Página 7 - Transistores - FET, MOSFET - Arreglos | Productos semiconductores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Arreglos

Registros 5.684
Página  7/203
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IPG20N06S3L-23
Infineon Technologies

MOSFET 2N-CH 55V 20A TDSON-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
  • Power - Max: 45W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
Paquete: 8-PowerVDFN
En existencias5.392
Logic Level Gate
55V
20A
23 mOhm @ 16A, 10V
2.2V @ 20µA
42nC @ 10V
2950pF @ 25V
45W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-4
FDS6986AS_SN00192
Fairchild/ON Semiconductor

MOSFET 2N-CH 8SOIC

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias2.672
-
-
-
-
-
-
-
-
-
-
-
-
AO6800L_003
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 3.4A 6-TSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
  • Power - Max: 1.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
Paquete: SC-74, SOT-457
En existencias6.400
Logic Level Gate
30V
3.4A
60 mOhm @ 3.4A, 10V
1.5V @ 250µA
10nC @ 10V
235pF @ 15V
1.15W
-55°C ~ 150°C (TJ)
Surface Mount
SC-74, SOT-457
6-TSOP
MP6K31TCR
Rohm Semiconductor

MOSFET 2N-CH 60V 2A MPT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: MPT6
Paquete: 6-SMD, Flat Leads
En existencias5.776
Logic Level Gate, 4V Drive
60V
2A
290 mOhm @ 2A, 10V
2.5V @ 1mA
2nC @ 5V
110pF @ 10V
2W
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
MPT6
SI4908DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 40V 5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.1A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V
  • Power - Max: 2.75W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias3.536
Standard
40V
5A
60 mOhm @ 4.1A, 10V
2.2V @ 250µA
12nC @ 10V
355pF @ 20V
2.75W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
APTM10DHM09TG
Microsemi Corporation

MOSFET 2N-CH 100V 139A SP4

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 139A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
Paquete: SP4
En existencias3.760
Standard
100V
139A
10 mOhm @ 69.5A, 10V
4V @ 2.5mA
350nC @ 10V
9875pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTM20AM08FTG
Microsemi Corporation

MOSFET 2N-CH 200V 208A SP4

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 208A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
  • Power - Max: 781W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
Paquete: SP4
En existencias4.240
Standard
200V
208A
10 mOhm @ 104A, 10V
5V @ 5mA
280nC @ 10V
14400pF @ 25V
781W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
ALD114813PCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16DIP

  • FET Type: 4 N-Channel, Matched Pair
  • FET Feature: Depletion Mode
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 2.7V
  • Vgs(th) (Max) @ Id: 1.26V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
Paquete: 16-DIP (0.300", 7.62mm)
En existencias5.168
Depletion Mode
10.6V
12mA, 3mA
500 Ohm @ 2.7V
1.26V @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
hot SH8K15TB1
Rohm Semiconductor

MOSFET 2N-CH 30V 9A 8SOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias30.000
Logic Level Gate
30V
9A
21 mOhm @ 9A, 10V
2.5V @ 1mA
8.5nC @ 5V
630pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
UPA2660T1R-E2-AX
Renesas Electronics America

MOSFET 2N-CH 20V 4A 6SON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 62 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
  • Power - Max: 2.3W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WFDFN Exposed Pad
  • Supplier Device Package: 6-HUSON (2x2)
Paquete: 6-WFDFN Exposed Pad
En existencias6.928
Logic Level Gate, 2.5V Drive
20V
4A
62 mOhm @ 2A, 4.5V
-
4.5nC @ 10V
330pF @ 10V
2.3W
150°C (TJ)
Surface Mount
6-WFDFN Exposed Pad
6-HUSON (2x2)
PMDT290UNE,115
Nexperia USA Inc.

MOSFET 2N-CH 20V 0.8A SOT666

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
Paquete: SOT-563, SOT-666
En existencias7.184
Logic Level Gate
20V
800mA
380 mOhm @ 500mA, 4.5V
950mV @ 250µA
0.68nC @ 4.5V
83pF @ 10V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-666
hot EM6M1T2R
Rohm Semiconductor

MOSFET N/P-CH 30V/20V EMT6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA, 200mA
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
Paquete: SOT-563, SOT-666
En existencias384.000
Logic Level Gate
30V, 20V
100mA, 200mA
8 Ohm @ 10mA, 4V
-
0.9nC @ 4.5V
13pF @ 5V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
EMT6
hot AO4818B
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias375.024
Logic Level Gate
30V
8A
19 mOhm @ 8A, 10V
2.4V @ 250µA
18nC @ 10V
888pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot FDC6321C
Fairchild/ON Semiconductor

MOSFET N/P-CH 25V SSOT-6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 680mA, 460mA
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: SuperSOT?-6
Paquete: SOT-23-6 Thin, TSOT-23-6
En existencias790.776
Logic Level Gate
25V
680mA, 460mA
450 mOhm @ 500mA, 4.5V
1.5V @ 250µA
2.3nC @ 5V
50pF @ 10V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
SuperSOT?-6
SH8KA1GZETB
Rohm Semiconductor

