Página 1085 - Transistores - FET, MOSFET - Simple | Productos semiconductores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Simple

Registros 42.029
Página  1.085/1.502
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Fabricantes
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Paquete
En existencias
Cantidad
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IPB100N06S3-03
Infineon Technologies

MOSFET N-CH 55V 100A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 480nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 21620pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias5.536
MOSFET (Metal Oxide)
55V
100A (Tc)
10V
4V @ 230µA
480nC @ 10V
21620pF @ 25V
±20V
-
300W (Tc)
3 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF6626TR1
Infineon Technologies

MOSFET N-CH 30V 16A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 16A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? ST
  • Package / Case: DirectFET? Isometric ST
Paquete: DirectFET? Isometric ST
En existencias4.320
MOSFET (Metal Oxide)
30V
16A (Ta), 72A (Tc)
4.5V, 10V
2.35V @ 250µA
29nC @ 4.5V
2380pF @ 15V
±20V
-
2.2W (Ta), 42W (Tc)
5.4 mOhm @ 16A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? ST
DirectFET? Isometric ST
AOC2415
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 3.5A 4WLCSP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1685pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 550mW (Ta)
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 1.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-AlphaDFN (1.57x1.57)
  • Package / Case: 4-SMD, No Lead
Paquete: 4-SMD, No Lead
En existencias6.192
MOSFET (Metal Oxide)
20V
3.5A (Ta)
1.5V, 4.5V
1V @ 250µA
28nC @ 4.5V
1685pF @ 10V
±8V
-
550mW (Ta)
33 mOhm @ 1.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
4-AlphaDFN (1.57x1.57)
4-SMD, No Lead
NP80N04KHE-E1-AY
Renesas Electronics America

MOSFET N-CH 40V 80A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias6.096
MOSFET (Metal Oxide)
40V
80A (Tc)
10V
4V @ 250µA
60nC @ 10V
3300pF @ 25V
±20V
-
1.8W (Ta), 120W (Tc)
8 mOhm @ 40A, 10V
175°C (TJ)
Surface Mount
TO-263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF17P10
Fairchild/ON Semiconductor

MOSFET P-CH 100V 10.5A TO-220F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 41W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 5.25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
Paquete: TO-220-3 Full Pack
En existencias2.128
MOSFET (Metal Oxide)
100V
10.5A (Tc)
10V
4V @ 250µA
39nC @ 10V
1100pF @ 25V
±30V
-
41W (Tc)
190 mOhm @ 5.25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
IPI111N15N3GAKSA1
Infineon Technologies

MOSFET N-CH 150V 83A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 160µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 75V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 83A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA
En existencias3.072
MOSFET (Metal Oxide)
150V
83A (Tc)
8V, 10V
4V @ 160µA
55nC @ 10V
3230pF @ 75V
±20V
-
214W (Tc)
11.1 mOhm @ 83A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2Pak, TO-262AA
IPL60R1K5C6SATMA1
Infineon Technologies

MOSFET N-CH 8TSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 26.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Thin-PAK (5x6)
  • Package / Case: 8-PowerTDFN
Paquete: 8-PowerTDFN
En existencias4.496
MOSFET (Metal Oxide)
600V
3A (Tc)
10V
3.5V @ 90µA
9.4nC @ 10V
200pF @ 100V
±20V
-
26.6W (Tc)
1.5 Ohm @ 1.1A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
Thin-PAK (5x6)
8-PowerTDFN
hot TK7P60W,RVQ
Toshiba Semiconductor and Storage

MOSFET N CH 600V 7A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 350µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias2.256.108
MOSFET (Metal Oxide)
600V
7A (Ta)
10V
3.7V @ 350µA
15nC @ 10V
490pF @ 300V
±30V
Super Junction
60W (Tc)
600 mOhm @ 3.5A, 10V
150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
DMP3036SFG-13
Diodes Incorporated

