Vishay Intertechnology has released two new n-channel trench fET mosFeTs that improve efficiency, power density, and board-level reliability in telecommunications and industrial applications. Their space-saving PowerPAK 8x8L package provides board-level reliability with a combination of wireless construction and Gulwing leads for mechanical stress relief. To achieve these design objectives, the 60V SiJH600E and 80V SiJH800E combine ultra-low on-resistance with +175C high-temperature operation and high continuous drain current handling
At 10V, the devices have an ultra-low on-resistance of 0.65mOhm and 1.22mOhm, 54% and 52% lower than their PowerPAK SO-8 counterparts. This translates into energy savings and reduced power losses due to conduction.
To increase power density, the device provides 373A and 288A continuous drain currents in a package 60% smaller and 57% thinner than the D²PAK. To save board space, two PowerPAK SO-8 parallel devices can also be used per MOSFET.
Operating at high temperatures up to +175C, the device offers rugged and reliable synchronous rectifier power, battery management, motor drive control, and power tool applications. Lead (Pb) free, halogen-free, ROHS compliant, 100% Rg and UIS tested.
