Página 8 - Transistores - FET, MOSFET - Arreglos | Productos semiconductores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Arreglos

Registros 5.684
Página  8/203
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
AON2801L#A
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 20V 3A DFN2X2-6L

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-DFN (2x2)
Paquete: 6-WDFN Exposed Pad
En existencias3.120
Logic Level Gate
20V
3A
120 mOhm @ 3A, 4.5V
1V @ 250µA
6.5nC @ 4.5V
700pF @ 10V
1.5W
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-DFN (2x2)
hot FW707-TL-E
ON Semiconductor

MOSFET 2P-CH 30V 8A 8SOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
  • Power - Max: 2.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP
Paquete: 8-SOIC (0.173", 4.40mm Width)
En existencias6.948
Logic Level Gate
30V
8A
26 mOhm @ 8A, 10V
-
18nC @ 10V
900pF @ 10V
2.5W
150°C (TJ)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP
hot SI3905DV-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 8V 6-TSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
Paquete: SOT-23-6 Thin, TSOT-23-6
En existencias156.012
Logic Level Gate
8V
-
125 mOhm @ 2.5A, 4.5V
450mV @ 250µA (Min)
6nC @ 4.5V
-
1.15W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
hot NTHD2102PT1
ON Semiconductor

MOSFET 2P-CH 8V 3.4A CHIPFET

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A
  • Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 2.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6.4V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: ChipFET?
Paquete: 8-SMD, Flat Lead
En existencias287.424
Logic Level Gate
8V
3.4A
58 mOhm @ 3.4A, 4.5V
1.5V @ 250µA
16nC @ 2.5V
715pF @ 6.4V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
ChipFET?
ALD1102BSAL
Advanced Linear Devices Inc.

MOSFET 2P-CH 10.6V 8SOIC

  • FET Type: 2 P-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias2.736
Standard
10.6V
-
-
-
-
-
500mW
0°C ~ 70°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
NTMFD4C87NT3G
ON Semiconductor

MOSFET 2N-CH 30V 8DFN

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A
  • Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6)
Paquete: 8-PowerTDFN
En existencias2.768
Standard
30V
11.7A, 14.9A
5.4 mOhm @ 30A, 10V
2.2V @ 250µA
22.2nC @ 10V
1252pF @ 15V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6)
FDMC007N30D
Fairchild/ON Semiconductor

PT8+ TECHNOLOGY 30V DUAL N-CHANN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 46A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-MLP (3x3)
Paquete: 8-PowerWDFN
En existencias7.376
Standard
30V
46A
-
3V @ 250µA
-
-
-
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-MLP (3x3)
EFC6602R-TR
ON Semiconductor

MOSFET 2N-CH EFCP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFBGA
  • Supplier Device Package: 6-EFCP (2.7x1.81)
Paquete: 6-XFBGA
En existencias2.080
Logic Level Gate, 2.5V Drive
-
-
-
-
55nC @ 4.5V
-
2W
150°C (TJ)
Surface Mount
6-XFBGA
6-EFCP (2.7x1.81)
APTM120H29FG
Microsemi Corporation

MOSFET 4N-CH 1200V 34A SP6

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 34A
  • Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
  • Power - Max: 780W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
Paquete: SP6
En existencias7.072
Standard
1200V (1.2kV)
34A
348 mOhm @ 17A, 10V
5V @ 5mA
374nC @ 10V
10300pF @ 25V
780W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
AUIRF7103QTR
Infineon Technologies

MOSFET 2N-CH 50V 3A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V
  • Power - Max: 2.4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias7.968
Standard
50V
3A
130 mOhm @ 3A, 10V
3V @ 250µA
15nC @ 10V
255pF @ 25V
2.4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
FDMD8560L
Fairchild/ON Semiconductor

MOSFET 2N-CH 46V 22A POWER

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 22A, 93A
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 22A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11130pF @ 30V
  • Power - Max: 2.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-Power 5x6
Paquete: 8-PowerWDFN
En existencias5.984
Standard
60V
22A, 93A
3.2 mOhm @ 22A, 10V
3V @ 250µA
128nC @ 10V
11130pF @ 30V
2.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-Power 5x6
hot SIA913ADJ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 12V 4.5A SC70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 61 mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 6V
  • Power - Max: 6.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
Paquete: PowerPAK? SC-70-6 Dual
En existencias3.192.612
Logic Level Gate
12V
4.5A
61 mOhm @ 3.6A, 4.5V
1V @ 250µA
20nC @ 8V
590pF @ 6V
6.5W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
DMT3020LFDB-7
Diodes Incorporated

MOSFET 2N-CHA 30V 7.7A DFN2020

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.7A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
Paquete: 6-UDFN Exposed Pad
En existencias26.082
Standard
30V
7.7A
20 mOhm @ 9A, 10V
3V @ 250µA
7nC @ 10V
393pF @ 15V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
hot IRF7329TRPBF
Infineon Technologies

