Vishay Siliconix Productos

SI5479DU-T1-GE3

Vishay Siliconix

MOSFET P-CH 12V 16A CHIPFET

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 51nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 6V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 17.8W (Tc)
• Rds On (Max) @ Id, Vgs: 21 mOhm @ 6.9A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? ChipFet Single
• Package / Case: PowerPAK? ChipFET? Single

Paquete: PowerPAK? ChipFET? Single

SI4324DY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 36A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3510pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
• Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paquete: 8-SOIC (0.154", 3.90mm Width)

IRFR9214TRL

Vishay Siliconix

MOSFET P-CH 250V 2.7A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 50W (Tc)
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR420TRL

Vishay Siliconix

MOSFET N-CH 500V 2.4A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR9214

Vishay Siliconix

MOSFET P-CH 250V 2.7A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 50W (Tc)
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

SI7390DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 9A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

Paquete: PowerPAK? SO-8

SIA415DJ-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 12A SC70-6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
• Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.6A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SC-70-6 Single
• Package / Case: PowerPAK? SC-70-6

Paquete: PowerPAK? SC-70-6

IRFI9620GPBF

Vishay Siliconix

MOSFET P-CH 200V 3A TO220FP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3 Full Pack, Isolated Tab

Paquete: TO-220-3 Full Pack, Isolated Tab

IRFR220TRLPBF

Vishay Siliconix

MOSFET N-CH 200V 4.8A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
• Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFU024PBF

Vishay Siliconix

MOSFET N-CH 60V 14A I-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-251AA
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Paquete: TO-251-3 Short Leads, IPak, TO-251AA

IRFU110PBF

Vishay Siliconix

MOSFET N-CH 100V 4.3A I-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 25W (Tc)
• Rds On (Max) @ Id, Vgs: 540 mOhm @ 900mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-251AA
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Paquete: TO-251-3 Short Leads, IPak, TO-251AA

SI5915BDC-T1-E3

Vishay Siliconix

MOSFET 2P-CH 8V 4A 1206-8

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 8V
• Current - Continuous Drain (Id) @ 25°C: 4A
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.3A, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 4V
• Power - Max: 3.1W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: 1206-8 ChipFET?

Paquete: 8-SMD, Flat Lead

SIP21108DR-T1-E3

Vishay Siliconix

IC REG LIN POS ADJ 150MA SC70-5

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 1.2V
• Voltage - Output (Max): 5.78V
• Voltage Dropout (Max): 0.22V @ 150mA
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 85µA
• PSRR: 72dB ~ 38dB (1kHz ~ 100kHz)
• Control Features: Enable
• Protection Features: Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: SC-70-5

Paquete: 5-TSSOP, SC-70-5, SOT-353

SI9112DY-T1-E3

Vishay Siliconix

IC REG CTRLR MULT TOP 14SOIC

• Output Type: Transistor Driver
• Function: Step-Up/Step-Down
• Output Configuration: Positive
• Topology: Cuk, Flyback, Forward Converter, Push-Pull
• Number of Outputs: 1
• Output Phases: 1
• Voltage - Supply (Vcc/Vdd): 9 V ~ 13.5 V
• Frequency - Switching: 40kHz ~ 1MHz
• Duty Cycle (Max): -
• Synchronous Rectifier: No
• Clock Sync: No
• Serial Interfaces: -
• Control Features: Enable, Reset
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 14-SOIC

Paquete: 14-SOIC (0.154", 3.90mm Width)

SIP32459DB-T2-GE1

Vishay Siliconix

IC SW W/CTRL SLEW RATE WCSP6

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 1.5 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3A
• Rds On (Typ): 20 mOhm
• Input Type: Non-Inverting
• Features: Load Discharge, Slew Rate Controlled
• Fault Protection: -
• Operating Temperature: -40°C ~ 125°C (TJ)
• Package / Case: 6-UFBGA, CSPBGA
• Supplier Device Package: 6-WLCSP (1.46x0.96)

Paquete: 6-UFBGA, CSPBGA

SIP32419DN-T1-GE4

Vishay Siliconix

LOAD SWITCH 3A 28V 10DFN

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 6 V ~ 28 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3.5A
• Rds On (Typ): 56 mOhm
• Input Type: Non-Inverting
• Features: Power Good, Slew Rate Controlled, Status Flag
• Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 10-VFDFN Exposed Pad
• Supplier Device Package: 10-DFN (3x3)

