Página 38 - Transistores - FET, MOSFET - Arreglos | Productos semiconductores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Arreglos

Registros 5.684
Página  38/203
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRF9362PBF
Infineon Technologies

MOSFET 2P-CH 30V 8A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias5.648
Logic Level Gate
30V
8A
21 mOhm @ 8A, 10V
2.4V @ 25µA
39nC @ 10V
1300pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
IRF7750GTRPBF
Infineon Technologies

MOSFET 2P-CH 20V 4.7A 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
Paquete: 8-TSSOP (0.173", 4.40mm Width)
En existencias7.776
Logic Level Gate
20V
4.7A
30 mOhm @ 4.7A, 4.5V
1.2V @ 250µA
39nC @ 5V
1700pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot IRF7316TR
Infineon Technologies

MOSFET 2P-CH 30V 4.9A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A
  • Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias121.584
Logic Level Gate
30V
4.9A
58 mOhm @ 4.9A, 10V
1V @ 250µA
34nC @ 10V
710pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot PMGD130UN,115
NXP

MOSFET 2N-CH 20V 1.2A 6TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A
  • Rds On (Max) @ Id, Vgs: 145 mOhm @ 1.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
  • Power - Max: 390mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias42.000
Logic Level Gate
20V
1.2A
145 mOhm @ 1.2A, 4.5V
1V @ 250µA
1.3nC @ 4.5V
83pF @ 10V
390mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
SI4542DY-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 30V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias3.392
Logic Level Gate
30V
-
25 mOhm @ 6.9A, 10V
1V @ 250µA (Min)
50nC @ 10V
-
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SI4276DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
  • Power - Max: 3.6W, 2.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias3.952
Logic Level Gate
30V
8A
15.3 mOhm @ 9.5A, 10V
2.5V @ 250µA
26nC @ 10V
1000pF @ 15V
3.6W, 2.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI1972DH-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 1.3A SC-70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A
  • Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.3A, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 15V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6 (SOT-363)
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias526.224
Standard
30V
1.3A
225 mOhm @ 1.3A, 10V
2.8V @ 250µA
2.8nC @ 10V
75pF @ 15V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6 (SOT-363)
NTTD1P02R2G
ON Semiconductor

MOSFET 2P-CH 20V 1.45A 8MICRO

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.45A
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.45A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 16V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: Micro8?
Paquete: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
En existencias3.584
Logic Level Gate
20V
1.45A
160 mOhm @ 1.45A, 4.5V
1.4V @ 250µA
10nC @ 4.5V
265pF @ 16V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Micro8?
APTM50DDA10T3G
Microsemi Corporation

MOSFET 2N-CH 500V 37A SP3

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 37A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4367pF @ 25V
  • Power - Max: 312W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
Paquete: SP3
En existencias5.776
Standard
500V
37A
120 mOhm @ 18.5A, 10V
5V @ 1mA
96nC @ 10V
4367pF @ 25V
312W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
SP8M8FU6TB
Rohm Semiconductor

MOSFET N/P-CH 30V 6A/4.5A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias7.808
Logic Level Gate
30V
6A, 4.5A
30 mOhm @ 6A, 10V
2.5V @ 1mA
10.1nC @ 5V
520pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMC2041UFDB-13
Diodes Incorporated

MOSFET N/P-CH 20V 6UDFN

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
Paquete: 6-UDFN Exposed Pad
En existencias3.968
Standard
20V
4.7A, 3.2A
40 mOhm @ 4.2A, 4.5V
1.4V @ 250µA
15nC @ 8V
713pF @ 10V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
hot SI1028X-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V SC89-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 650 mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 15V
  • Power - Max: 220mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
Paquete: SOT-563, SOT-666
En existencias42.000
Logic Level Gate
30V
-
650 mOhm @ 500mA, 10V
2.5V @ 250µA
2nC @ 10V
16pF @ 15V
220mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SC-89-6
ALD310704APCL
Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

  • FET Type: 4 P-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 380mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
Paquete: 16-DIP (0.300", 7.62mm)
En existencias6.064
Standard
8V
-
-
380mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
AO6608
Alpha & Omega Semiconductor Inc.

