Murata - New 6W DC-DC converter optimized for IGBT, SiC and MOSFET gate driving

Murata Power Solutions announced the expansion of its MGJ6 series of isolated 6W dual output DC-DC converters. The MGJ6 series is optimized to meet the bipolar voltages required for high- and low-side IGBT, SiC, and MOSFET gate drive applications. SIP, DIP, and thin surface-mount packages are now available. This series includes a combination of wide input voltages with nominal voltages of 5, 12, 24VDC and + 15 / – 5, + 15 / – 10 or + 20 / – 5VDC output. The asymmetric output is suitable for low and medium power applications requiring DC bus voltages up to 3kVDC. It can provide the best drive level to maintain high system efficiency at low EMI levels. Also, due to its extremely low coupling capacitance (typically 15pF), EMI coupling through the converter is reduced. The MGJ6 series has a dV / dt immunity of at least 80kV / us at 1.6 kV, and has high reliability in fast switching drive systems. This series also has partial discharge performance, which is essential to extend the service life in high-performance applications. Currently waiting for the certification of ULMO5050 for 2 types of MOOP and 2 types of MOPP for reinforced insulation safety and medical third edition ANSI / AAMI ES60601-1. The creepage distance and electrical clearance of MGJ6 are 8mm, which will meet the requirements of safety agencies for ultra-high working voltage. Ann-Marie Bayliss, Product Marketing Manager, Murata, said in a comment: "The MGJ6 series provides optimized voltage for power gate drivers to achieve the best overall system performance and efficiency. Due to the partial discharge performance, various sizes are now available The product." The company said that short-circuit and overload protection functions are standard in this range, and frequency synchronization / enable input pins can simplify the design of EMC filters.