Paquete: 10-VFDFN Exposed Pad

SIC620CD-T1-GE3

Vishay Siliconix

IC CTLR STAGE 60A PPAK MLP55-31L

• Output Configuration: Half Bridge
• Applications: Synchronous Buck Converters
• Interface: PWM
• Load Type: Inductive
• Technology: Power MOSFET
• Rds On (Typ): -
• Current - Output / Channel: 60A
• Current - Peak Output: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Voltage - Load: 4.5 V ~ 18 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Bootstrap Circuit, Diode Emulation, Status Flag
• Fault Protection: Over Temperature, Shoot-Through, UVLO
• Mounting Type: Surface Mount
• Package / Case: PowerPAK? MLP55-31L
• Supplier Device Package: PowerPAK? MLP55-31L

Paquete: PowerPAK? MLP55-31L

SJM187BXC

Vishay Siliconix

IC ANALOG SWITCH

• Switch Circuit: -
• Multiplexer/Demultiplexer Circuit: -
• Number of Circuits: -
• On-State Resistance (Max): -
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): -
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): -
• -3db Bandwidth: -
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): -
• Current - Leakage (IS(off)) (Max): -
• Crosstalk: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

DG308BAK/883

Vishay Siliconix

IC SWITCH QUAD SPST 16DIP

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 85 Ohm
• Channel-to-Channel Matching (ΔRon): 1.7 Ohm
• Voltage - Supply, Single (V+): 4 V ~ 44 V
• Voltage - Supply, Dual (V±): ±4 V ~ 22 V
• Switch Time (Ton, Toff) (Max): 200ns, 150ns
• -3db Bandwidth: -
• Charge Injection: 1pC
• Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
• Current - Leakage (IS(off)) (Max): 500pA
• Crosstalk: -95dB @ 100kHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-CDIP (0.300", 7.62mm)
• Supplier Device Package: 16-CERDIP

Paquete: 16-CDIP (0.300", 7.62mm)

DG221BDY

Vishay Siliconix

IC SWITCH QUAD SPST/CMOS 16SOIC

• Switch Circuit: SPST - NC
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 90 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): -
• Voltage - Supply, Dual (V±): ±15V
• Switch Time (Ton, Toff) (Max): 550ns, 340ns
• -3db Bandwidth: -
• Charge Injection: 20pC
• Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
• Current - Leakage (IS(off)) (Max): 5nA
• Crosstalk: -90dB @ 100kHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

Paquete: 16-SOIC (0.154", 3.90mm Width)

DG612EEN-T1-GE4

Vishay Siliconix

IC AMP/VIDEO/MUX LP 16QFN

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 115 Ohm
• Channel-to-Channel Matching (ΔRon): 600 mOhm
• Voltage - Supply, Single (V+): 3 V ~ 12 V
• Voltage - Supply, Dual (V±): ±3 V ~ 5 V
• Switch Time (Ton, Toff) (Max): 50ns, 35ns
• -3db Bandwidth: 1GHz
• Charge Injection: 1.4pC
• Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
• Current - Leakage (IS(off)) (Max): 100pA
• Crosstalk: -74dB @ 10MHz
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 16-UFQFN
• Supplier Device Package: 16-miniQFN (1.8x2.6)

Paquete: 16-UFQFN

SQJ479EP-T1_BE3

Vishay Siliconix

P-CHANNEL 80-V (D-S) 175C MOSFET

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 68W (Tc)
• Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8
• Package / Case: PowerPAK® SO-8

Paquete: -

SI6423ADQ-T1-GE3

Vishay Siliconix

MOSFET PCH 20V 10.3/12.5A 8TSSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 8 V
• Input Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta), 2.2W (Tc)
• Rds On (Max) @ Id, Vgs: 9.8mOhm @ 10A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSSOP
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)

Paquete: -

SI1965DH-T1-BE3

Vishay Siliconix

MOSFET 2P-CH 12V 1.3A SC70-6

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 1.14A (Ta), 1.3A (Tc)
• Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
• Power - Max: 740mW (Ta), 1.25W (Tc)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SC-70-6

Paquete: -

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IRFR014TRPBF-BE3

Vishay Siliconix

MOSFET N-CH 60V 7.7A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
• Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252AA
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paquete: -

SQ2319ES-T1-GE3

Vishay Siliconix

MOSFET P-CH 40V 4.6A TO-236

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paquete: -

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SQ2318BES-T1_GE3

Vishay Siliconix

MOSFET N-CH 40V 8A SOT23-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Tc)
• Rds On (Max) @ Id, Vgs: 26.3mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paquete: -

SIZ342ADT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 15.7A 8PWR33

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc)
• Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
• Power - Max: 3.7W (Ta), 16.7W (Tc)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerWDFN
• Supplier Device Package: 8-Power33 (3x3)

Paquete: -