Diodes Incorporated Productos

FL2500281

Diodes Incorporated

CRYSTAL 25.0000MHZ 18PF SMD

• Type: MHz Crystal
• Frequency: 25MHz
• Frequency Stability: ±50ppm
• Frequency Tolerance: ±20ppm
• Load Capacitance: 18pF
• ESR (Equivalent Series Resistance): 50 Ohm
• Operating Mode: Fundamental
• Operating Temperature: -20°C ~ 70°C
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.030" (0.75mm)

Paquete: 4-SMD, No Lead

ZXMN3A01ZTA

Diodes Incorporated

MOSFET N-CH 30V 3.3A SOT89

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 186pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 970mW (Ta)
• Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-89
• Package / Case: TO-243AA

Paquete: TO-243AA

DMP2100UCB9-7

Diodes Incorporated

MOSFET 2P-CH 20V 3A 9UWLB

• FET Type: 2 P-Channel (Dual) Common Source
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3A
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 1A, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
• Power - Max: 800mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 9-UFBGA, WLBGA
• Supplier Device Package: U-WLB1515-9

Paquete: 9-UFBGA, WLBGA

DDTA114WKA-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SC59-3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 4.7k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SC-59-3

Paquete: TO-236-3, SC-59, SOT-23-3

DDTC144WCA-7-F

Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT23-3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 22k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

Paquete: TO-236-3, SC-59, SOT-23-3

BZX84C3V9W-7

Diodes Incorporated

DIODE ZENER 3.9V 200MW SOT323

• Voltage - Zener (Nom) (Vz): 3.9V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

Paquete: SC-70, SOT-323

MMBZ5233B-7

Diodes Incorporated

DIODE ZENER 6V 350MW SOT23-3

• Voltage - Zener (Nom) (Vz): 6V
• Tolerance: ±5%
• Power - Max: 350mW
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 3.5V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

Paquete: TO-236-3, SC-59, SOT-23-3

BZX84C15W-7-F

Diodes Incorporated

DIODE ZENER 15V 200MW SOT323

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±6%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 10.5V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

Paquete: SC-70, SOT-323

BZT585B8V2T-7

Diodes Incorporated

DIODE ZENER 8.2V 350MW SOD523

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±2%
• Power - Max: 350mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 700nA @ 5V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523

Paquete: SC-79, SOD-523

UF3006-T

Diodes Incorporated

DIODE GEN PURP 800V 3A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: DO-201AD, Axial

B260AE-13

Diodes Incorporated

SCHOTTKY RECTIFIER SMA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 650mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 60V
• Capacitance @ Vr, F: 75pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-214AC, SMA

SDM1M40LP8-7

Diodes Incorporated

DIODE SCHOTTKY 40V 1A 2DFN

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 660mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 8.4ns
• Current - Reverse Leakage @ Vr: 20µA @ 40V
• Capacitance @ Vr, F: 25pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-UFDFN
• Supplier Device Package: U-DFN1608-2
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: 2-UFDFN

MBR1535CT

Diodes Incorporated

DIODE ARRAY SCHOTTKY 35V TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 35V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

Paquete: TO-220-3

AP131-35WG-7

Diodes Incorporated

IC REG LINEAR 3.5V 300MA SOT25

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 100µA
• PSRR: 60dB (100Hz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-25

Paquete: SC-74A, SOT-753

APX803L20-28SA-7

Diodes Incorporated

RESET GENERATOR SOT23

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: 143 ms Minimum
• Voltage - Threshold: 2.8V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

PI3CH800QE-2017

Diodes Incorporated

BUS SWITCH 3V QSOP-20

• Type: -
• Circuit: -
• Independent Circuits: -
• Current - Output High, Low: -
• Voltage Supply Source: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

PI2PCIE2212ZHE

Diodes Incorporated

IC MUX/DEMUX 2X1 28TQFN

• Applications: PCIe
• Multiplexer/Demultiplexer Circuit: 2:1
• Switch Circuit: -
• Number of Channels: 2
• On-State Resistance (Max): -
• Voltage - Supply, Single (V+): 1.5 V ~ 1.8 V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: 3.8GHz
• Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 28-VFQFN Exposed Pad
• Supplier Device Package: 28-TQFN-EP (3.5x5.5)

