Toshiba's 12 V Low -Public Dorge of MOSFET helps the battery driver device | Heisener Electronics
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Toshiba's 12 V Low -Public Dorge of MOSFET helps the battery driver device

Technology Cover
Fecha de Publicación: 2022-10-03, Toshiba Semiconductor and Storage

     Toshiba's SSM10N954L is a 12 V leaked N -channel MOSFET, which is designed for battery protection circuits for mobile devices and other devices. The lithium -ion battery pack uses a high robust protection circuit to improve safety. These batteries need to reduce fever during the charging/discharge process, so low -power and high -density installation protection circuits are required. Toshiba provides a thin MOSFET low resistance to meet these needs.

       Similar to the previously released SSM6N951L, this product uses advanced micro -technology to further reduce its resistance, which helps it provide low power loss. Another feature is due to the low leakage current from the gate (leakage current), which is low in standby, which helps batteries for a longer time. SSM10N954L is encapsulated in TCPAC -153001 (1.49 mm x 2.98 mm, T: 0.11 mm (model)).

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