Toshiba Electronics components and storage Devices Co., Ltd. launched 150V N channel power MOSFET-- "TPH9R00CQ5", which uses the latest generation of U-MOSX-H process, can be used for industrial equipment switching power supply, including data center and communication base stations and other power applications. The product is packaged in a widely accepted surface mount SOP Advance (N) package.
TPH9R00CQ5 has the industry-leading 9.0mΩ (maximum) low drain-source on-resistance, which is about 42% lower than Toshiba's existing product "TPH1500CNH1". At the same time, compared with Toshiba's existing product "TPH9R00CQH4[4]", the reverse recovery charge is reduced by about 74% and the reverse recovery time is shortened by about 44%. The above indexes are the two key reverse recovery indexes reflecting the application performance of synchronous rectification.
The new product is oriented to synchronous rectifier application, which reduces the power loss of switching power supply and helps to improve the system efficiency. In addition, compared with TPH9R00CQH, the new product reduces the peak voltage generated in the switching process, which helps to reduce the EMI of the power supply. In addition, Toshiba also provides related tools to support switching power supply circuit design. In addition to the G0 SPICE model, which can quickly verify circuit function, a high-precision G2 SPICE model that can accurately reproduce circuit transient characteristics is now available.
Reference design
"1kW non-isolated Buck-Boost DC-DC Converter for Communication Equipment"
"3-phase multilevel Inverters using MOSFETs"
Applications
● Power supplies for industrial equipment, such as those used in data centers and communications base stations
● Switching power supply (high efficiency DC-DC converter, etc.)
Features
● Industry-leading low on-resistance: RDS(ON) = 9.0mΩ (Max.) (VGS = 10V)
● Industry-leading low reverse recovery charge: Qrr = 34nC (typical value) (-dIDR/dt = 100A/μs)
● Industry-leading Fast reverse recovery time: trr = 40ns (typical value) (-dIDR/dt = 100A/μs)
● High junction temperature rating: Tch (maximum) = 175℃
