Transistores - Bipolar (BJT) - RF

BFP 620F E7764

Infineon Technologies

TRANSISTOR RF NPN 2.3V TSFP-4

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 2.8V
• Frequency - Transition: 65GHz
• Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
• Gain: 21dB
• Power - Max: 185mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
• Current - Collector (Ic) (Max): 80mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Flat Leads
• Supplier Device Package: 4-TSFP

Paquete: 4-SMD, Flat Leads

BFS17SE6327HTSA1

Infineon Technologies

DUAL NPN TRANS RADIO FREQ BROAD

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 1.4GHz
• Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 800MHz
• Gain: -
• Power - Max: 280mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
• Current - Collector (Ic) (Max): 25mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

Paquete: 6-VSSOP, SC-88, SOT-363

MS1579

Microsemi Corporation

TRANS RF BIPO 65W 5.2A M156

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 25V
• Frequency - Transition: 470MHz ~ 860MHz
• Noise Figure (dB Typ @ f): -
• Gain: 8.5dB
• Power - Max: 65W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 20V
• Current - Collector (Ic) (Max): 5.2A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: M156
• Supplier Device Package: M156

Paquete: M156

NE678M04-T2-A

CEL

RF TRANSISTOR NPN SOT-343F

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 6V
• Frequency - Transition: 12GHz
• Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
• Gain: 13.5dB
• Power - Max: 205mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
• Current - Collector (Ic) (Max): 100mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Supplier Device Package: SOT-343F

Paquete: SOT-343F

NE662M04-T2-A

CEL

RF TRANSISTOR NPN SOT-343F

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 3.3V
• Frequency - Transition: 25GHz
• Noise Figure (dB Typ @ f): 1.1dB @ 2GHz
• Gain: 18dB
• Power - Max: 115mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2V
• Current - Collector (Ic) (Max): 35mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Supplier Device Package: SOT-343F

Paquete: SOT-343F

2SC5277A-2-TL-E

ON Semiconductor

TRANS NPN BIPO 30MA 10V SMCP

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 1.4dB ~ 0.9dB @ 1.5GHz ~ 1GHz
• Gain: 10dB ~ 5.5dB @ 1.5GHz
• Power - Max: 100mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 5V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SMCP

Paquete: SC-75, SOT-416

START499ETR

STMicroelectronics

TRANS RF SILICON NPN SOT-343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 4.5V
• Frequency - Transition: 1.9GHz
• Noise Figure (dB Typ @ f): 3.3dB @ 1.8GHz
• Gain: 15dB
• Power - Max: 600mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 160mA, 4V
• Current - Collector (Ic) (Max): 600mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: SOT-343

Paquete: SC-82A, SOT-343

BLS3135-50,114

NXP

TRANSISTOR RF POWER SOT422A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 75V
• Frequency - Transition: 3.5GHz
• Noise Figure (dB Typ @ f): -
• Gain: 8dB
• Power - Max: 80W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
• Current - Collector (Ic) (Max): 6A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-422A
• Supplier Device Package: CDFM2

Paquete: SOT-422A

BFS17,215

NXP

TRANS NPN 25MA 15V 1GHZ SOT23

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 1GHz
• Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
• Gain: -
• Power - Max: 300mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
• Current - Collector (Ic) (Max): 25mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

Paquete: TO-236-3, SC-59, SOT-23-3

BFG410W,115

NXP

TRANS NPN 4.5V 22GHZ SOT343R

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 4.5V
• Frequency - Transition: 22GHz
• Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz
• Gain: 21dB
• Power - Max: 54mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V
• Current - Collector (Ic) (Max): 12mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: CMPAK-4

Paquete: SC-82A, SOT-343

PRF957,115

NXP

TRANSISTOR SOT323

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 8.5GHz
• Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz
• Gain: -
• Power - Max: 270mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
• Current - Collector (Ic) (Max): 100mA
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323-3

Paquete: SC-70, SOT-323

BFG198,115

NXP

TRANS NPN 10V 8GHZ SC73

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 1W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
• Current - Collector (Ic) (Max): 100mA
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

Paquete: TO-261-4, TO-261AA

BFG10/X,215

NXP

TRANS RF NPN 2GHZ 8V SOT143

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 8V
• Frequency - Transition: 1.9GHz
• Noise Figure (dB Typ @ f): -
• Gain: 7dB
• Power - Max: 400mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
• Current - Collector (Ic) (Max): 250mA
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: SOT-143B

