Página 1083 - Transistores - FET, MOSFET - Simple | Productos semiconductores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Simple

Registros 42.029
Página  1.083/1.502
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRF9335PBF
Infineon Technologies

MOSFET P-CH 30V 5.4A 8-SO

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 386pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 59 mOhm @ 5.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias3.408
MOSFET (Metal Oxide)
30V
5.4A (Ta)
4.5V, 10V
2.4V @ 10µA
14nC @ 10V
386pF @ 25V
±20V
-
2.5W (Ta)
59 mOhm @ 5.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot IRFU3710Z-701P
Infineon Technologies

MOSFET N-CH 100V 42A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2930pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 33A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paquete: TO-251-3 Short Leads, IPak, TO-251AA
En existencias132.000
MOSFET (Metal Oxide)
100V
42A (Tc)
10V
4V @ 250µA
100nC @ 10V
2930pF @ 25V
±20V
-
140W (Tc)
18 mOhm @ 33A, 10V
-55°C ~ 175°C (TJ)
Through Hole
IPAK (TO-251)
TO-251-3 Short Leads, IPak, TO-251AA
hot IRFU9120N
Infineon Technologies

MOSFET P-CH 100V 6.6A I-PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 480 mOhm @ 3.9A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paquete: TO-251-3 Short Leads, IPak, TO-251AA
En existencias55.776
MOSFET (Metal Oxide)
100V
6.6A (Tc)
10V
4V @ 250µA
27nC @ 10V
350pF @ 25V
±20V
-
40W (Tc)
480 mOhm @ 3.9A, 10V
-55°C ~ 175°C (TJ)
Through Hole
IPAK (TO-251)
TO-251-3 Short Leads, IPak, TO-251AA
BSB104N08NP3GXUSA1
Infineon Technologies

MOSFET N-CH 80V 13A 2WDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.4 mOhm @ 10A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MG-WDSON-2, CanPAK M?
  • Package / Case: 3-WDSON
Paquete: 3-WDSON
En existencias6.400
MOSFET (Metal Oxide)
80V
13A (Ta), 50A (Tc)
10V
3.5V @ 40µA
31nC @ 10V
2100pF @ 40V
±20V
-
2.8W (Ta), 42W (Tc)
10.4 mOhm @ 10A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
MG-WDSON-2, CanPAK M?
3-WDSON
NTMFD4951NFT3G
ON Semiconductor

MOSFET N-CH 30V 10.8A SO8FL

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
  • Package / Case: 8-PowerTDFN
Paquete: 8-PowerTDFN
En existencias3.520
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
8-PowerTDFN
IXTA3N50P
IXYS

MOSFET N-CH 500V 3.6A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 409pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias3.904
MOSFET (Metal Oxide)
500V
3.6A (Tc)
10V
5.5V @ 50µA
9.3nC @ 10V
409pF @ 25V
±30V
-
70W (Tc)
2 Ohm @ 1.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (IXTA)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot STB10NK60Z-1
STMicroelectronics

MOSFET N-CH 600V 10A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA
En existencias37.404
MOSFET (Metal Oxide)
600V
10A (Tc)
10V
4.5V @ 250µA
70nC @ 10V
1370pF @ 25V
±30V
-
115W (Tc)
750 mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
SSM6J511NU,LF
Toshiba Semiconductor and Storage

MOSFET P-CH 12V 14A UDFN6B

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 6V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 4A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFNB (2x2)
  • Package / Case: 6-WDFN Exposed Pad
Paquete: 6-WDFN Exposed Pad
En existencias3.056
MOSFET (Metal Oxide)
12V
14A (Ta)
-
1V @ 1mA
47nC @ 4.5V
3350pF @ 6V
-
-
-
9.1 mOhm @ 4A, 8V
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFNB (2x2)
6-WDFN Exposed Pad
TSM250N02CX RFG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias3.440
MOSFET (Metal Oxide)
20V
5.8A (Tc)
1.8V, 4.5V
800mV @ 250µA
7.7nC @ 4.5V
535pF @ 10V
±10V
-
1.56W (Tc)
25 mOhm @ 4A, 4.5V
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
IXFB90N85X
IXYS

