There is a new MOSFET gate driver IC TCK421G which can control the gate voltage of the external N-channel MOSFET according to the input voltage. It was released by Toshiba Electronics Europe
The driver combines back-to-back connections of external N-channel MOSFEts to configure reverse current blocking, making it ideal for configuring power multiplexers or load switching circuits.
The device supports a wide range of input voltages (VIN) from 2.7 to 28V, providing a stable supply of 10V to the gate source voltage of the external mosfet, thus realizing the switch of large current to a charge pump circuit. The device also includes overvoltage and undervoltage locking functions. The gate drive voltage can be selected according to the actual application. In addition, the typical input static current (IQ(ON)) in ON is as low as 140mA, while the standby current (IQ(OFF)) in OFF is only 0.5mA.
The device is packaged in a chip level WCSP6G package with a floor area of 1.2mm x 0.8mm and a height of 0.35mm. It's one of the smallest packages in the industry, allowing it to be used in tightly packed devices like wearables and smartphones.
Due to its high efficiency and small size, the series can be used in many applications, including battery powered, consumer and industrial equipment. This is the first product in the range, which also includes six devices.
