Transistores - FET, MOSFET - Arreglos

SI4310BDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 7.5A 14SOIC

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 7.5A, 9.8A
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 15V
• Power - Max: 1.14W, 1.47W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 14-SOIC

Paquete: 14-SOIC (0.154", 3.90mm Width)

APTM20AM05FTG

Microsemi Corporation

MOSFET 2N-CH 200V 333A SP4

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 333A
• Rds On (Max) @ Id, Vgs: 5 mOhm @ 166.5A, 10V
• Vgs(th) (Max) @ Id: 4V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 1184nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 40800pF @ 25V
• Power - Max: 1250W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Supplier Device Package: SP4

Paquete: SP4

SI4569DY-T1-E3

Vishay Siliconix

MOSFET N/P-CH 40V 7.6A 8-SOIC

• FET Type: N and P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 7.6A, 7.9A
• Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V
• Power - Max: 3.1W, 3.2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

Paquete: 8-SOIC (0.154", 3.90mm Width)

FDC6000NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 7.3A 6SSOT

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 7.3A
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.5A, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
• Power - Max: 1.2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP
• Supplier Device Package: SuperSOT?-6 FLMP

Paquete: 6-SSOT Flat-lead, SuperSOT?-6 FLMP

NTHD4401PT3G

ON Semiconductor

MOSFET 2P-CH 20V 2.1A CHIPFET

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.1A
• Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
• Power - Max: 1.1W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: ChipFET?

Paquete: 8-SMD, Flat Lead

APTC90H12SCTG

Microsemi Corporation

MOSFET 4N-CH 900V 30A SP4

• FET Type: 4 N-Channel (H-Bridge)
• FET Feature: Super Junction
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 30A
• Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
• Power - Max: 250W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Supplier Device Package: SP4

Paquete: SP4

FMM110-015X2F

IXYS

MOSFET 2N-CH 150V 53A I4-PAC

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 53A
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 55A, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
• Power - Max: 180W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: i4-Pac?-5
• Supplier Device Package: ISOPLUS i4-PAC?

Paquete: i4-Pac?-5

ALD1101BPAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

• FET Type: 2 N-Channel (Dual) Matched Pair
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 10.6V
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: 75 Ohm @ 5V
• Vgs(th) (Max) @ Id: 1V @ 10µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 500mW
• Operating Temperature: 0°C ~ 70°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-PDIP

Paquete: 8-DIP (0.300", 7.62mm)

TC6215TG-G

Microchip Technology

MOSFET N/P-CH 150V 8SOIC

• FET Type: N and P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: 4 Ohm @ 2A, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
• Power - Max: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

Paquete: 8-SOIC (0.154", 3.90mm Width)

NVMFD5873NLT1G

ON Semiconductor

MOSFET 2N-CH 60V 10A SO8FL

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 10A
• Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V
• Power - Max: 3.1W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

Paquete: 8-PowerTDFN

DMC3016LDV-7

Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI333

• FET Type: N and P-Channel Complementary
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V
• Power - Max: 900mW (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PowerDI3333-8

Paquete: 8-PowerVDFN

EFC2J003NUZTCG

ON Semiconductor

MOSFET N-CH 12V DUAL WLCSP6

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

DMN33D8LDW-7

Diodes Incorporated

MOSFET 2N-CH 30V 0.25A

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 250mA
• Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
• Vgs(th) (Max) @ Id: 1.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
• Power - Max: 350mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

Paquete: 6-TSSOP, SC-88, SOT-363

BSZ15DC02KDHXTMA1

Infineon Technologies

MOSFET N/P-CH 20V 8TDSON

• FET Type: N and P-Channel Complementary
• FET Feature: Logic Level Gate, 2.5V Drive
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
• Rds On (Max) @ Id, Vgs: 55 mOhm @ 5.1A, 4.5V
• Vgs(th) (Max) @ Id: 1.4V @ 110µA
• Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
• Power - Max: 2.5W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: PG-TSDSON-8-FL

Paquete: 8-PowerTDFN

DMN2008LFU-7

Diodes Incorporated

MOSFET 2N-CHA 20V 14.5A DFN2030

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 14.5A
• Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 5.5A, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250A
• Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
• Power - Max: 1W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-UFDFN Exposed Pad
• Supplier Device Package: U-DFN2030-6 (Type B)

Paquete: 6-UFDFN Exposed Pad

SI4816BDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 5.8A 8-SOIC

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
• Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 6.8A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 1W, 1.25W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

Paquete: 8-SOIC (0.154", 3.90mm Width)

SI7997DP-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 30V 60A PPAK SO-8

• FET Type: 2 P-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 60A
• Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V
• Power - Max: 46W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: PowerPAK? SO-8 Dual
• Supplier Device Package: PowerPAK? SO-8 Dual

Paquete: PowerPAK? SO-8 Dual

CCB032M12FM3

Wolfspeed, Inc.

SIC 6N-CH 1200V 40A MODULE

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 40A
• Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
• Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
• Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

Paquete: -

HT8KE5TB1

Rohm Semiconductor

MOSFET 2N-CH 100V 2.5A/7A 8HSMT

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc)
• Rds On (Max) @ Id, Vgs: 193mOhm @ 2.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
• Power - Max: 2W (Ta), 13W (Tc)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: 8-HSMT (3.2x3)

Paquete: -

DMC1028UVT-7

Diodes Incorporated

MOSFET N/P-CH 12V 6.1A TSOT26

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 12V, 20V
• Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta)
• Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V
• Power - Max: 800mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: TSOT-26

Paquete: -

SQ4532AEY-T1_GE3

Vishay Siliconix

MOSFET N/P-CH 30V 7.3A 8SOIC

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
• Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
• Power - Max: 3.3W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

Paquete: -

GSFB0305

Good-Ark Semiconductor

MOSFET 2P-CH 30V 4.2A/8A 6PPAK

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 8A (Tc)
• Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
• Power - Max: 1.9W (Ta), 7.4W (Tc)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-WDFN Exposed Pad
• Supplier Device Package: 6-PPAK (2x2)

Paquete: -

SSM6L36TU-LF

Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.5A UF6

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate, 1.5V Drive
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 330mA (Ta)
• Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V, 1.2nC @ 4V
• Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V, 43pF @ 10V
• Power - Max: 500mW (Ta)
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, Flat Leads
• Supplier Device Package: UF6

Paquete: -

SCH2602-TL-E

onsemi

PCH+NCH 2.5V DRIVE SERIES

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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NTMFD5C674NLT1G

onsemi

MOSFET 2N-CH 60V 11A/42A 8DFN

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
• Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
• Power - Max: 3W (Ta), 37W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

Paquete: -

AO4606

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 6A/6.5A 8SOIC

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 6.5A (Ta)
• Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 28mOhm @ 6.5A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, 16nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 760pF @ 15V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

Paquete: -

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2N7002DW-7-F-79

Diodes Incorporated

MOSFET 2N-CH 60V SOT-363

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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ECH8661-TL-HX

onsemi

MOSFET

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

Request a Quote