850V/90A ULT JUNC X-C HIPERFET P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 850V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1785W (Tc)
  • Rds On (Max) @ Id, Vgs: 41 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS264?
  • Package / Case: TO-264-3, TO-264AA
Paquete: TO-264-3, TO-264AA
En existencias3.696
MOSFET (Metal Oxide)
850V
90A (Tc)
10V
5.5V @ 8mA
340nC @ 10V
13300pF @ 25V
±30V
-
1785W (Tc)
41 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
PLUS264?
TO-264-3, TO-264AA
hot AOT14N50
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 500V 14A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2297pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 278W (Tc)
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias5.072
MOSFET (Metal Oxide)
500V
14A (Tc)
10V
4.5V @ 250µA
51nC @ 10V
2297pF @ 25V
±30V
-
278W (Tc)
380 mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
hot IPB60R165CP
Infineon Technologies

MOSFET N-CH 600V 21A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 790µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 192W (Tc)
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias402.000
MOSFET (Metal Oxide)
600V
21A (Tc)
10V
3.5V @ 790µA
52nC @ 10V
2000pF @ 100V
±20V
-
192W (Tc)
165 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot STL80N75F6
STMicroelectronics

MOSFET N-CH 75V 18A POWERFLAT56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7120pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
Paquete: 8-PowerSMD, Flat Leads
En existencias288.600
MOSFET (Metal Oxide)
75V
80A (Tc)
10V
4V @ 250µA
100nC @ 10V
7120pF @ 25V
±20V
-
80W (Tc)
6.3 mOhm @ 9A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerFlat? (5x6)
8-PowerSMD, Flat Leads
hot RTM002P02T2L
Rohm Semiconductor

MOSFET P-CH 20V 0.2A VMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 200mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VMT3
  • Package / Case: SOT-723
Paquete: SOT-723
En existencias885.816
MOSFET (Metal Oxide)
20V
200mA (Ta)
2.5V, 4.5V
2V @ 1mA
-
50pF @ 10V
±12V
-
150mW (Ta)
1.5 Ohm @ 200mA, 4.5V
150°C (TJ)
Surface Mount
VMT3
SOT-723
hot IXFH60N50P3
IXYS

MOSFET N-CH 500V 60A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1040W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias103.464
MOSFET (Metal Oxide)
500V
60A (Tc)
10V
5V @ 4mA
96nC @ 10V
6250pF @ 25V
±30V
-
1040W (Tc)
100 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
hot FDD6637
Fairchild/ON Semiconductor

MOSFET P-CH 35V 13A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 35V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 20V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias902.196
MOSFET (Metal Oxide)
35V
13A (Ta), 55A (Tc)
4.5V, 10V
3V @ 250µA
63nC @ 10V
2370pF @ 20V
±25V
-
3.1W (Ta), 57W (Tc)
11.6 mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-PAK (TO-252AA)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot BSS138LT1G
ON Semiconductor

MOSFET N-CH 50V 200MA SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 225mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias7.160.040
MOSFET (Metal Oxide)
50V
200mA (Ta)
5V
1.5V @ 1mA
-
50pF @ 25V
±20V
-
225mW (Ta)
3.5 Ohm @ 200mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
G2304
Goford Semiconductor

MOSFET N-CH 30V 3.6A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 58mOhm @ 3.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: -
En existencias26.610
MOSFET (Metal Oxide)
30 V
3.6A (Tc)
4.5V, 10V
2.2V @ 250µA
4 nC @ 10 V
230 pF @ 15 V
±20V
-
1.7W (Tc)
58mOhm @ 3.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
H5N2521FN-E-T2
Renesas Electronics Corporation

