Diodos - Rectificadores
- Simple

BY399P-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 3A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 10µA @ 800V
• Capacitance @ Vr, F: 28pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -50°C ~ 125°C

Paquete: DO-201AD, Axial

LSM845JE3

Microsemi Corporation

DIODE SCHOTTKY 45V 8A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 520mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-214AB, SMC

80EPS08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 80A TO247AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 80A
• Voltage - Forward (Vf) (Max) @ If: 1.17V @ 80A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: TO-247-3

A399M

Powerex Inc.

DIODE FAST 400A 600V DO-200AA

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -

DMA10I1600PA

IXYS

DIODE GEN PURP 1600V 10A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.26V @ 10A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 1600V
• Capacitance @ Vr, F: 4pF @ 400V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: TO-220-2

SF65G B0G

TSC America Inc.

DIODE, SUPER FAST, 6A, 300V, 35N

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 5µA @ 300V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-201AD, Axial

AS01V

Sanken

DIODE GEN PURP 400V 600MA AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 600mA
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 600mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5µs
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: Axial

UF1007-E3/54

Vishay Semiconductor Diodes Division

DIODE 1A 1000V 75NS DO-41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 10µA @ 1000V
• Capacitance @ Vr, F: 17pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-204AL, DO-41, Axial

HS3MB M4G

TSC America Inc.

DIODE, HIGH EFFICIENT, 3A, 1000V

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 10µA @ 1000V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-214AA, SMB

HS2D M4G

TSC America Inc.

DIODE, HIGH EFFICIENT, 2A, 200V,

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-214AA, SMB

RS1GL RUG

TSC America Inc.

DIODE, FAST, 0.8A, 400V, 150NS,

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 800mA
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-219AB

LL46-GS08

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 150MA SOD80

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 150mA
• Voltage - Forward (Vf) (Max) @ If: 1V @ 250mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 75V
• Capacitance @ Vr, F: 10pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80 MiniMELF
• Operating Temperature - Junction: 125°C (Max)

Paquete: DO-213AC, MINI-MELF, SOD-80

B245AE-13

Diodes Incorporated

SCHOTTKY RECTIFIER SMA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 45V
• Capacitance @ Vr, F: 93pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-214AC, SMA

LS103A-GS18

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 15A SOD80

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 10ns
• Current - Reverse Leakage @ Vr: 5µA @ 30V
• Capacitance @ Vr, F: 50pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: SOD-80 QuadroMELF
• Operating Temperature - Junction: 125°C (Max)

Paquete: SOD-80 Variant

C3D10170H

Cree/Wolfspeed

DIODE SCHOTTKY 1.7KV 14.4A TO247

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1700V
• Current - Average Rectified (Io): 14.4A (DC)
• Voltage - Forward (Vf) (Max) @ If: 2V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 60µA @ 1700V
• Capacitance @ Vr, F: 827pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: TO-247-2

NTE6115

NTE Electronics, Inc

DIODE GP 1.2KV 1625A DO200AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 1625A
• Voltage - Forward (Vf) (Max) @ If: 1.93 V @ 3770 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: DO-200AB
• Operating Temperature - Junction: -30°C ~ 175°C

Paquete: -

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S31100

Microchip Technology

STD RECTIFIER

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -

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NRVBM2H100T3G-OD

onsemi

DIODE SCHOTTKY 100V 2A POWERMITE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: Powermite
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: -

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1N6643U-TR

Microchip Technology

DIODE GP 75V 300MA SQ-MELF B

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 75 V
• Current - Average Rectified (Io): 300mA
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 6 ns
• Current - Reverse Leakage @ Vr: 500 nA @ 50 V
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: B, SQ-MELF
• Operating Temperature - Junction: -65°C ~ 200°C

Paquete: -

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1N4148W-TP-HF

Micro Commercial Co

Interface

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 150mA
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 75 V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: -

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CMR3U-02M-BK-PBFREE

Central Semiconductor Corp

DIODE GEN PURP 200V 3A SMB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: -

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MSASC25H45KV

Microchip Technology

DIODE SCHOTTKY 45V 25A THINKEY2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 610 mV @ 20 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 mA @ 45 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: ThinKey™2
• Supplier Device Package: ThinKey™2
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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TUAR4DH

Taiwan Semiconductor Corporation

150NS, 4A, 200V, FAST RECOVERY R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 31pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: SMPC4.6U
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

GS2008HE_R1_00001

Panjit International Inc.

DIODE GEN PURP 800V 2A SOD123HE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 800 V
• Capacitance @ Vr, F: 12pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123H
• Supplier Device Package: SOD-123HE
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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STB30100

SMC Diode Solutions

DIODE SCHOTTKY 100V D2PAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: 750 mV @ 30 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 mA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

HS1GF-T

Taiwan Semiconductor Corporation

50NS, 1A, 400V, HIGH EFFICIENT R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 11pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: SMAF
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

CMSH2-60M-TR13-PBFREE

Central Semiconductor Corp

DIODE SCHOTTKY 60V 2A SMA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 60 V
• Capacitance @ Vr, F: 120pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: -

JANS1N5417

Microchip Technology

DIODE GEN PURP 200V 3A B AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: B, Axial
• Supplier Device Package: B, Axial
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: -

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