IR2011S MOSFET Driver: Introduction, Pinout and Connection

IR2011S Introduction

The IR2011S is a high-power, high-speed MOSFET driver featuring independent high and low side output channels, making it suitable for driving N-channel MOSFETs in both high and low-side configurations. Its logic inputs are compatible with standard CMOS or LSTTL logic down to 3.0V, offering flexibility in interfacing with various control systems. 

The driver includes a high pulse current buffer stage, designed to minimize cross-conduction between the high and low side, enhancing efficiency. Matched propagation delays simplify its use in high-frequency applications, and its floating channel enables operation up to 200V on the high side. Utilizing proprietary HVIC and latch-immune CMOS technologies, the IR2011S ensures reliable and rugged monolithic construction for demanding environments.

IR2011S Marking Information

IR2011S Pinout

VCC: Low side supply 

VB: High side floating supply 

HO: High side gate drive output

VS: High side floating supply return  

HIN: Logic input for high side gate driver outputs (HO), in phase 

LIN: Logic input for low side gate driver outputs (LO), in phase 

COM: Low side return 

LO: Low side gate drive output 

IR2011S Typical Connection

IR2011S Functional Block Diagram

IR2011S Specification

IR2011S Features

Floating channel designed for bootstrap operation

Fully operational to 200V

Tolerant to negative transient voltage, dV/dt immune

Gate drive supply ranges from 10 to 20V

Independent low and high side channels

Input logic HIN/LIN active high

Undervoltage lockout for both channels

3.3V and 5V logic compatible

CMOS Schmitt - triggered inputs with pull-down

Matched propagation delay for both channels 

IR2011S Applications

Motor Control

Power Supplies

Inverters

DC-DC Converters

Class D Audio Amplifiers

Lighting Control

Switch Mode Power Supplies (SMPS) for Servers and Telecom

Home Appliances

Electric Vehicles (EV) and Hybrid Vehicles (HEV)

IR2011S Package

The IR2011S is packaged in an 8-pin SOIC package, offering a compact and efficient form factor for various high-power applications. This package is ideal for surface-mount technology (SMT) and is widely used in electronic assemblies where space and performance are key considerations. The 8-SOIC package dimensions are as follows:

How to Connect IR2011S?

To connect the IR2011S driver, start by hooking up the VCC pin to your low-side power supply to power the low-side MOSFET. For the high-side MOSFET, you'll need to connect the VB pin to a floating high-side supply. This supply provides power to the high-side MOSFET, but keep in mind that VB is referenced to VS, which is the high-side MOSFET’s source, so it needs to be set up accordingly. The HO pin goes to the gate of the high-side MOSFET, and the LO pin should be connected to the gate of the low-side MOSFET to drive each MOSFET as needed.

For control signals, the HIN and LIN pins receive logic inputs, which determine whether the high or low side MOSFET should turn on. When these pins are driven high, they trigger the corresponding MOSFET to turn on. Finally, VS is the floating return for the high-side supply, and COM should be connected to ground, providing a common reference point for the entire circuit. 

FAQs

How does the IR2011S driver work?

The IR2011S uses a combination of high and low-side MOSFET drivers. It provides two outputs: one for the low-side MOSFET (LO) and another for the high-side MOSFET (HO). It can drive N-channel MOSFETs, where the high-side driver uses a floating supply referenced to the source of the high-side MOSFET.

Can the IR2011S drive both high and low-side MOSFETs simultaneously?

Yes, the IR2011S can independently drive both high-side and low-side MOSFETs, making it ideal for half-bridge or full-bridge configurations.

Is the IR2011S suitable for 3-phase systems?

Yes, the IR2011S can be used in 3-phase systems when paired with multiple drivers or in configurations that require both high and low-side switching.