POWER FIELD-EFFECT TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Ta)
  • Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FN
  • Package / Case: TO-220-3 Full Pack
Paquete: -
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MOSFET (Metal Oxide)
250 V
3A (Ta)
10V
4.5V @ 1mA
5.3 nC @ 10 V
160 pF @ 25 V
±30V
-
20W (Ta)
2.2Ohm @ 1.5A, 10V
150°C
Through Hole
TO-220FN
TO-220-3 Full Pack
SI3499DV-T1-BE3
Vishay Siliconix

P-CHANNEL 1.5-V (G-S) MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8 V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 750mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±5V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
Paquete: -
En existencias2.610
MOSFET (Metal Oxide)
8 V
5.3A (Ta)
1.5V, 4.5V
750mV @ 250µA
42 nC @ 4.5 V
-
±5V
-
1.1W (Ta)
23mOhm @ 7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
UF3SC065030B7S
Qorvo

650V/30MOHM, SIC, STACKED FAST C

  • FET Type: N-Channel
  • Technology: SiCFET (Cascode SiCJFET)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 6V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Paquete: -
En existencias8.028
SiCFET (Cascode SiCJFET)
650 V
62A (Tc)
12V
6V @ 10mA
43 nC @ 12 V
1500 pF @ 100 V
±25V
-
214W (Tc)
35mOhm @ 40A, 12V
175°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
NTBG030N120M3S
onsemi

SILICON CARBIDE (SIC) MOSFET - E

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.4V @ 15mA
  • Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 348W (Tc)
  • Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Paquete: -
En existencias2.394
SiC (Silicon Carbide Junction Transistor)
1200 V
77A (Tc)
18V
4.4V @ 15mA
107 nC @ 18 V
2430 pF @ 800 V
+22V, -10V
-
348W (Tc)
39mOhm @ 30A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SCT3022ALHRC11
Rohm Semiconductor

SICFET N-CH 650V 93A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 339W
  • Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
Paquete: -
En existencias6.738
SiCFET (Silicon Carbide)
650 V
93A (Tc)
18V
5.6V @ 18.2mA
133 nC @ 18 V
2208 pF @ 500 V
+22V, -4V
-
339W
28.6mOhm @ 36A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
SIHB24N80AE-GE3
Vishay Siliconix

MOSFET N-CH 800V 21A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Paquete: -
En existencias1.752
MOSFET (Metal Oxide)
800 V
21A (Tc)
-
4V @ 250µA
89 nC @ 10 V
1836 pF @ 100 V
±30V
-
208W (Tc)
184mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
CMUDM8001-TR-PBFREE
Central Semiconductor Corp

MOSFET P-CH 20V 100MA SOT523

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.66 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 3 V
  • Vgs (Max): 10V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta)
  • Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
Paquete: -
En existencias33.888
MOSFET (Metal Oxide)
20 V
100mA (Ta)
1.5V, 4V
1.1V @ 250µA
0.66 nC @ 4.5 V
45 pF @ 3 V
10V
-
250mW (Ta)
8Ohm @ 10mA, 4V
-65°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
TSM070NB04CR-RLG
Taiwan Semiconductor Corporation

MOSFET N-CH 40V 15A/75A 8PDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2403 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PDFN (5.2x5.75)
  • Package / Case: 8-PowerLDFN
Paquete: -
En existencias21.960
MOSFET (Metal Oxide)
40 V
15A (Ta), 75A (Tc)
10V
4V @ 250µA
40 nC @ 10 V
2403 pF @ 20 V
±20V
-
3.1W (Ta), 83W (Tc)
7mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-PDFN (5.2x5.75)
8-PowerLDFN
PJL9404_R2_00001
Panjit International Inc.

30V N-CHANNEL ENHANCEMENT MODE M

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 343 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
30 V
6A (Ta)
4.5V, 10V
2.1V @ 250µA
7.8 nC @ 10 V
343 pF @ 15 V
±20V
-
1.7W (Ta)
28mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
AP2P053N-HF-ML
MOSLEADER

Single P -20V -4.2A SOT-23S

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paquete: -
Request a Quote
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