Diodos - Rectificadores
- Simple

GP02-35HM3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 3.5KV 250MA DO204

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 3500V
• Current - Average Rectified (Io): 250mA
• Voltage - Forward (Vf) (Max) @ If: 3V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 5µA @ 3500V
• Capacitance @ Vr, F: 3pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-204AL, DO-41, Axial

NUR460P/L04U

WeEn Semiconductors

DIODE GEN PURP 600V 4A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: 175°C (Max)

Paquete: DO-201AD, Axial

8EWS08STRR

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 8A DPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-PAK (TO-252AA)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

ISOPAC0112

Semtech Corporation

DIODE GEN PURP 600V 15A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2000ns
• Current - Reverse Leakage @ Vr: 1µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: -

1N3288AR

Powerex Inc.

DIODE GEN PURP 100V 100A DO205AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 100A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 24mA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AA, DO-8, Stud
• Supplier Device Package: DO-205AA (DO-8)
• Operating Temperature - Junction: -40°C ~ 200°C

Paquete: DO-205AA, DO-8, Stud

HSM390J/TR13

Microsemi Corporation

DIODE SCHOTTKY 90V 3A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 810mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 90V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: DO-214AB, SMC

GI1401HE3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 8A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: TO-220-2

SR1203 A0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 12A,

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 12A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -50°C ~ 150°C

Paquete: DO-201AD, Axial

NRVHPD660T4G

ON Semiconductor

DIODE GEN PURP 600V 6A DPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 3V @ 6A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 30µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: DPAK
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

NSR10F30NXT5G

ON Semiconductor

DIODE SCHOTTKY 30V 1A 2DSN

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 1A (DC)
• Voltage - Forward (Vf) (Max) @ If: 470mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 2-XDFN
• Supplier Device Package: 2-DSN (1.4x0.6)
• Operating Temperature - Junction: 150°C (Max)

Paquete: 2-XDFN

ES1CL RHG

TSC America Inc.

DIODE, SUPER FAST, 1A, 150V, 35N

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 5µA @ 150V
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-219AB

SRT15 R0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 5

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: TS-1
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: T-18, Axial

V35PWM10-M3/I

Vishay Semiconductor Diodes Division

RECT SCHKY 35A 100V SLIMDPAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 35A
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 35A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 800µA @ 100V
• Capacitance @ Vr, F: 2500pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: SlimDPAK
• Operating Temperature - Junction: -40°C ~ 175°C

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

RR264MM-400TR

Rohm Semiconductor

DIODE GEN PURP 400V 1A PMDU

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 700mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: PMDU
• Operating Temperature - Junction: 150°C (Max)

Paquete: SOD-123F

MMBD4148_D87Z

Fairchild/ON Semiconductor

DIODE GEN PURP 100V 200MA SOT23

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 5µA @ 75V
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• Operating Temperature - Junction: 150°C (Max)

Paquete: TO-236-3, SC-59, SOT-23-3

1N5400-TP

Micro Commercial Co

DIODE GEN PURP 50V 3A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-201AD, Axial

DFLS1200-7

Diodes Incorporated

DIODE SCHOTTKY 200V POWERDI123

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2µA @ 200V
• Capacitance @ Vr, F: 23pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: POWERDI?123
• Supplier Device Package: PowerDI? 123
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: POWERDI?123

MSASC25H15KS-TR

Microchip Technology

DIODE POWER SCHOTTKY

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -

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SICPT30120-BP

Micro Commercial Co

Interface

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
• Capacitance @ Vr, F: 2259pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247AD
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: -

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R21160

Microchip Technology

RECTIFIER

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 1600 V
• Current - Average Rectified (Io): 22A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-4 (DO-203AA)
• Operating Temperature - Junction: -65°C ~ 200°C

Paquete: -

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VS-30ETH06S-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 30A TO263AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 50 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: -

CR5-010-TR

Central Semiconductor Corp

DIODE GEN PURP 100V 5A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 5 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 100 V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: -

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VS-65APS12LHM3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 65A TO247AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 65A
• Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 65 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-247AD (TO-3P)
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: -

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1N4944-TP

Micro Commercial Co

DIODE GEN PURP 400V 1A DO41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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SS54C-HF

Comchip Technology

DIODE SCHOTTKY 40V 5A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 mA @ 40 V
• Capacitance @ Vr, F: 600pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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UT261

Microchip Technology

DIODE GEN PURP 100V 2A A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: A, Axial
• Supplier Device Package: A, Axial
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: -

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1N5616US-TR

Microchip Technology

DIODE GEN PURP 400V 1A D-5A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2 µs
• Current - Reverse Leakage @ Vr: 500 nA @ 400 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: D-5A
• Operating Temperature - Junction: -65°C ~ 200°C

Paquete: -

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PMEG2010EA-QF

Nexperia USA Inc.

PMEG2010EA-Q/SOD323/SOD2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 µA @ 15 V
• Capacitance @ Vr, F: 19pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323
• Operating Temperature - Junction: 125°C

Paquete: -

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