Mouser supplies GaN Systems gS-EVB-HB-0650603B-HD Half-bridge bipolar drive switch evaluation board. This compact GaN electronic mode half-bridge evaluation board has some significant features, while reducing the overall number of components and saving valuable board space.
Since the driver does not require a secondary-side power supply or bootstrap components, it frees up valuable board space and enables a more cost-effective design. The board provides two HEY1011-L12C GaN FET drivers and two 650V, 60A GaN e-mode transistors arranged in a half-bridge configuration. The HEY1011 is an isolated gate driver optimized for driving GaN FETs with fast propagation delay and high peak source/sink capability for high frequency applications requiring isolation, level shifting or ground separation for noise immunity.
The board can perform double pulse tests or connect a half bridge to an existing LC power segment. The double-pulse test can be safely used to evaluate the switching characteristics of power switches under hard switching conditions. And to help mitigate the effects of gate-to-drain capacitor currents, the board uses a bipolar gate drive.
The Half-Bridge Bipolar Driver Switch Evaluation Board is ideal for designers developing high-power wireless chargers, industrial inverters, motor drives/VFDs, data centers, residential energy storage systems, and other power electronics-based applications.
