CHIP IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 75 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paquete: -	Request a Quote	600 V	75 A	-	2.9V @ 15V, 75A	-	-	Standard	-	-	-	-	-	Surface Mount	Die	Die
IRGC75B60KB	Infineon Technologies	IGBT CHIP IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 75 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paquete: -	Request a Quote	600 V	75 A	-	2.1V @ 15V, 75A	-	-	Standard	-	-	-	-	-	Surface Mount	Die	Die
SIGC42T60UNX7SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 48ns/350ns Test Condition: 400V, 50A, 6.8Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paquete: -	Request a Quote	600 V	50 A	150 A	3.15V @ 15V, 50A	-	-	Standard	-	48ns/350ns	400V, 50A, 6.8Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC42T60UNX7SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 48ns/350ns Test Condition: 400V, 50A, 6.8Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paquete: -	Request a Quote	600 V	50 A	150 A	3.15V @ 15V, 50A	-	-	Standard	-	48ns/350ns	400V, 50A, 6.8Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
IKB20N65EH5ATMA1	Infineon Technologies	IGBT TRENCH FS 650V 38A TO263-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 38 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Power - Max: 125 W Switching Energy: 560µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 48 nC Td (on/off) @ 25°C: 19ns/160ns Test Condition: 400V, 20A, 32Ohm, 15V Reverse Recovery Time (trr): 80 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3	Paquete: -	En existencias2.550	650 V	38 A	60 A	2.1V @ 15V, 20A	125 W	560µJ (on), 130µJ (off)	Standard	48 nC	19ns/160ns	400V, 20A, 32Ohm, 15V	80 ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	PG-TO263-3
IKY50N120CH7XKSA1	Infineon Technologies	IGBT TRENCH FS 1200V 75A TO247-4 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 75 A Current - Collector Pulsed (Icm): 200 A Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A Power - Max: 398 W Switching Energy: 1.09mJ (on), 1.33mJ (off) Input Type: Standard Gate Charge: 372 nC Td (on/off) @ 25°C: 35ns/331ns Test Condition: - Reverse Recovery Time (trr): 86 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: PG-TO247-4-U10	Paquete: -	En existencias609	1200 V	75 A	200 A	2.15V @ 15V, 50A	398 W	1.09mJ (on), 1.33mJ (off)	Standard	372 nC	35ns/331ns	-	86 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-4	PG-TO247-4-U10
IGC70T120T8RQX1SA1	Infineon Technologies	IGBT CHIP IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 75 A Current - Collector Pulsed (Icm): 225 A Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paquete: -	Request a Quote	1200 V	75 A	225 A	2.42V @ 15V, 75A	-	-	Standard	-	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IKWH40N65EH7XKSA1	Infineon Technologies	IGBT TRENCH FS 650V 80A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 160 A Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 40A Power - Max: 208 W Switching Energy: 0.97mJ (on), 0.42mJ (off) Input Type: Standard Gate Charge: 81 nC Td (on/off) @ 25°C: 18ns/141ns Test Condition: 400V, 40A, 12.5Ohm, 15V Reverse Recovery Time (trr): 74 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-32	Paquete: -	En existencias627	650 V	80 A	160 A	1.65V @ 15V, 40A	208 W	0.97mJ (on), 0.42mJ (off)	Standard	81 nC	18ns/141ns	400V, 40A, 12.5Ohm, 15V	74 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-32
SIGC07T60NCX7SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 6 A Current - Collector Pulsed (Icm): 18 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 21ns/110ns Test Condition: 300V, 6A, 54Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paquete: -	Request a Quote	600 V	6 A	18 A	2.5V @ 15V, 6A	-	-	Standard	-	21ns/110ns	300V, 6A, 54Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC14T60NCX1SA3	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 21ns/110ns Test Condition: 300V, 15A, 18Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paquete: -	Request a Quote	600 V	15 A	45 A	2.5V @ 15V, 15A	-	-	Standard	-	21ns/110ns	300V, 15A, 18Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC14T60NCX1SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 21ns/110ns Test Condition: 300V, 15A, 18Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paquete: -	Request a Quote	600 V	15 A	45 A	2.5V @ 15V, 15A	-	-	Standard	-	21ns/110ns	300V, 15A, 18Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC14T60NCX1SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 21ns/110ns Test Condition: 300V, 15A, 18Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paquete: -	Request a Quote	600 V	15 A	45 A	2.5V @ 15V, 15A	-	-	Standard	-	21ns/110ns	300V, 15A, 18Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC14T60NCX1SA7	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 21ns/110ns Test Condition: 300V, 15A, 18Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paquete: -	Request a Quote	600 V	15 A	45 A	2.5V @ 15V, 15A	-	-	Standard	-	21ns/110ns	300V, 15A, 18Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC14T60NCX1SA6	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 21ns/110ns Test Condition: 300V, 15A, 18Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paquete: -	Request a Quote	600 V	15 A	45 A	2.5V @ 15V, 15A	-	-	Standard	-	21ns/110ns	300V, 15A, 18Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
IKWH75N65EH7XKSA1	Infineon Technologies	IGBT TRENCH FS 650V 80A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 300 A Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A Power - Max: 341 W Switching Energy: 2.42mJ (on), 1.4mJ (off) Input Type: Standard Gate Charge: 150 nC Td (on/off) @ 25°C: 25ns/45ns Test Condition: 400V, 75A, 10Ohm, 15V Reverse Recovery Time (trr): 89 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-32	Paquete: -	En existencias642	650 V	80 A	300 A	1.65V @ 15V, 75A	341 W	2.42mJ (on), 1.4mJ (off)	Standard	150 nC	25ns/45ns	400V, 75A, 10Ohm, 15V	89 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-32
AIMDQ75R060M1HXUMA1	Infineon Technologies	AUTOMOTIVE_SICMOS IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paquete: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AIGB40N65F5ATMA1	Infineon Technologies	DISCRETE SWITCHES IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2	Paquete: -	Request a Quote	650 V	40 A	-	-	-	-	Standard	-	-	-	-	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	PG-TO263-3-2
SIGC84T120R3LEX1SA7	Infineon Technologies	IGBT 1200V 75A DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 225 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paquete: -	Request a Quote	1200 V	-	225 A	2.1V @ 15V, 75A	-	-	Standard	-	-	-	-	-	-	-	-
IHW30N160R2FKSA1	Infineon Technologies	IGBT 1600V 60A 312W TO247-3 IGBT Type: NPT, Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1600 V Current - Collector (Ic) (Max): 60 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Power - Max: 312 W Switching Energy: 4.37mJ Input Type: Standard Gate Charge: 94 nC Td (on/off) @ 25°C: -/525ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-1	Paquete: -	Request a Quote	1600 V	60 A	90 A	2.1V @ 15V, 30A	312 W	4.37mJ	Standard	94 nC	-/525ns	600V, 30A, 10Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-1