Imagen |
Nº de pieza |
Fabricantes |
Descripción |
Paquete |
En existencias |
Cantidad |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 80A D2PAK
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias3.824 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 4V @ 150µA | 96nC @ 10V | 3800pF @ 25V | ±20V | - | 215W (Tc) | 8 mOhm @ 58A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 140A I-PAK
|
Paquete: TO-251-3 Short Leads, IPak, TO-251AA |
En existencias76.668 |
|
MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 50nC @ 4.5V | 4010pF @ 15V | ±20V | - | 140W (Tc) | 4.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A SOP8 2-6J1B
|
Paquete: 8-SOIC (0.173", 4.40mm Width) |
En existencias3.376 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 39nC @ 10V | 1860pF @ 10V | ±20V | - | 1W (Ta) | 14 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
||
ON Semiconductor |
MOSFET N-CH 20V 3.3A SOT-23
|
Paquete: TO-236-3, SC-59, SOT-23-3 |
En existencias3.026.508 |
|
MOSFET (Metal Oxide) | 20V | - | 1.8V, 4.5V | 1V @ 250µA | 7.3nC @ 4.5V | 540pF @ 10V | ±8V | - | 820mW (Ta) | 50 mOhm @ 3.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
NXP |
MOSFET N-CH 55V 68A D2PAK
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias5.856 |
|
MOSFET (Metal Oxide) | 55V | 68A (Tc) | 10V | 4V @ 1mA | - | 2900pF @ 25V | ±16V | - | 142W (Tc) | 14 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 600V 7A IPAK
|
Paquete: TO-251-3 Short Leads, IPak, TO-251AA |
En existencias2.224 |
|
MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 560pF @ 50V | ±25V | - | 70W (Tc) | 650 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
MOSFET P-CH 200V 1.9A DPAK
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias7.568 |
|
MOSFET (Metal Oxide) | 200V | 1.9A (Tc) | 10V | 4V @ 250µA | 8.9nC @ 10V | 170pF @ 25V | ±20V | - | 2.5W (Ta), 25W (Tc) | 3 Ohm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 60V 17A DPAK
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias5.984 |
|
MOSFET (Metal Oxide) | 60V | 5A (Ta), 17A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 14nC @ 10V | 365pF @ 25V | ±20V | - | 3.4W (Ta), 49W (Tc) | 64 mOhm @ 9A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET P-CH 30V 9.8A POWERDI3333
|
Paquete: 8-PowerWDFN |
En existencias6.112 |
|
MOSFET (Metal Oxide) | 30V | 9.8A (Ta) | 4.5V, 20V | 3V @ 250µA | 58nC @ 10V | 2987pF @ 15V | ±25V | - | 940mW (Ta) | 11 mOhm @ 12A, 20V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
||
ON Semiconductor |
MOSFET P-CH 20V 2.35A 6-TSOP
|
Paquete: SOT-23-6 |
En existencias108.168 |
|
MOSFET (Metal Oxide) | 20V | 1.65A (Ta) | - | 1.5V @ 250µA | 14nC @ 4.5V | 480pF @ 5V | - | - | - | 90 mOhm @ 3.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 |
||
TSC America Inc. |
MOSFET, SINGLE, P-CHANNEL, -20V,
|
Paquete: TO-236-3, SC-59, SOT-23-3 |
En existencias6.544 |
|
MOSFET (Metal Oxide) | 20V | 4.7A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 12.5nC @ 4.5V | 1020pF @ 10V | ±8V | - | 1.25W (Ta) | 39 mOhm @ 4.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
STMicroelectronics |
MOSFET N-CH 30V 15A 8-PWRSOIC
|
Paquete: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
En existencias21.594 |
|
MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 1V @ 250µA | 24nC @ 4.5V | 1810pF @ 25V | ±16V | - | 3W (Ta), 50W (Tc) | 5.7 mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC-EP | 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
||
STMicroelectronics |
MOSFET N-CH 800V 6.5A TO-220
|
Paquete: TO-220-3 |
En existencias6.960 |
|
MOSFET (Metal Oxide) | 800V | 6.5A (Tc) | 10V | 5V @ 250µA | 18nC @ 10V | 620pF @ 25V | ±30V | - | 90W (Tc) | 1.05 Ohm @ 3.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 78A TO220AB
