Transistores - Bipolar (BJT) - RF

BFP 720FESD E6327

Infineon Technologies

TRANS RF NPN 45GHZ 4.7V TSFP4

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 4.7V
• Frequency - Transition: 45GHz
• Noise Figure (dB Typ @ f): 0.5dB ~ 1.3dB @ 150MHz ~ 10GHz
• Gain: 10dB ~ 29dB
• Power - Max: 100mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 15mA, 3V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Flat Leads
• Supplier Device Package: 4-TSFP

Paquete: 4-SMD, Flat Leads

BF776E6327FTSA1

Infineon Technologies

TRANS RF NPN 1.8GHZ 4.0V SOT343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 4.7V
• Frequency - Transition: 46GHz
• Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz
• Gain: 24dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 30mA, 3V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

Paquete: SC-82A, SOT-343

BFP193WE6327HTSA1

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
• Gain: 13.5dB ~ 20.5dB
• Power - Max: 580mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
• Current - Collector (Ic) (Max): 80mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

Paquete: SC-82A, SOT-343

MRF8372R2

Microsemi Corporation

TRANS NPN 16V 200MA SO8

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 16V
• Frequency - Transition: 870MHz
• Noise Figure (dB Typ @ f): -
• Gain: 8dB ~ 9.5dB
• Power - Max: 2.2W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
• Current - Collector (Ic) (Max): 200mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

Paquete: 8-SOIC (0.154", 3.90mm Width)

2SC5088-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 500MHZ USQ

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 7GHz
• Noise Figure (dB Typ @ f): 1dB @ 500MHz
• Gain: 18dB
• Power - Max: 100mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
• Current - Collector (Ic) (Max): 80mA
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: USQ

Paquete: SC-82A, SOT-343

UTV010

Microsemi Corporation

TRANS RF BIPO 15W 1.25A 55FT-5

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 24V
• Frequency - Transition: 470MHz ~ 860MHz
• Noise Figure (dB Typ @ f): -
• Gain: 11.5dB
• Power - Max: 15W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
• Current - Collector (Ic) (Max): 1.25A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis, Stud Mount
• Package / Case: 55FT
• Supplier Device Package: 55FT

Paquete: 55FT

HFA3096B96

Intersil

IC TRANS ARRAY NPN/PNP 16-SOIC

• Transistor Type: 3 NPN + 2 PNP
• Voltage - Collector Emitter Breakdown (Max): 12V, 15V
• Frequency - Transition: 8GHz, 5.5GHz
• Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
• Gain: -
• Power - Max: 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V
• Current - Collector (Ic) (Max): 65mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

Paquete: 16-SOIC (0.154", 3.90mm Width)

2N5770_D27Z

Fairchild/ON Semiconductor

TRANSISTOR RF NPN 15V 50MA TO-92

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): 6dB @ 60MHz
• Gain: 15dB
• Power - Max: 350mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3

Paquete: TO-226-3, TO-92-3 (TO-226AA)

NE678M04-A

CEL

RF TRANSISTOR NPN SOT-343F

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 6V
• Frequency - Transition: 12GHz
• Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
• Gain: 13.5dB
• Power - Max: 205mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
• Current - Collector (Ic) (Max): 100mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Supplier Device Package: SOT-343F

Paquete: SOT-343F

BFG25A/X,215

NXP

TRANS NPN 5V 5GHZ SOT143B

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 5V
• Frequency - Transition: 5GHz
• Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz
• Gain: -
• Power - Max: 32mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V
• Current - Collector (Ic) (Max): 6.5mA
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: SOT-143B

Paquete: TO-253-4, TO-253AA

1002MP

Microsemi Corporation

TRANS RF BIPO 7W 250MA 55FW1

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): 50V
• Frequency - Transition: 960MHz ~ 1.215GHz
• Noise Figure (dB Typ @ f): -
• Gain: 8.24dB ~ 11dB
• Power - Max: 7W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
• Current - Collector (Ic) (Max): 250mA
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 55FW-1
• Supplier Device Package: 55FW-1

Paquete: 55FW-1

SD1224-02

Microsemi Corporation

TRANS RF BIPO 60W 5A M113

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 35V
• Frequency - Transition: 175MHz
• Noise Figure (dB Typ @ f): -
• Gain: 7.6dB
• Power - Max: 60W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
• Current - Collector (Ic) (Max): 5A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: M113
• Supplier Device Package: M113

