Transistores - FET, MOSFET - Simple

GP2M002A060CG

Global Power Technologies Group

MOSFET N-CH 600V 2A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 52.1W (Tc)
• Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

NTMFS4854NST1G

ON Semiconductor

MOSFET N-CH 25V 15.2A SO-8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 149A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 3.2V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 85nC @ 11.5V
• Input Capacitance (Ciss) (Max) @ Vds: 4830pF @ 12V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 900mW (Ta), 86.2W (Tc)
• Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SO-8FL
• Package / Case: 8-PowerTDFN

Paquete: 8-PowerTDFN

FQP19N20L

Fairchild/ON Semiconductor

MOSFET N-CH 200V 21A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 140W (Tc)
• Rds On (Max) @ Id, Vgs: 140 mOhm @ 10.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3

Paquete: TO-220-3

BSS138W-7

Diodes Incorporated

MOSFET N-CH 50V 0.2A SOT323

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200mW (Ta)
• Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-323
• Package / Case: SC-70, SOT-323

Paquete: SC-70, SOT-323

IRFPF40

Vishay Siliconix

MOSFET N-CH 900V 4.7A TO-247AC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

Paquete: TO-247-3

IRF740A

Vishay Siliconix

MOSFET N-CH 400V 10A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 400V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paquete: TO-220-3

AUIRF4905L

Infineon Technologies

MOSFET P-CH 55V 74A TO-262

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 42A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262

Paquete: TO-262

IXFR180N10

IXYS

MOSFET N-CH 100V 165A ISOPLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 400W (Tc)
• Rds On (Max) @ Id, Vgs: 8 mOhm @ 90A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS247?
• Package / Case: ISOPLUS247?

Paquete: ISOPLUS247?

IXFH50N60X

IXYS

MOSFET N-CH 600V 50A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4660pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 660W (Tc)
• Rds On (Max) @ Id, Vgs: 73 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

Paquete: TO-247-3

XP151A11B0MR-G

Torex Semiconductor Ltd

MOSFET N-CH 30V 1A SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 120 mOhm @ 500mA, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paquete: TO-236-3, SC-59, SOT-23-3

STW20N60M2-EP

STMicroelectronics

MOSFET N-CH 600V 13A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 100V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 278 mOhm @ 6.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

Paquete: TO-247-3

TSM3N80CP ROG

TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 696pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 94W (Tc)
• Rds On (Max) @ Id, Vgs: 4.2 Ohm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

EPC2015C

EPC

TRANS GAN 40V 33A BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 53A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 9mA
• Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 20V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 33A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

Paquete: Die

SI7414DN-T1-E3

Vishay Siliconix

MOSFET N-CH 60V 5.6A 1212-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 8.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? 1212-8
• Package / Case: PowerPAK? 1212-8

Paquete: PowerPAK? 1212-8

SI7462DP-T1-E3

Vishay Siliconix

MOSFET N-CH 200V 2.6A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 130mOhm @ 4.1A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8
• Package / Case: PowerPAK® SO-8

Paquete: -

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SSF10N80A

Fairchild Semiconductor

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800 V
• Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 100W (Tc)
• Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3PF
• Package / Case: TO-3P-3 Full Pack

Paquete: -

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MCH5809-TL-E

onsemi

NCH+SBD 2.5V DRIVE SERIES

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Paquete: -

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G65P06T

Goford Semiconductor

P-60V,RD(MAX)<18M@-10V,VTH-2.0V~

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 130W (Tc)
• Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

Paquete: -

C3M0075120D

Wolfspeed, Inc.

SICFET N-CH 1200V 30A TO247-3

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 4V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
• Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
• Vgs (Max): +19V, -8V
• FET Feature: -
• Power Dissipation (Max): 113.6W (Tc)
• Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

Paquete: -

IRF231

Harris Corporation

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150 V
• Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 75W (Tc)
• Rds On (Max) @ Id, Vgs: 400mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3
• Package / Case: TO-204AA, TO-3

Paquete: -

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NVMTSC4D3N15MC

onsemi

PTNG 150V IN CEBU DFNW 8X8 DUAL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150 V
• Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 165A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 521µA
• Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5W (Ta), 292W (Tc)
• Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: 8-TDFNW (8.3x8.4)
• Package / Case: 8-PowerTDFN

Paquete: -

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DMP2065UQ-13

Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT23 T&R 1

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 15 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 900mW
• Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paquete: -

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GAN190-650EBEZ

Nexperia USA Inc.

650 V, 190 MOHM GALLIUM NITRIDE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V
• Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
• Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
• Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
• Vgs (Max): +7V, -1.4V
• FET Feature: -
• Power Dissipation (Max): 125W (Ta)
• Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: DFN8080-8
• Package / Case: 8-VDFN Exposed Pad

Paquete: -

DMP2040UVT-13

Diodes Incorporated

MOSFET P-CH 20V TSOT26

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.2W (Ta)
• Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSOT-26
• Package / Case: SOT-23-6 Thin, TSOT-23-6

Paquete: -

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ISC0804NLSATMA1

Infineon Technologies

MOSFET N-CH 100V 12A/59A TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 59A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 28µA
• Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
• Rds On (Max) @ Id, Vgs: 10.9mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

Paquete: -

PJS6400_S1_00001

Panjit International Inc.

30V N-CHANNEL ENHANCEMENT MODE M

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 1.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 37mOhm @ 6.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-6
• Package / Case: SOT-23-6

Paquete: -

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SISA10BDN-T1-GE3

Vishay Siliconix

N-CHANNEL 30-V (D-S) MOSFET POWE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 104A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 36.2 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 15 V
• Vgs (Max): +20V, -16V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 63W (Tc)
• Rds On (Max) @ Id, Vgs: 3.6mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® 1212-8
• Package / Case: PowerPAK® 1212-8

Paquete: -

SIS106DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 60V 9.8A/16A PPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
• Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® 1212-8
• Package / Case: PowerPAK® 1212-8

Paquete: -