Transistores - FET, MOSFET - Arreglos

IRF5851

Infineon Technologies

MOSFET N/PCH 20V 2.7A/2.2A 6TSOP

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.7A, 2.2A
• Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V
• Vgs(th) (Max) @ Id: 1.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
• Power - Max: 960mW
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: 6-TSOP

Paquete: SOT-23-6 Thin, TSOT-23-6

AO5804EL

Alpha & Omega Semiconductor Inc.

MOSFET N-CH SC89-3

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 500mA
• Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
• Power - Max: 280mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SC-89-6

Paquete: SOT-563, SOT-666

NTLGD3502NT1G

ON Semiconductor

MOSFET 2N-CH 20V 4.3A/3.6A 6DFN

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.6A
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 4.5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
• Power - Max: 1.74W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-VDFN Exposed Pad
• Supplier Device Package: 6-DFN (3x3)

Paquete: 6-VDFN Exposed Pad

SIA513DJ-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 4.5A SC70-6

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.5A
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V
• Power - Max: 6.5W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: PowerPAK? SC-70-6 Dual
• Supplier Device Package: PowerPAK? SC-70-6 Dual

Paquete: PowerPAK? SC-70-6 Dual

APTM100H80FT1G

Microsemi Corporation

MOSFET 4N-CH 1000V 11A SP1

• FET Type: 4 N-Channel (H-Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 1000V (1kV)
• Current - Continuous Drain (Id) @ 25°C: 11A
• Rds On (Max) @ Id, Vgs: 960 mOhm @ 9A, 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3876pF @ 25V
• Power - Max: 208W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Supplier Device Package: SP1

Paquete: SP1

STS4C3F60L

STMicroelectronics

MOSFET N/P-CH 60V 4A/3A 8SOIC

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 4A, 3A
• Rds On (Max) @ Id, Vgs: 55 mOhm @ 2A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

Paquete: 8-SOIC (0.154", 3.90mm Width)

APTC60HM83FT2G

Microsemi Corporation

MOSFET 2N-CH 600V 36A MODULE

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 36A
• Rds On (Max) @ Id, Vgs: 83 mOhm @ 18A, 10V
• Vgs(th) (Max) @ Id: 5V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7290pF @ 25V
• Power - Max: 250W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

Paquete: Module

ALD114913PAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

• FET Type: 2 N-Channel (Dual) Matched Pair
• FET Feature: Depletion Mode
• Drain to Source Voltage (Vdss): 10.6V
• Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
• Rds On (Max) @ Id, Vgs: 500 Ohm @ 2.7V
• Vgs(th) (Max) @ Id: 1.26V @ 1µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
• Power - Max: 500mW
• Operating Temperature: 0°C ~ 70°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-PDIP

Paquete: 8-DIP (0.300", 7.62mm)

LN60A01EP-LF

Monolithic Power Systems Inc.

MOSFET 3N-CH 600V 0.08A 8DIP

• FET Type: 3 N-Channel, Common Gate
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 80mA
• Rds On (Max) @ Id, Vgs: 190 Ohm @ 10mA, 10V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 1.3W
• Operating Temperature: -20°C ~ 125°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-PDIP

Paquete: 8-DIP (0.300", 7.62mm)

DMN3016LDN-13

Diodes Incorporated

MOSFET BVDSS: 25V 30V V-DFN3030-

• FET Type: 2 N-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 11A, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
• Power - Max: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: V-DFN3030-8 (Type J)

Paquete: 8-PowerVDFN

NTND3184NZTAG

ON Semiconductor

MOSFET N-CH 20V XLLGA6

• FET Type: 2 N-Channel (Dual)
• FET Feature: -
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
• Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 12.3pF @ 15V
• Power - Max: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-XFLGA
• Supplier Device Package: 6-XLLGA (.90x.65)

Paquete: 6-XFLGA

PMDXB600UNELZ

Nexperia USA Inc.