Paquete: TO-253-4, TO-253AA

1214-110M

Microsemi Corporation

TRANS RF BIPO 270W 8A 55KT1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 75V
• Frequency - Transition: 1.2GHz ~ 1.4GHz
• Noise Figure (dB Typ @ f): -
• Gain: 7.4dB
• Power - Max: 270W
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): 8A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 55KT
• Supplier Device Package: 55KT

Paquete: 55KT

2224-6L

Microsemi Corporation

TRANS RF BIPO 22W 1.25A 55LV1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 40V
• Frequency - Transition: 2.2GHz ~ 2.4GHz
• Noise Figure (dB Typ @ f): -
• Gain: 7dB
• Power - Max: 22W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
• Current - Collector (Ic) (Max): 1.25A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 55LV
• Supplier Device Package: 55LV

Paquete: 55LV

TPR400

Microsemi Corporation

TRANS RF BIPO 875W 30A 55CX1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 55V
• Frequency - Transition: 1.03GHz ~ 1.09GHz
• Noise Figure (dB Typ @ f): -
• Gain: 7.27dB
• Power - Max: 875W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2.5A, 5V
• Current - Collector (Ic) (Max): 30A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 55CX
• Supplier Device Package: 55CX

Paquete: 55CX

2SC3583-T1B-A

CEL

RF TRANSISTOR NPN SOT-23

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 9GHz
• Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
• Gain: 13dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
• Current - Collector (Ic) (Max): 65mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

Paquete: TO-236-3, SC-59, SOT-23-3

2SC5415AF-TD-E

ON Semiconductor

TRANS NPN BIPO 0.1A 12V

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 6.7GHz
• Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
• Gain: 9dB
• Power - Max: 800mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
• Current - Collector (Ic) (Max): 100mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: PCP

Paquete: TO-243AA

2SC5245A-4-TL-E

ON Semiconductor

TRANS NPN BIPO UHF-LNA MCP

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 0.9dB ~ 3dB @ 1GHz ~ 1.5GHz
• Gain: 10dB
• Power - Max: 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 5V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: 3-MCP

Paquete: SC-70, SOT-323

AT-32033-TR2G

Broadcom Limited

TRANS NPN BIPO 5.5V 32MA SOT-23

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 5.5V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
• Gain: 11dB ~ 12.5dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V
• Current - Collector (Ic) (Max): 32mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

Paquete: TO-236-3, SC-59, SOT-23-3

2SC24040DL

Panasonic Electronic Components

TRANS NPN 20VCEO 15MA MINI-3

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 20V
• Frequency - Transition: 650MHz
• Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
• Gain: 24dB
• Power - Max: 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
• Current - Collector (Ic) (Max): 15mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: Mini3-G1

Paquete: TO-236-3, SC-59, SOT-23-3

BFP620FH7764XTSA1

Infineon Technologies

TRANS RF NPN 2.8V 80MA 4TSFP

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 2.8V
• Frequency - Transition: 65GHz
• Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
• Gain: 21dB ~ 10dB
• Power - Max: 185mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
• Current - Collector (Ic) (Max): 80mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Flat Leads
• Supplier Device Package: 4-TSFP

Paquete: 4-SMD, Flat Leads

BFP740H6327XTSA1

Infineon Technologies

TRANS RF NPN 42GHZ 4.7V SOT343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 4.7V
• Frequency - Transition: 42GHz
• Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
• Gain: 27dB
• Power - Max: 160mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: SOT-343

Paquete: SC-82A, SOT-343

SD1536-01

Microsemi Corporation

RF POWER TRANSISTOR

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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NSVF4015SG4T1G

onsemi

RF TRANS NPN 12V 10GHZ SC82FL/

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 10GHz
• Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
• Gain: 17dB
• Power - Max: 450mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
• Current - Collector (Ic) (Max): 100mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Flat Leads
• Supplier Device Package: SC-82FL/MCPH4

Paquete: -

2SC5011-A

CEL

RF TRANS NPN 12V 6.5GHZ SOT343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 6.5GHz
• Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
• Gain: 13dB
• Power - Max: 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
• Current - Collector (Ic) (Max): 100mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: -

Paquete: -

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2SC3127ID-TL-E

Renesas Electronics Corporation

RF 0.05A, NPN

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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SD1802-01

Microsemi Corporation

TRANSISTOR

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

Request a Quote