Alpha and Omega Semiconductor Ltd. has released its latest 80V power MOSFET, which utilizes patented shielded door technology that optimizes the higher switching frequencies used in telecommunications and server power supplies, providing greater efficiency than the previous generation. The new 80V power MOSFET technology produces lower switching losses in hard switching, topologies, and has a smaller voltage overshoot than the previous generation. This lighter load operation and enhanced performance within the load range provide more accessible design options for efficient applications. The range of devices achieves the highest levels of power density and energy efficiency, which is critical for power supply, solar and battery-powered applications such as eScooters.
AONR66820 and AONS66811 are power MOSFEts in DFN3.3x3.3 and DFN5x6 packages respectively, and AONR66820 is ideal for isolating DC-DC converters used in telecommunications applications. The AONS66811 is suitable for synchronous rectification and provides improved reverse recovery charging and reduced voltage overshot, thus providing higher efficiency and stronger robust power supply.
The AOTL66810 (80V) charge pack has approximately 25% less footprint than the standard line-junction TO-263 (D2PAK) pack. This new device provides a higher power density than existing solutions. It is ideal for industrial brushless DC motor applications and battery management to reduce the number of MOSFEts in parallel. The device has a maximum current of 1.25mOhms at 10Vgs and a maximum leakage current of 420A at 25℃. The 1700A pulse current is limited by junction temperature 175C.
"Clamp technology significantly improves performance in a powerful TOLL package, enabling higher current density and higher current capacity. AOTL66810 simplifies the new design, enabling cost savings across the system due to the reduction in the number of parallel devices. AOS's TOLL package is best suited for high-power applications, "said Peter H. Wilson, AOS's low-voltage /MV MOSFET director.