MOSFET 2N-CH 30V 4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: -
En existencias22.230
-
30V
4.5A (Ta)
80mOhm @ 4.5A, 10V
2.5V @ 1mA
3nC @ 10V
125pf @ 15V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SP8K52FRATB
Rohm Semiconductor

MOSFET 2N-CH 100V 3A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: -
En existencias7.380
-
100V
3A (Ta)
170mOhm @ 3A, 10V
2.5V @ 1mA
8.5nC @ 5V
610pF @ 25V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SSM6N7002KFU-LXH
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.3A US6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
  • Power - Max: 285mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
Paquete: -
En existencias16.605
-
60V
300mA (Ta)
1.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.6nC @ 4.5V
40pF @ 10V
285mW (Ta)
150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
MCQ4953-TP
Micro Commercial Co

MOSFET 2P-CH 30V 5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 4.9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: -
En existencias11.766
-
30V
5A
60mOhm @ 4.9A, 10V
2.5V @ 250µA
25nC @ 10V
-
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
UPA2793GR-0-E1-AZ
Renesas

MOSFET N/P-CH 40V 7A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 3.5A, 10V, 26mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP
Paquete: -
Request a Quote
-
40V
7A (Ta)
15mOhm @ 3.5A, 10V, 26mOhm @ 3.5A, 10V
2.5V @ 1mA
40nC @ 10V, 45nC @ 10V
2200pF @ 10V
2W (Ta)
150°C
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP
DMTH10H032LPDWQ-13
Diodes Incorporated

MOSFET 2N-CH 100V 24A POWERDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
  • Power - Max: 3W (Ta), 37W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type UXD)
Paquete: -
Request a Quote
-
100V
24A (Tc)
32mOhm @ 5A, 10V
2.5V @ 250µA
11.9nC @ 10V
683pF @ 50V
3W (Ta), 37W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8 (Type UXD)
NTTFD022N10C
onsemi

MOSFET 2N-CH 100V 6A/24A 12WQFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 24A (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 7.8A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 44µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 50V
  • Power - Max: 1.7W (Ta), 26W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-PowerWQFN
  • Supplier Device Package: 12-WQFN (3.3x3.3)
Paquete: -
Request a Quote
-
100V
6A (Ta), 24A (Tc)
25mOhm @ 7.8A, 10V
4V @ 44µA
9nC @ 10V
585pF @ 50V
1.7W (Ta), 26W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
12-PowerWQFN
12-WQFN (3.3x3.3)
MSCSM70AM10CT3AG
Microchip Technology

SIC 2N-CH 700V 241A SP3F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
  • Power - Max: 690W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F
Paquete: -
En existencias9
-
700V
241A (Tc)
9.5mOhm @ 80A, 20V
2.4V @ 8mA
430nC @ 20V
9000pF @ 700V
690W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP3F
MSCSM120AM042CT6LIAG
Microchip Technology

SIC 2N-CH 1200V 495A SP6C LI

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1kV
  • Power - Max: 2.031kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6C LI
Paquete: -
Request a Quote
-
1200V (1.2kV)
495A (Tc)
5.2mOhm @ 240A, 20V
2.8V @ 6mA
1392nC @ 20V
18100pF @ 1kV
2.031kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP6C LI
SCH2308-TL-E
onsemi

PCH+PCH 1.8V DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
NVMFD020N06CT1G
onsemi

MOSFET 2N-CH 60V 8A/27A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 27A (Tc)
  • Rds On (Max) @ Id, Vgs: 20.3mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 30V
  • Power - Max: 3.1W (Ta), 31W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Paquete: -
Request a Quote
-
60V
8A (Ta), 27A (Tc)
20.3mOhm @ 4A, 10V
4V @ 20µA
5.8nC @ 10V
355pF @ 30V
3.1W (Ta), 31W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
NTMFD5C650NLT1G
onsemi

MOSFET 2N-CH 60V 21A/111A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 98µA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
  • Power - Max: 3.5W (Ta), 125W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Paquete: -
Request a Quote
-
60V
21A (Ta), 111A (Tc)
4.2mOhm @ 20A, 10V
2.2V @ 98µA
37nC @ 10V
2546pF @ 25V
3.5W (Ta), 125W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
DMNH6065SSDQ-13
Diodes Incorporated

MOSFET 2N-CH 60V 3.8A 8SO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: -
Request a Quote
-
60V
3.8A (Ta)
65mOhm @ 3A, 10V
3V @ 250µA
11.3nC @ 10V
446pF @ 30V
1.5W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
MSCSM120AM31CT1AG
Microchip Technology

SIC 2N-CH 1200V 89A SP1F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
  • Power - Max: 395W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP1F
Paquete: -
En existencias21
-
1200V (1.2kV)
89A (Tc)
31mOhm @ 40A, 20V
2.8V @ 1mA
232nC @ 20V
3020pF @ 1000V
395W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP1F