MOSFET ARRAY N/P-CH 30/20V 6TSOP

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 3.3A (Ta)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V, 75 mOhm @ 3.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA, 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V, 510pF @ 10V
  • Power - Max: 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
Paquete: SC-74, SOT-457
En existencias2.688
Standard
30V, 20V
3.4A (Ta), 3.3A (Ta)
60 mOhm @ 3.4A, 10V, 75 mOhm @ 3.3A, 4.5V
1.5V @ 250µA, 1V @ 250µA
3nC @ 4.5V, 10nC @ 4.5V
235pF @ 15V, 510pF @ 10V
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SC-74, SOT-457
6-TSOP
hot ECH8697R-TL-W
ON Semiconductor

MOSFET 2N-CH 24V 10A SOT-28

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: SOT-28FL/ECH8
Paquete: 8-SMD, Flat Lead
En existencias4.752.000
Logic Level Gate, 2.5V Drive
24V
10A
11.6 mOhm @ 5A, 4.5V
-
6nC @ 4.5V
-
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
SOT-28FL/ECH8
FDS89141
Fairchild/ON Semiconductor

MOSFET 2N-CH 100V 3.5A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 62 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V
  • Power - Max: 1.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias20.046
Logic Level Gate
100V
3.5A
62 mOhm @ 3.5A, 10V
4V @ 250µA
7.1nC @ 10V
398pF @ 50V
1.6W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
UPA1952TE-T1-A
Renesas Electronics Corporation

MOSFET 2P-CH 20V 2A SC95

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Rds On (Max) @ Id, Vgs: 135mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 272pF @ 10V
  • Power - Max: 1.15W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-95
  • Supplier Device Package: SC-95
Paquete: -
Request a Quote
Logic Level Gate, 1.8V Drive
20V
2A (Ta)
135mOhm @ 1A, 4.5V
1.5V @ 1mA
2.3nC @ 4V
272pF @ 10V
1.15W (Ta)
150°C
Surface Mount
SC-95
SC-95
UT6KB5TCR
Rohm Semiconductor

MOSFET 2N-CH 40V 5A HUML2020L8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerUDFN
  • Supplier Device Package: HUML2020L8
Paquete: -
En existencias6.954
-
40V
5A (Ta)
48mOhm @ 5A, 10V
2.5V @ 1mA
3.5nC @ 10V
150pF @ 20V
2W (Ta)
150°C (TJ)
Surface Mount
6-PowerUDFN
HUML2020L8
64-2013PBF
Infineon Technologies

MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
FX205-TL-E-ON
onsemi

MOSFET P-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
FDG6303N_G
onsemi

MOSFET 2N-CH 25V 0.5A SC88

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 500mA
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88 (SC-70-6)
Paquete: -
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Logic Level Gate
25V
500mA
450mOhm @ 500mA, 4.5V
1.5V @ 250µA
2.3nC @ 4.5V
50pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88 (SC-70-6)
BSM300D12P4G101
Rohm Semiconductor

SIC 2N-CH 1200V 291A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 291A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 4.8V @ 145.6mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V
  • Power - Max: 925W (Tc)
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
Paquete: -
En existencias24
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1200V (1.2kV)
291A (Tc)
-
4.8V @ 145.6mA
-
30000pF @ 10V
925W (Tc)
175°C (TJ)
Chassis Mount
Module
Module
EFC4601-M-TR
Sanyo

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
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PJL9802_R2_00001
Panjit International Inc.

MOSFET 2N-CH 30V 5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
  • Power - Max: 1.7W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: -
Request a Quote
-
30V
5A (Ta)
48mOhm @ 5A, 10V
2.1V @ 250µA
5.8nC @ 10V
235pF @ 15V
1.7W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
F415MR12W2M1B76BOMA1
Infineon Technologies

SIC 4N-CH 1200V 75A AG-EASY1B

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 75A, 15V
  • Vgs(th) (Max) @ Id: 5.55V @ 30mA
  • Gate Charge (Qg) (Max) @ Vgs: 186nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 5520pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1B-2
Paquete: -
Request a Quote
-
1200V (1.2kV)
75A (Tj)
15mOhm @ 75A, 15V
5.55V @ 30mA
186nC @ 15V
5520pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-EASY1B-2
DMPH4013SPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
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-
-
-
-
-
-
-
-
-
-
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MSCSM170TLM23C3AG
Microchip Technology

SIC 4N-CH 1700V 124A SP3F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
  • Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
  • Power - Max: 602W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F
Paquete: -
Request a Quote
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1700V (1.7kV)
124A (Tc)
22.5mOhm @ 60A, 20V
3.2V @ 5mA
356nC @ 20V
6600pF @ 1000V
602W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP3F
MSCSM120DUM31CTBL1NG
Microchip Technology

SIC 2N-CH 1200V 79A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 79A
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
  • Power - Max: 310W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
Paquete: -
Request a Quote
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1200V (1.2kV)
79A
31mOhm @ 40A, 20V
2.8V @ 1mA
232nC @ 20V
3020pF @ 1000V
310W
-55°C ~ 175°C (TJ)
Chassis Mount
Module
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