Onsemi has released its new 600V SUPERFET V series MOSFEts. As part of this family, three product groups -- FAST, Easy Drive, and FRFET -- are optimized to deliver first-class performance across a variety of applications and topologies. High-performance components enable power supplies to meet pressing efficiency requirements, such as the 80 PLUS Titanium, especially under challenging 10% load conditions.
The series offers superior switching characteristics and lower gate noise, providing enhanced electromagnetic interference performance -- a significant advantage for servers and telecommunications systems. In addition, robust body diodes and elevated VGSS (DC±30V) enhance system reliability.
"In response to climate change, 80 Plus Titanium certification requires servers and data storage hardware to deliver 90 percent power efficiency levels under 10 percent load and 96 percent power efficiency under 50 percent load," said Asif Jakwani, senior vice president and General manager of Onsemi's Advanced Power Division. "The FAST, Easy Drive and FRFET versions of our Ultra ET V family meet these needs, providing a reliable solution that ensures continuous system reliability."
The FAST version provides ultimate efficiency in hard switching topologies such as high-end PFC. They are optimized to reduce gate charge (Qg) and EOSS losses for fast switching. The initial devices include NTNL041N60S5H (41M ∧ RDS(ON)) and NTHL185N60S5H (185M ∧ RDS(ON)) in TO-247 package. The NTP185N60S5H comes in a TO-220 package and the NTMT185N60S5H comes in an 8mm x 8mm x 1mm Power88 package that ensures MSL 1 and has a Kelvin source configuration TO enhance gate noise and switching power losses.
The Easy Drive version is ideal for both hard and soft switch topologies, including an internal gate resistor (Rg) and optimized internal capacitance. They are suitable for common use of multiple applications, including PFC and LLC. On these devices, the built-in Zener diode gate between the source and more than 120∧RDS(top) provides less pressure in the gate oxide layer and higher ESD strength leads to better assembly yield and fewer failures. Both devices offer 99 m ∧ and 120 m ∧RDS(ON) -NTHL099N60S5 and NTHL120N60S5Z in to-247 packages.
The Easy Drive version is ideal for both hard - and soft-switch topologies, including internal gate resistance (Rg) and optimized internal capacitance. They are suitable for a variety of applications, including PFC and LLC. On these devices, the built-in Zener diode gate between the source and more than 120∧RDS(top) provides less gate oxide layer pressure, and higher ESD intensity results in better assembly yield and fewer failures. Both devices offer 99 m ∧ and 120 m ∧RDS(ON) -NTHL099N60S5 and NTHL120N60S5Z in to-247 packages.