MOSFET 2P-CH 12V 9.2A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 9.2A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias7.936
Logic Level Gate
12V
9.2A
17 mOhm @ 9.2A, 4.5V
900mV @ 250µA
57nC @ 4.5V
3450pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot FDS6930B
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 5.5A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 412pF @ 15V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias149.940
Logic Level Gate
30V
5.5A
38 mOhm @ 5.5A, 10V
3V @ 250µA
3.8nC @ 5V
412pF @ 15V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMC2710UVQ-7
Diodes Incorporated

MOSFET N/P-CH 20V 1.1A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
  • Power - Max: 460mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
Paquete: -
En existencias8.670
-
20V
1.1A (Ta), 800mA (Ta)
400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
1V @ 250µA
0.6nC @ 4.5V, 0.7nC @ 4.5V
42pF @ 16V, 49pF @ 16V
460mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
NVMFD5C470NLT1G
onsemi

MOSFET 2N-CH 40V 11A/36A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
  • Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
  • Power - Max: 3W (Ta), 24W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Paquete: -
Request a Quote
-
40V
11A (Ta), 36A (Tc)
11.5mOhm @ 5A, 10V
2.2V @ 20µA
4nC @ 4.5V
590pF @ 25V
3W (Ta), 24W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
DMP4026LSD-13
Diodes Incorporated

MOSFET 2P-CH 40V 6.5A 8SO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2064pF @ 20V
  • Power - Max: 1.3W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: -
Request a Quote
-
40V
6.5A (Ta)
25mOhm @ 3A, 10V
1.8V @ 250µA
45.8nC @ 10V
2064pF @ 20V
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
PJT7839_R1_00001
Panjit International Inc.

MOSFET 2P-CH 60V 0.25A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 51pF @ 25V
  • Power - Max: 350mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paquete: -
En existencias11.532
-
60V
250mA (Ta)
4Ohm @ 500mA, 10V
2.5V @ 250µA
1.1nC @ 4.5V
51pF @ 25V
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
PJL9801_R2_00001
Panjit International Inc.

MOSFET 2P-CH 30V 5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 15V
  • Power - Max: 2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: -
En existencias5.988
-
30V
5A (Ta)
54mOhm @ 5A, 10V
1.3V @ 250µA
9.1nC @ 4.5V
816pF @ 15V
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SQJ500AEP-T1_BE3
Vishay Siliconix

MOSFET N/P-CH 40V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 27mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38.3nC @ 10V, 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1843pF @ 20V, 1628pF @ 20V
  • Power - Max: 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8
  • Supplier Device Package: PowerPAK® SO-8
Paquete: -
En existencias17.814
-
40V
30A (Tc)
9.2mOhm @ 9.8A, 10V, 27mOhm @ 6A, 10V
2.3V @ 250µA, 2.5V @ 250µA
38.3nC @ 10V, 45nC @ 10V
1843pF @ 20V, 1628pF @ 20V
48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
UPA2752GR-E1-A
Renesas

MOSFET 2N-CH 30V 8A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
  • Power - Max: 1.7W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP
Paquete: -
Request a Quote
-
30V
8A (Tc)
23mOhm @ 4A, 10V
2.5V @ 1mA
10nC @ 10V
480pF @ 10V
1.7W (Ta)
150°C
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP
SP8K33TB1
Rohm Semiconductor

MOSFET 2N-CH 60V 8SOP

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MSCSM170AM45CT1AG
Microchip Technology

SIC 2N-CH 1700V 64A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V
  • Power - Max: 319W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
1700V (1.7kV)
64A (Tc)
45mOhm @ 30A, 20V
3.2V @ 2.5mA
178nC @ 20V
3300pF @ 1000V
319W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
FS10ASJ-3-T13-C02
Renesas Electronics Corporation

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
PJS6602_S2_00001
Panjit International Inc.

MOSFET N/P-CH 20V 5.2A SOT23-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 3.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 5.2A, 4.5V, 82mOhm @ 3.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V, 7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 396pF @ 10V, 522pF @ 10V
  • Power - Max: 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
Paquete: -
Request a Quote
-
20V
5.2A (Ta), 3.4A (Ta)
36mOhm @ 5.2A, 4.5V, 82mOhm @ 3.4A, 4.5V
1.2V @ 250µA
4.1nC @ 4.5V, 7nC @ 4.5V
396pF @ 10V, 522pF @ 10V
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
FF3MR12KM1PHOSA1
Infineon Technologies

SIC 2N-CH 1200V 375A AG-62MM

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.83mOhm @ 375A, 15V
  • Vgs(th) (Max) @ Id: 5.15V @ 168mA
  • Gate Charge (Qg) (Max) @ Vgs: 1000nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 29800pF @ 25V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-62MM
Paquete: -
Request a Quote
-
1200V (1.2kV)
375A (Tc)
2.83mOhm @ 375A, 15V
5.15V @ 168mA
1000nC @ 15V
29800pF @ 25V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-62MM
MSCSM170AM15CT3AG
Microchip Technology

SIC 2N-CH 1700V 181A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 181A (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
  • Power - Max: 862W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
1700V (1.7kV)
181A (Tc)
15mOhm @ 90A, 20V
3.2V @ 7.5mA
534nC @ 20V
9900pF @ 1000V
862W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-