MOSFET P-CH 30V 8.7A PWRDI3333-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1931pF @ 15V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8
  • Package / Case: 8-PowerWDFN
Paquete: 8-PowerWDFN
En existencias6.928
MOSFET (Metal Oxide)
30V
8.7A (Ta)
5V, 10V
2.5V @ 250µA
16.5nC @ 10V
1931pF @ 15V
±25V
-
950mW (Ta)
20 mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI3333-8
8-PowerWDFN
2SK3746-1E
ON Semiconductor

MOSFET N-CH 1500V 2A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1500V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P-3L
  • Package / Case: TO-3P-3, SC-65-3
Paquete: TO-3P-3, SC-65-3
En existencias7.152
MOSFET (Metal Oxide)
1500V
2A (Ta)
10V
-
37.5nC @ 10V
380pF @ 30V
±20V
-
2.5W (Ta), 110W (Tc)
13 Ohm @ 1A, 10V
150°C (TJ)
Through Hole
TO-3P-3L
TO-3P-3, SC-65-3
STD40P3LLH6
STMicroelectronics

MOSFET PCH 40V 20A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias6.528
MOSFET (Metal Oxide)
30V
40A (Tc)
4.5V, 10V
2.5V @ 250µA
24nC @ 4.5V
2615pF @ 25V
±20V
-
60W (Tc)
15 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
NVD5C688NLT4G
ON Semiconductor

MOSFET N-CH 60V 17A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 18W (Tc)
  • Rds On (Max) @ Id, Vgs: 27.4 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias5.792
MOSFET (Metal Oxide)
60V
17A (Tc)
4.5V, 10V
2.1V @ 250µA
3.4nC @ 4.5V
400pF @ 25V
±16V
-
18W (Tc)
27.4 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
APT100MC120JCU2
Microsemi Corporation

MOSFET N-CH 1200V 143A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 143A
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.3V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 360nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5960pF @ 1000V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 600W (Tc)
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 20V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias4.048
MOSFET (Metal Oxide)
1200V
143A
20V
2.3V @ 2mA
360nC @ 20V
5960pF @ 1000V
+25V, -10V
-
600W (Tc)
17 mOhm @ 100A, 20V
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
hot FDH038AN08A1
Fairchild/ON Semiconductor

MOSFET N-CH 75V 80A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8665pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 450W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias131.052
MOSFET (Metal Oxide)
75V
22A (Ta), 80A (Tc)
6V, 10V
4V @ 250µA
160nC @ 10V
8665pF @ 25V
±20V
-
450W (Tc)
3.8 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247
TO-247-3
BUK9Y12-55B,115
Nexperia USA Inc.

MOSFET N-CH 55V 61.8A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 61.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 106W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
Paquete: SC-100, SOT-669
En existencias27.822
MOSFET (Metal Oxide)
55V
61.8A (Tc)
5V, 10V
2.15V @ 1mA
32nC @ 5V
2880pF @ 25V
±15V
-
106W (Tc)
11 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
hot VP2106N3-G
Microchip Technology

MOSFET P-CH 60V 0.25A TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias52.380
MOSFET (Metal Oxide)
60V
250mA (Tj)
5V, 10V
3.5V @ 1mA
-
60pF @ 25V
±20V
-
1W (Tc)
12 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
STP40N65M2
STMicroelectronics

MOSFET N-CH 650V 32A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2355pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 99 mOhm @ 16A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias7.712
MOSFET (Metal Oxide)
650V
32A (Tc)
10V
4V @ 250µA
56.5nC @ 10V
2355pF @ 100V
±25V
-
250W (Tc)
99 mOhm @ 16A, 10V
150°C (TJ)
Through Hole
TO-220
TO-220-3
TK090N65Z-S1F
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 30A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.27mA
  • Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paquete: -
En existencias81
MOSFET (Metal Oxide)
650 V
30A (Ta)
10V
4V @ 1.27mA
47 nC @ 10 V
2780 pF @ 300 V
±30V
-
230W (Tc)
90mOhm @ 15A, 10V
150°C
Through Hole
TO-247
TO-247-3
DMT10H9M9LSS-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V SO-8 T&R