Paquete: 28-VFQFN Exposed Pad

P6SMAJ13ADF-13

Diodes Incorporated

TRANSIENTVOLTAGESUPPRESSORD-FLAT

• Type: -
• Unidirectional Channels: -
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): -
• Voltage - Breakdown (Min): -
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: -
• Applications: -
• Capacitance @ Frequency: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

AP7354D-28FS4-7

Diodes Incorporated

LDO CMOS LOWCURR X2-DFN1010-4

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.4V @ 150mA
• Current - Output: 150mA
• Current - Quiescent (Iq): 0.6µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: X2-DFN1010-4 (Type B)

Paquete: 4-XDFN Exposed Pad

AP7370-28Y-13

Diodes Incorporated

LDO CMOS LOWCURR SOT89

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 18V
• Voltage - Output (Min/Fixed): 2.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 300mA
• Current - Quiescent (Iq): 2.5µA
• Current - Supply (Max): 300µA
• PSRR: -
• Control Features: -
• Protection Features: Over Current, Over Temperature, Reverse Current, Short Circuit
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

Paquete: TO-243AA

MMBT3906Q-7-F

Diodes Incorporated

GENERAL PURPOSE TRANSISTOR SOT23

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 200 mA
• Voltage - Collector Emitter Breakdown (Max): 40 V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 50nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 310 mW
• Frequency - Transition: 250MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

Paquete: -

B0530W-7-G

Diodes Incorporated

DIODE SCHOTTKY 30V 500MA SOD123

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 130 µA @ 30 V
• Capacitance @ Vr, F: 170pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: -65°C ~ 125°C

Paquete: -

Request a Quote

DXTN3C100PD-13

Diodes Incorporated

PWR LOW SAT TRANSISTOR POWERDI50

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 100V
• Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
• Power - Max: 1.47W
• Frequency - Transition: 130MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: PowerDI5060-8 (Type UXD)

Paquete: -

GZ23C5V6-7

Diodes Incorporated

DIODE ZENER 5.6V 200MW SOT23

• Voltage - Zener (Nom) (Vz): 5.6 V
• Tolerance: ±5.45%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

Paquete: -

Request a Quote

DMTH43M7LFGQ-7-A

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2182 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.5W (Ta), 65.2W (Tc)
• Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: POWERDI3333-8
• Package / Case: 8-PowerVDFN

Paquete: -

Request a Quote

S8M02600B

Diodes Incorporated

THYRISTOR TO220AB TUBE 50PCS

• Voltage - Off State: 600 V
• Voltage - Gate Trigger (Vgt) (Max): 1 V
• Current - Gate Trigger (Igt) (Max): 200 µA
• Voltage - On State (Vtm) (Max): 1.8 V
• Current - On State (It (AV)) (Max): -
• Current - On State (It (RMS)) (Max): 8 A
• Current - Hold (Ih) (Max): 6 mA
• Current - Off State (Max): 10 µA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 80A @ 60Hz
• SCR Type: Sensitive Gate
• Operating Temperature: -40°C ~ 110°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

Paquete: -

AP7366EA-SN-7

Diodes Incorporated

IC REG LINEAR POS ADJ 600MA 6DFN

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 5V
• Voltage Dropout (Max): 0.85V @ 600mA
• Current - Output: 600mA
• Current - Quiescent (Iq): 80 µA
• Current - Supply (Max): -
• PSRR: 75dB ~ 55dB (1kHz ~ 10kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-UDFN Exposed Pad
• Supplier Device Package: U-DFN2020-6

Paquete: -

DMN32D0LVQ-13

Diodes Incorporated

MOSFET 2N-CH 30V 0.68A SOT563

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
• Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
• Power - Max: 480mW (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Paquete: -

Request a Quote