Diodes Incorporated Productos

FD2400022

Diodes Incorporated

OSCILLATOR XO 24.000MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 24MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±50ppm
• Operating Temperature: -20°C ~ 70°C
• Current - Supply (Max): 15mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
• Height - Seated (Max): 0.051" (1.30mm)

Paquete: 4-SMD, No Lead

FD1630012

Diodes Incorporated

OSCILLATOR XO 16.384MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 16.384MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 2.5V
• Frequency Stability: ±50ppm
• Operating Temperature: -40°C ~ 85°C
• Current - Supply (Max): 15mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
• Height - Seated (Max): 0.051" (1.30mm)

Paquete: 4-SMD, No Lead

DMN6068SE-13

Diodes Incorporated

MOSFET N-CH 60V 4.1A SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 68 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

Paquete: TO-261-4, TO-261AA

DMN10H170SFG-7

Diodes Incorporated

MOSFET N-CH 100V 2.9A POWERDI

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14.9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 870.7pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 940mW (Ta)
• Rds On (Max) @ Id, Vgs: 122 mOhm @ 3.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI3333-8
• Package / Case: 8-PowerWDFN

Paquete: 8-PowerWDFN

ZVN3306A

Diodes Incorporated

MOSFET N-CH 60V 270MA TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 18V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 625mW (Ta)
• Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-92-3
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)

Paquete: TO-226-3, TO-92-3 (TO-226AA)

ZXMP2120FFTA

Diodes Incorporated

MOSFET P-CH 200V SOT23F-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 137mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 28 Ohm @ 150mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23F
• Package / Case: SOT-23-3 Flat Leads

Paquete: SOT-23-3 Flat Leads

1SMB5931B-13

Diodes Incorporated

DIODE ZENER 18V 3W SMB

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 12 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 13.7V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB

Paquete: DO-214AA, SMB

RS1MSP1-7

Diodes Incorporated

FAST RECOVERY RECTIFIER PDI123

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 10µA @ 1000V
• Capacitance @ Vr, F: 4pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: POWERDI?123
• Supplier Device Package: PowerDI? 123
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: POWERDI?123

S3KB-13-F

Diodes Incorporated

DIODE GEN PURP 800V 3A SMB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 800V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: DO-214AA, SMB

PBPC1003

Diodes Incorporated

RECT BRIDGE 8A 200V PBPC8

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Operating Temperature: -65°C ~ 125°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-Square, PBPC-8
• Supplier Device Package: PBPC-8

Paquete: 4-Square, PBPC-8

AP7343D-18FS4-7B

Diodes Incorporated

IC REG LINEAR 1.8V 300MA 4DFN

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.25V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.39V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 60µA
• PSRR: 75dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: X2-DFN1010-4

Paquete: 4-XDFN Exposed Pad

PT7M6837ID3TBEX

Diodes Incorporated

RESET GENERATOR SOT143

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: 140 ms Minimum
• Voltage - Threshold: 1.388V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

TLV272IM8-13

Diodes Incorporated

IC OPAMP GP RRO 8MSOP

• Amplifier Type: CMOS
• Number of Circuits: 2
• Output Type: Rail-to-Rail
• Slew Rate: 2 V/µs
• Gain Bandwidth Product: 2MHz
• -3db Bandwidth: -
• Current - Input Bias: 1pA
• Voltage - Input Offset: 500µV
• Current - Supply: 550µA
• Current - Output / Channel: 8mA
• Voltage - Supply, Single/Dual (±): 2.7 V ~ 16 V, ±1.35 V ~ 8 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: 8-MSOP

Paquete: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

PI3EQX6801ZDE

Diodes Incorporated

IC REDRIVER SAS/SATA 2CH 20TQFN

• Type: Buffer, ReDriver
• Applications: SAS, SATA
• Input: CML
• Output: CML
• Data Rate (Max): 6.5Gbps
• Number of Channels: 2
• Delay Time: -
• Signal Conditioning: Input Equalization, Output Pre-Emphasis
• Capacitance - Input: -
• Voltage - Supply: 1.5V, 3.3V
• Current - Supply: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: -
• Package / Case: 20-WFQFN Exposed Pad
• Supplier Device Package: 20-TQFN (4x4)

Paquete: 20-WFQFN Exposed Pad

PI5V331WE

Diodes Incorporated

IC VIDEO MULTIPLEXER 4X1 16SOIC

• Applications: Video
• Multiplexer/Demultiplexer Circuit: 4:1
• Switch Circuit: -
• Number of Channels: 2
• On-State Resistance (Max): 10 Ohm
• Voltage - Supply, Single (V+): 5V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: 150MHz (Min)
• Features: Bi-Directional
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

Paquete: 16-SOIC (0.154", 3.90mm Width)

PI3PCIE3415ZHEX-2017

Diodes Incorporated

IC MULTIPLEXER PCIE 4CH 42TQFN

• Applications: PCIe
• Multiplexer/Demultiplexer Circuit: 2:1
• Switch Circuit: -
• Number of Channels: 4
• On-State Resistance (Max): -
• Voltage - Supply, Single (V+): 3 V ~ 3.6 V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: 8.7GHz
• Features: Bi-Directional, SATA, USB 3.0
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: -
• Supplier Device Package: -

Paquete: -

PI6CEQ20200LIEX

Diodes Incorporated

IC CLOCK GENERATOR 20-TSSOP

• PLL: Yes
• Main Purpose: PCI Express (PCIe)
• Input: HCSL
• Output: HCSL
• Number of Circuits: 1
• Ratio - Input:Output: 1:2
• Differential - Input:Output: Yes/Yes
• Frequency - Max: 110MHz
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

Paquete: 20-TSSOP (0.173", 4.40mm Width)

SMAJ24A-13

Diodes Incorporated

TVS DIODE 24VWM 38.9VC SMA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 24V
• Voltage - Breakdown (Min): 26.7V
• Voltage - Clamping (Max) @ Ipp: 38.9V
• Current - Peak Pulse (10/1000µs): 10.3A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA

Paquete: DO-214AC, SMA

DFLT7V5A-7

Diodes Incorporated

TVS DIODE 7.5VWM POWERDI123

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 7.5V
• Voltage - Breakdown (Min): 8.33V
• Voltage - Clamping (Max) @ Ipp: 12.9V
• Current - Peak Pulse (10/1000µs): 17.4A
• Power - Peak Pulse: 225W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: POWERDI?123
• Supplier Device Package: PowerDI? 123

Paquete: POWERDI?123

AH1897-FA-7

Diodes Incorporated

MAGNETIC SWITCH OMNIPOLAR 4DFN

• Function: Omnipolar Switch
• Technology: Hall Effect
• Polarization: Either
• Sensing Range: ±4mT Trip, ±3.5mT Release
• Test Condition: 25°C
• Voltage - Supply: 1.6 V ~ 3.6 V
• Current - Supply (Max): 13µA
• Current - Output (Max): 3mA
• Output Type: Push-Pull
• Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: 4-DFN-EP (1.2x1.6)

Paquete: 4-XDFN Exposed Pad

PS7M809TTE

Diodes Incorporated

IC CLOCK

• Type: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Input: -
• Output: -
• Frequency - Max: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

DFLZ22-13

Diodes Incorporated

POWER ZENER DIODE PDI123 T&R 10K

• Voltage - Zener (Nom) (Vz): 22 V
• Tolerance: ±5.68%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 16 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: POWERDI®123
• Supplier Device Package: PowerDI™ 123

Paquete: -

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MMDT3946Q-7R

Diodes Incorporated

General Purpose Transistor SOT36

• Transistor Type: 1 NPN, 1 PNP Complementary
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 50nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 200mW
• Frequency - Transition: 300MHz, 250MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

Paquete: -

GBP208

Diodes Incorporated

LOW POWER BRIDGE GBP TUBE 35PCS

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800 V
• Current - Average Rectified (Io): 2 A
• Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBP
• Supplier Device Package: GBP

Paquete: -

BAT54LP-7-79

Diodes Incorporated

DIODE SCHOTTKY 30V 200MA 2DFN

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 25 V
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 0402 (1006 Metric)
• Supplier Device Package: X1-DFN1006-2
• Operating Temperature - Junction: -65°C ~ 125°C

Paquete: -

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DMNH6035SPDW-13

Diodes Incorporated

MOSFET 2N-CH 60V 33A POWERDI50

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
• Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V
• Power - Max: 2.4W (Ta), 68W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 8-PowerTDFN
• Supplier Device Package: PowerDI5060-8 (Type R)

Paquete: -

TT3M_HF

Diodes Incorporated

LOW POWER BRIDGE TTL T&R 1.5K

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 3 A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: TT

Paquete: -

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DMP2043UCA3-7

Diodes Incorporated

MOSFET P-CH 20V 4.2A X2DSN1010-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 10 V
• Vgs (Max): -20V
• FET Feature: -
• Power Dissipation (Max): 650mW (Ta)
• Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: X2-DSN1010-3
• Package / Case: 3-XFDFN

Paquete: -