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RQ6L035ATTCR
Rohm Semiconductor

PCH -60V -3.5A POWER MOSFET - RQ

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 78mOhm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
Paquete: -
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MOSFET (Metal Oxide)
60 V
3.5A (Ta)
4.5V, 10V
2.5V @ 1mA
22 nC @ 10 V
1190 pF @ 30 V
±20V
-
950mW (Ta)
78mOhm @ 3.5A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
SISS50DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 45V 29.7A/108A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 29.7A (Ta), 108A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.83mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8S
  • Package / Case: PowerPAK® 1212-8S
Paquete: -
En existencias36.000
MOSFET (Metal Oxide)
45 V
29.7A (Ta), 108A (Tc)
4.5V, 10V
2.3V @ 250µA
70 nC @ 10 V
4000 pF @ 20 V
+20V, -16V
-
5W (Ta), 65.7W (Tc)
2.83mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S
SQA470CEJW-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 30 V (D-S)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 20 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 13.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SC-70-6
  • Package / Case: PowerPAK® SC-70-6
Paquete: -
En existencias15.954
MOSFET (Metal Oxide)
30 V
2.25A (Tc)
2.5V, 4.5V
1.3V @ 250µA
6 nC @ 4.5 V
440 pF @ 20 V
±12V
-
13.6W (Tc)
65mOhm @ 3A, 4.5V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SC-70-6
PowerPAK® SC-70-6
AONS66923
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 15A/47A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
Paquete: -
En existencias49.377
MOSFET (Metal Oxide)
100 V
15A (Ta), 47A (Tc)
4.5V, 10V
2.6V @ 250µA
35 nC @ 10 V
1725 pF @ 50 V
±20V
-
5W (Ta), 48W (Tc)
10.8mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
RFL4N15
Harris Corporation

SMALL SIGNAL N-CHANNEL MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 8.33W (Tc)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-205AF (TO-39)
  • Package / Case: TO-205AF Metal Can
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
150 V
4A (Tc)
10V
4V @ 1mA
-
850 pF @ 25 V
±20V
-
8.33W (Tc)
400mOhm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-205AF (TO-39)
TO-205AF Metal Can
IQE006NE2LM5SCATMA1
Infineon Technologies

OPTIMOS LOWVOLTAGE POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-WHSON-8-1
  • Package / Case: 8-PowerWDFN
Paquete: -
En existencias17.727
MOSFET (Metal Oxide)
25 V
47A (Ta), 310A (Tc)
4.5V, 10V
2V @ 250µA
82 nC @ 10 V
5453 pF @ 12 V
±16V
-
2.1W (Ta), 89W (Tc)
0.58mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-WHSON-8-1
8-PowerWDFN
FDP150N10A-F102
onsemi

MOSFET N-CH 100V 50A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 91W (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
Paquete: -
En existencias1.869
MOSFET (Metal Oxide)
100 V
50A (Tc)
10V
4V @ 250µA
21 nC @ 10 V
1440 pF @ 50 V
±20V
-
91W (Tc)
15mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
MCMN2014-TP
Micro Commercial Co

MOSFET N-CHANNEL MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 700mW
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020-6J
  • Package / Case: 6-WDFN Exposed Pad
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
12 V
15A
2.5V, 8V
1.1V @ 250µA
23 nC @ 10 V
1300 pF @ 15 V
±8V
-
700mW
8mOhm @ 5A, 8V
-55°C ~ 150°C (TJ)
Surface Mount
DFN2020-6J
6-WDFN Exposed Pad
DMTH45M5LFVW-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 51W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
40 V
18A (Ta), 71A (Tc)
4.5V, 10V
2.3V @ 250µA
13.9 nC @ 10 V
978 pF @ 20 V
±20V
-
3.5W (Ta), 51W (Tc)
5.5mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN