Mitsubishi Electric has begun offering samples of a new integrated SBD*1 SiC*2-MOSFET*3 module with a voltage rating of 3.3kV and insulation resistance of 6.0kVrms. It will help to provide higher power density, efficiency and reliability for railways, electric power systems and large industrial converter systems.
In recent years, in order to reduce carbon emissions in the global society, power semiconductor devices are increasingly used in efficient power conversion applications, especially in heavy industry. These devices are used in converter equipment, such as converter systems in track traction and DC transmission systems. Among them, SiC power semiconductor can greatly reduce power loss, people have high expectations for it. In addition, for large industrial equipment, there is an increasing demand for high-efficiency power semiconductor modules in order to further improve their conversion efficiency.
To further contribute to the high power output, high efficiency and high reliability of large industrial converter equipment, Mitsubishi Electric has developed this SiC MOSFET module with a built-in SBD SiC MOSFET chip and optimized internal packaging structure to effectively reduce switching losses. Samples will be available soon. Thus, Mitsubishi Electric 3.3kV LV100 package contains a total of 4 SiC MOSFET modules and 2 Si IGBT modules.