|
Paquete: TO-220-3 |
En existencias22.152 |
|
MOSFET (Metal Oxide) | 30V | 78A (Tc) | 4.5V, 10V | 2.35V @ 100µA | 54nC @ 4.5V | 5110pF @ 15V | ±20V | - | 140W (Tc) | 3.2 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 100A LFPAK
|
Paquete: SC-100, SOT-669 |
En existencias15.036 |
|
MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 41nC @ 10V | 2458pF @ 12V | ±20V | - | 74W (Tc) | 3.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Vishay Siliconix |
MOSFET N-CH 30V 33A PPAK SO-8
|
Paquete: PowerPAK? SO-8 |
En existencias294.096 |
|
MOSFET (Metal Oxide) | 30V | 33A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 21.5nC @ 10V | 1000pF @ 15V | +20V, -16V | - | 3.3W (Ta), 14.7W (Tc) | 7.5 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Vishay Siliconix |
MOSFET P-CH 20V SC89-6
|
Paquete: SOT-563, SOT-666 |
En existencias285.684 |
|
MOSFET (Metal Oxide) | 20V | - | 1.5V, 4.5V | 1V @ 250µA | 31.1nC @ 8V | 965pF @ 10V | ±8V | - | 330mW (Ta) | 78 mOhm @ 1.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-6 | SOT-563, SOT-666 |
||
Renesas Electronics Corporation |
N CHANNEL POWER MOS FET
|
Paquete: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
SIC DISCRETE
|
Paquete: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Comchip Technology |
MOSFET N-CH 20V 7A SOT23-3
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 7A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 8.1 nC @ 4.5 V | 980 pF @ 10 V | ±12V | - | 1.3W (Ta) | 18mOhm @ 7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Diodes Incorporated |
MOSFET BVDSS: 31V~40V PowerDI333
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 13.6A (Ta), 49A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 12.3 nC @ 10 V | 881 pF @ 20 V | ±20V | - | 2.9W (Ta), 37.5W (Tc) | 8.9mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
Paquete: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Alpha & Omega Semiconductor Inc. |
N
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 22A (Ta), 48A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 95 nC @ 10 V | 4525 pF @ 50 V | ±20V | - | 6.2W (Ta), 113.5W (Tc) | 6.3mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
Toshiba Semiconductor and Storage |
G3 1200V SIC-MOSFET TO-247-4L 14
|
Paquete: - |
En existencias360 |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 20A (Tc) | 18V | 5V @ 1mA | 24 nC @ 18 V | 691 pF @ 800 V | +25V, -10V | - | 107W (Tc) | 191mOhm @ 10A, 18V | 175°C | Through Hole | TO-247-4L(X) | TO-247-4 |
||
Infineon Technologies |
MOSFET N-CH 950V 4A SOT223
|
Paquete: - |
En existencias71.499 |
|
MOSFET (Metal Oxide) | 950 V | 4A (Tc) | 10V | 3.5V @ 80µA | 10 nC @ 10 V | 330 pF @ 400 V | ±20V | - | 7W (Tc) | 2Ohm @ 1.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-4, TO-261AA |
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Good-Ark Semiconductor |
MOSFET, N-CH, SINGLE, 75A, 80V,
|
Paquete: - |
En existencias3 |
|
MOSFET (Metal Oxide) | 100 V | 140A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 100 nC @ 10 V | 6000 pF @ 50 V | ±20V | - | 192W (Tc) | 3.6mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PPAK (5.1x5.71) | 8-PowerTDFN |
||
Vishay Siliconix |
AUTOMOTIVE N-CHANNEL 40 V (D-S)
|
Paquete: - |
En existencias4.863 |
|
MOSFET (Metal Oxide) | 40 V | 504A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 294 nC @ 10 V | 15398 pF @ 25 V | ±20V | - | 266W (Tc) | 0.6mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8SW | PowerPAK® SO-8 |
||
Infineon Technologies |
MOSFET N-CH 40V 80A TO220-3
|
Paquete: - |
Request a Quote |
|
- | - | 80A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - |