Página 172 - Transistores - FET, MOSFET - Arreglos | Productos semiconductores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Arreglos

Registros 5.684
Página  172/203
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
FW389-TL-2WX
ON Semiconductor

MOSFET N-CH 100V 8SOIC

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias2.576
-
-
-
-
-
-
-
-
-
-
-
-
ECH8649-TL-H
ON Semiconductor

MOSFET 2N-CH 20V 7.5A ECH8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
Paquete: 8-SMD, Flat Lead
En existencias3.376
Logic Level Gate
20V
7.5A
17 mOhm @ 4A, 4.5V
-
10.8nC @ 4.5V
1060pF @ 10V
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
hot SI6973DQ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 4.1A 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.8A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
Paquete: 8-TSSOP (0.173", 4.40mm Width)
En existencias35.604
Logic Level Gate
20V
4.1A
30 mOhm @ 4.8A, 4.5V
450mV @ 250µA (Min)
30nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot SI4622DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 9.6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2458pF @ 15V
  • Power - Max: 3.3W, 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias452.268
Standard
30V
8A
16 mOhm @ 9.6A, 10V
2.5V @ 1mA
60nC @ 10V
2458pF @ 15V
3.3W, 3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI3948DV-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 6-TSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
Paquete: SOT-23-6 Thin, TSOT-23-6
En existencias335.868
Logic Level Gate
30V
-
105 mOhm @ 2.5A, 10V
1V @ 250µA (Min)
3.2nC @ 5V
-
1.15W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
hot VMM650-01F
IXYS

MOSFET 2N-CH 100V 680A Y3-LI

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 680A
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 500A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 30mA
  • Gate Charge (Qg) (Max) @ Vgs: 1440nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Y3-Li
  • Supplier Device Package: Y3-Li
Paquete: Y3-Li
En existencias6.304
Standard
100V
680A
2.2 mOhm @ 500A, 10V
4V @ 30mA
1440nC @ 10V
-
-
-40°C ~ 150°C (TJ)
Chassis Mount
Y3-Li
Y3-Li
TC1550TG-G
Microchip Technology

MOSFET N/P-CH 500V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 60 Ohm @ 50mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 25V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias7.472
Standard
500V
-
60 Ohm @ 50mA, 10V
4V @ 1mA
-
55pF @ 25V
-
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot AON3816
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 4A 8-DFN

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-DFN (2.9x2.3)
Paquete: 8-SMD, Flat Lead
En existencias167.988
Logic Level Gate
20V
-
22 mOhm @ 4A, 4.5V
1.1V @ 250µA
13nC @ 4.5V
1100pF @ 10V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-DFN (2.9x2.3)
DMN1250UFEL-7
Diodes Incorporated

MOSFET BVDSS: 8V 24V U-QFN1515-1

  • FET Type: 8 N-Channel, Common Gate, Common Source
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V
  • Power - Max: 660mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-UFQFN Exposed Pad
  • Supplier Device Package: U-QFN1515-12
Paquete: 12-UFQFN Exposed Pad
En existencias5.760
Standard
12V
2A
450 mOhm @ 200mA, 4.5V
1V @ 250µA
1.9nC @ 4.5V
190pF @ 6V
660mW
-55°C ~ 150°C (TJ)
Surface Mount
12-UFQFN Exposed Pad
U-QFN1515-12
MCQ4559-TP
Micro Commercial Co

N&P-CHANNEL MOSFET, SOP-8 PACKAG

  • FET Type: N and P-Channel
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias4.368
-
60V
4.5A, 3.5A
80 mOhm @ 3.1A, 10V
3V @ 250µA
9nC @ 4.5V
665pF @ 15V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMN3190LDW-13
Diodes Incorporated

MOSFET 2N-CH 30V 1A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1A
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 1.3A, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V
  • Power - Max: 320mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias3.216
Logic Level Gate
30V
1A
190 mOhm @ 1.3A, 10V
2.8V @ 250µA
2nC @ 10V
87pF @ 20V
320mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
ZDM4306NTC
Diodes Incorporated

MOSFET 2N-CH 60V 2A SOT-223-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Power - Max: 3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-223-8
  • Supplier Device Package: SOT-223
Paquete: SOT-223-8
En existencias3.200
Standard
60V
2A
330 mOhm @ 3A, 10V
3V @ 1mA
-
350pF @ 25V
3W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-8
SOT-223
SI5936DU-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 6A PWRPK CHPFET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
  • Power - Max: 10.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? ChipFET? Dual
  • Supplier Device Package: PowerPAK? ChipFet Dual
Paquete: PowerPAK? ChipFET? Dual
En existencias3.616
Logic Level Gate
30V
6A
30 mOhm @ 5A, 10V
2.2V @ 250µA
11nC @ 10V
320pF @ 15V
10.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? ChipFET? Dual
PowerPAK? ChipFet Dual
CJ3139KDW-G
Comchip Technology

MOSFET 2PCH 20V 660MA SOT363

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
  • Rds On (Max) @ Id, Vgs: 520 mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 16V
  • Power - Max: 150mW
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias4.896
Standard
20V
660mA (Ta)
520 mOhm @ 1A, 4.5V
1.1V @ 250µA
-
170pF @ 16V
150mW
-40°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
BUK9K17-60EX
Nexperia USA Inc.

MOSFET 2N-CH 60V 26A 56LFPAK

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 26A
  • Rds On (Max) @ Id, Vgs: 15.6 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2223pF @ 25V
  • Power - Max: 53W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
Paquete: SOT-1205, 8-LFPAK56
En existencias25.728
Logic Level Gate
60V
26A
15.6 mOhm @ 10A, 10V
2.1V @ 1mA
16.5nC @ 5V
2223pF @ 25V
53W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
SI7956DP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 150V 2.6A PPAK SO-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 4.1A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
Paquete: PowerPAK? SO-8 Dual
En existencias238.572
Logic Level Gate
150V
2.6A
105 mOhm @ 4.1A, 10V
4V @ 250µA
26nC @ 10V
-
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
hot SI9926CDY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 8A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias510.372
Logic Level Gate
20V
8A
18 mOhm @ 8.3A, 4.5V
1.5V @ 250µA
33nC @ 10V
1200pF @ 10V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
PMDXB600UNE
Nexperia USA Inc.

MOSFET 2N-CH 20V 0.6A 6DFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 600mA
  • Rds On (Max) @ Id, Vgs: 620 mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
  • Power - Max: 265mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: 6-DFN (1.1x1)
Paquete: 6-XFDFN Exposed Pad
En existencias231.534
Logic Level Gate
20V
600mA
620 mOhm @ 600mA, 4.5V
950mV @ 250µA
0.7nC @ 4.5V
21.3pF @ 10V
265mW
-55°C ~ 150°C (TJ)
Surface Mount
6-XFDFN Exposed Pad
6-DFN (1.1x1)
PSMN013-40VLDX
Nexperia USA Inc.

MOSFET 2N-CH 40V 42A LFPAK56D

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
  • Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
  • Power - Max: 46W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
Paquete: -
En existencias17.955
-
40V
42A (Ta)
13.6mOhm @ 10A, 10V
2.2V @ 1mA
19.4nC @ 10V
1160pF @ 25V
46W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
AO4614BL_DELTA
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 40V 6A/5A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V, 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V, 1175pF @ 20V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paquete: -
Request a Quote
-
40V
6A (Ta), 5A (Ta)
30mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
3V @ 250µA
10.8nC @ 10V, 22nC @ 10V
650pF @ 20V, 1175pF @ 20V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SI3139KDW-TP
Micro Commercial Co

MOSFET 2P-CH 20V 0.66A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 660mA
  • Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
  • Power - Max: 150mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paquete: -
Request a Quote
-
20V
660mA
520mOhm @ 1A, 4.5V
1.1V @ 250µA
-
175pF @ 16V
150mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMP31D7LDW-13
Diodes Incorporated

MOSFET 2P-CH 0.55A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paquete: -
En existencias30.000
-
-
550mA (Ta)
900mOhm @ 420mA, 10V
2.6V @ 250µA
-
-
-
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
CAB011A12GM3
Wolfspeed, Inc.

SIC, MODULE, 11M, 1200V, 48 MM,

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 141A (Tj)
  • Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V
  • Vgs(th) (Max) @ Id: 3.9V @ 34mA
  • Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V
  • Power - Max: 10mW
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
Paquete: -
Request a Quote
-
1200V (1.2kV)
141A (Tj)
13.9mOhm @ 150A, 15V
3.9V @ 34mA
354nC @ 15V
11000pF @ 1000V
10mW
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
MSCMC120AM03CT6LIAG
Microchip Technology

SIC 2N-CH 1200V 631A SP6C LI

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 631A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4mOhm @ 500A, 20V
  • Vgs(th) (Max) @ Id: 4V @ 150mA
  • Gate Charge (Qg) (Max) @ Vgs: 1610nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 27900pF @ 1000V
  • Power - Max: 2778W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6C LI
Paquete: -
Request a Quote
-
1200V (1.2kV)
631A (Tc)
3.4mOhm @ 500A, 20V
4V @ 150mA
1610nC @ 20V
27900pF @ 1000V
2778W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP6C LI
RJK03P7DPA-00-J5A
Renesas Electronics Corporation

MOSFET 2N-CH 30V 15A/30A 8WPAK

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A, 30A
  • Rds On (Max) @ Id, Vgs: 9.4mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
  • Power - Max: 10W, 20W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-WPAK
Paquete: -
Request a Quote
Logic Level Gate, 4.5V Drive
30V
15A, 30A
9.4mOhm @ 7.5A, 10V
-
7.1nC @ 4.5V
1190pF @ 10V
10W, 20W
150°C (TJ)
Surface Mount
8-WFDFN Exposed Pad
8-WPAK
SIZF906ADT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 27A 8POWERPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
  • Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (6x5)
Paquete: -
Request a Quote
-
30V
27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)
3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
2.2V @ 250µA
49nC @ 10V, 200nC @ 10V
2000pF @ 15V, 8200pF @ 15V
4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (6x5)
UT6MA2TCR
Rohm Semiconductor

MOSFET N/P-CH 30V 4A HUML2020L8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V, 6.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 305pF @ 15V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerUDFN
  • Supplier Device Package: HUML2020L8
Paquete: -
En existencias98.130
-
30V
4A (Ta)
46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V
2.5V @ 1mA
4.3nC @ 10V, 6.7nC @ 10V
180pF @ 15V, 305pF @ 15V
2W (Ta)
150°C (TJ)
Surface Mount
6-PowerUDFN
HUML2020L8
DMN1003UCA6-7
Diodes Incorporated

MOSFET 2N-CH X3-DSN3518-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3315pF @ 6V
  • Power - Max: 2.67W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: X3-DSN3518-6
Paquete: -
En existencias9.000
-
-
-
-
1.3V @ 1mA
56.5nC @ 4.5V
3315pF @ 6V
2.67W
-55°C ~ 150°C (TJ)
Surface Mount
6-SMD, No Lead
X3-DSN3518-6