Cree - Industry’s first 900V SiC MOSFET optimized for high-frequency power electronics (C3M0065090J)

Cree's C3M series of silicon carbide power MOSFETs. The C3M power MOSFET is the latest breakthrough in silicon carbide (SiC) power device technology, and is the industry's first SiC 900V MOSFET platform, optimized for high-frequency power electronics applications. The company said that the new 900V platform can achieve smaller, more efficient next-generation power conversion systems, while reducing system costs compared to silicon-based solutions. The C3M SiC power MOSFET has a high blocking voltage of 900V and a low on-resistance, which limits power loss and reduces the need for other cooling components. The C3M0065090J has the lowest on-resistance rating (65mohm) of all MOSFET devices on the market and is available in a low-impedance D2Pak-7L surface-mount package with Kelvin connections to minimize gate ringing. These N-channel MOSFETs provide optimized gate drive for + 15V / -5V and continuous drain current up to +/- 36A. The fast intrinsic diode provides 131nC reverse recovery charge (Qrr) for the C3M0065090D through-hole model and 134nC reverse recovery charge (Qrr) for the C3M0065090J surface mount model. MOSFETs are suitable for various power management solutions, including switch mode power supplies (SPMS), battery chargers, solar inverters and other industrial high voltage applications.