Paquete: M113

MAX2601ESA+T

Maxim Integrated

TRANS RF NPN 900MHZ 15V 8SOIC

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 1GHz
• Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
• Gain: 11.6dB
• Power - Max: 6.4W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
• Current - Collector (Ic) (Max): 1.2A
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: 8-SOIC-EP

Paquete: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

AT-31033-TR1G

Broadcom Limited

TRANS NPN BIPO 5.5V 16MA SOT-23

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 5.5V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz
• Gain: 9dB ~ 11dB
• Power - Max: 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
• Current - Collector (Ic) (Max): 16mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

Paquete: TO-236-3, SC-59, SOT-23-3

BFU550WF

NXP

TRANS RF NPN 12V 50MA SOT-323

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 11GHz
• Noise Figure (dB Typ @ f): 1.3dB @ 1.8GHz
• Gain: 12dB
• Power - Max: 450mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323-3

Paquete: SC-70, SOT-323

55GN01FA-TL-H

ON Semiconductor

TRANS NPN BIPO 70MA 10V SSFP

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 4.5GHz ~ 5.5GHz
• Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
• Gain: 11dB ~ 19dB @ 1GHz ~ 400MHz
• Power - Max: 250mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
• Current - Collector (Ic) (Max): 70mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-81
• Supplier Device Package: 3-SSFP

Paquete: SC-81

MRF1090MB

M/A-Com Technology Solutions

TRANS NPN 90W 960MHZ-1215MHZ

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 70V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: 10.8dB
• Power - Max: 90W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2.5A, 5V
• Current - Collector (Ic) (Max): 6A
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: 332A-03
• Supplier Device Package: 332A-03, Style 1

Paquete: 332A-03

MRF10120

M/A-Com Technology Solutions

TRANS NPN 120W 960MHZ-1215MHZ

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 55V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: 8.5dB
• Power - Max: 120W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
• Current - Collector (Ic) (Max): 15A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 355C-02
• Supplier Device Package: 355C-02, Style 1

Paquete: 355C-02

BFU580QX

NXP

TRANS RF NPN 12V 60MA SOT89-3

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 10.5GHz
• Noise Figure (dB Typ @ f): 1.3dB @ 1.8GHz
• Gain: 8.5dB
• Power - Max: 1W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 30mA, 8V
• Current - Collector (Ic) (Max): 60mA
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

Paquete: TO-243AA

2SC563200L

Panasonic Electronic Components

TRANS NPN 8VCEO 50MA S-MINI 3P

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 8V
• Frequency - Transition: 1.1GHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 4V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SMini3-G1

Paquete: SC-70, SOT-323

MMBTH10-7-F

Diodes Incorporated

TRANS NPN VHF/UHF 25V SOT23-3

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 25V
• Frequency - Transition: 650MHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 300mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

Paquete: TO-236-3, SC-59, SOT-23-3

BF771E6765N

Infineon Technologies

RF TRANSISTOR, NPN

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
• Gain: 15dB
• Power - Max: 580mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
• Current - Collector (Ic) (Max): 80mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3-4

Paquete: -

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MRF587

MACOM Technology Solutions

TRANS RF NPN 17A 200MA 244A-01

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 17V
• Frequency - Transition: 5.5GHz
• Noise Figure (dB Typ @ f): 3dB @ 0.5GHz
• Gain: 13dB
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
• Current - Collector (Ic) (Max): 200mA
• Operating Temperature: 200°C (TJ)
• Mounting Type: Stud Mount
• Package / Case: 244A-01
• Supplier Device Package: 244A-01, STYLE 1

Paquete: -

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2N3866-TIN-LEAD

Central Semiconductor Corp

RF TRANS NPN 30V 500MHZ TO39

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 30V
• Frequency - Transition: 500MHz
• Noise Figure (dB Typ @ f): -
• Gain: 10dB
• Power - Max: 5W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
• Current - Collector (Ic) (Max): 400mA
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-205AD, TO-39-3 Metal Can
• Supplier Device Package: TO-39

Paquete: -

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HSG2001VF-01TL-E

Renesas Electronics Corporation

NPN HIGH FREQPOWER AMP

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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MS2348

Microsemi Corporation

RF POWER TRANSISTOR

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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2SC3776D

Sanyo

NPN EPITAXIAL PLANAR SILICON

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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MZ0912B50Y

Ampleon USA Inc.

RF POWER BIPOLAR TRANSISTOR, 1-E

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 20V
• Frequency - Transition: 1.215GHz
• Noise Figure (dB Typ @ f): -
• Gain: 8dB
• Power - Max: 150W
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): 3A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-443A
• Supplier Device Package: SOT443A

Paquete: -

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