NXP Semiconductors announced the launch of the new higher power BTS7202 RF front-end receiver module (FEM) and BTS6403/6305 pre-driver amplifiers to support the construction of 5G massive multiple-input multiple-output (MIMO) base stations with power up to 20W per channel. Developed and implemented on NXP's silicon germanium (SiGe) process, the two new devices have moderate power consumption to help mobile network operators (MNOs) reduce operating costs. In addition, the high linearity and low noise figure of the new devices help to improve 5G signal quality.
As the global 5G network continues to expand, more and more mobile network operators are adopting the 32T32R solution to improve the signal coverage of massive MIMO base stations in less densely populated areas of cities and suburban areas. However, with the 32T32R solution, higher power RF components are required for each channel to ensure the total power required for 5G signal coverage.
Doeco Terpstra, Vice President and General Manager of Smart Antenna Solutions at NXP, said: "As 5G networks become denser, higher power solutions will ensure consistent network and signal quality. Our customers recognize that higher power solutions The solution can not only meet the power requirements of the network operator's 32-antenna array, but also does not affect the network quality."
The new BTS7202 RF front-end receiving module (FEM) and BTS6403/6305 pre-driver amplifiers provide a convenient and extensive solution for 5G base stations, and complete NXP's solution on the 32T32R power amplification chain. The BTS7202 RF front-end receiving module (FEM) integrates an RF switch capable of withstanding up to 20W of transmit chain power, which reduces system complexity. The BTS6305 pre-driver amplifier also integrates a balun to reduce design costs.