20 V, DUAL N-CHANNEL TRENCH MOSF

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 600mA
• Rds On (Max) @ Id, Vgs: 620 mOhm @ 600mA, 4.5V
• Vgs(th) (Max) @ Id: 950mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
• Power - Max: 380mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-XFDFN Exposed Pad
• Supplier Device Package: DFN1010B-6

Paquete: 6-XFDFN Exposed Pad

MTMC8E280LBF

Panasonic Electronic Components

MOSFET 2N-CH 20V 7A WMINI8

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 7A
• Rds On (Max) @ Id, Vgs: 21 mOhm @ 2A, 4.5V
• Vgs(th) (Max) @ Id: 1.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
• Power - Max: 1W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: WMini8-F1

Paquete: 8-SMD, Flat Lead

NTZD3154NT5G

ON Semiconductor

MOSFET 2N-CH 20V 0.54A SOT563

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 540mA
• Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
• Power - Max: 250mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563-6

Paquete: SOT-563, SOT-666

SI6954ADQ-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 3.1A 8TSSOP

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.1A
• Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.4A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 830mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-TSSOP

Paquete: 8-TSSOP (0.173", 4.40mm Width)

NTUD3169CZT5G

ON Semiconductor

MOSFET N/P-CH 20V SOT-963

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA
• Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V
• Power - Max: 125mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Supplier Device Package: SOT-963

Paquete: SOT-963

G09N06S2

Goford Semiconductor

MOSFET 2N-CH 60V 9A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
• Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 30V
• Power - Max: 2.6W (Tc)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

Paquete: -

SP8M3FU6TB1

Rohm Semiconductor

MOSFET N/P-CH 30V 5A/4.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4.5A (Ta)
• Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 8.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 850pF @ 10V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

Paquete: -

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PJX8808_R1_00001

Panjit International Inc.

MOSFET 2N-CH 20V 0.5A SOT563

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate, 1.2V Drive
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
• Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
• Power - Max: 300mW (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Paquete: -

DMN2991UDR4-7R

Diodes Incorporated

MOSFET 2N-CH 20V 0.5A 6DFN

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
• Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 280pC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 14.6pF @ 16V
• Power - Max: 380mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-XFDFN Exposed Pad
• Supplier Device Package: X2-DFN1010-6 (Type UXC)

Paquete: -

FDS8978-F40

onsemi

MOSFET 2N-CH 30V 7.5A 8SOIC

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
• Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 15V
• Power - Max: 1.6W (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

Paquete: -

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RFD20N03SM9AR4770

Fairchild Semiconductor

MOSFET N-CH 30V 20A

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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MSCSM170HRM11NG

Microchip Technology

SIC 4N-CH 1700V/1200V 226A

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 226A (Tc), 163A (Tc)
• Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V
• Vgs(th) (Max) @ Id: 3.2V @ 10mA, 2.8V @ 6mA
• Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V, 464nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V, 6040pF @ 1000V
• Power - Max: 1.012kW (Tc), 662W (Tc)
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

Paquete: -

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PJT7802_S1_00001

Panjit International Inc.

MOSFET 2N-CH 20V 0.5A SOT363

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
• Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
• Power - Max: 350mW (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

Paquete: -

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ECH8651R-R-TL-HX

onsemi

MOSFET

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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PJQ5848-AU_R2_000A1

Panjit International Inc.

MOSFET 2N-CH 40V 8.6A/30A 8DFN

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 30A (Tc)
• Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V
• Power - Max: 2W (Ta), 23.8W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: DFN5060B-8

Paquete: -

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FX50SMJ-2-B00

Renesas Electronics Corporation

MOSFET P-CH

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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PSMN029-100HLX

Nexperia USA Inc.

MOSFET 2N-CH 100V 30A LFPAK56D

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
• Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 29.6nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 3637pF @ 25V
• Power - Max: 68W (Ta)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-1205, 8-LFPAK56
• Supplier Device Package: LFPAK56D

Paquete: -