Vishay Semiconductor Diodes Division Productos - Transistores - FET, MOSFET - Simple | Heisener Electronics
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Vishay Semiconductor Diodes Division Productos - Transistores - FET, MOSFET - Simple

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Paquete
En existencias
Cantidad
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
VS-FB180SA10P
Vishay Semiconductor Diodes Division

MOSFET N-CH 100V 180A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 180A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 180A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4
Paquete: SOT-227-4
En existencias2.656
MOSFET (Metal Oxide)
100V
180A
10V
4V @ 250µA
380nC @ 10V
10700pF @ 25V
±20V
-
480W (Tc)
6.5 mOhm @ 180A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4
VS-FA38SA50LCP
Vishay Semiconductor Diodes Division

MOSFET N-CH 500V 38A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 38A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 23A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias6.320
MOSFET (Metal Oxide)
500V
38A
10V
4V @ 250µA
420nC @ 10V
6900pF @ 25V
±20V
-
500W (Tc)
130 mOhm @ 23A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
hot FA57SA50LC
Vishay Semiconductor Diodes Division

MOSFET N-CH 500V 57A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 57A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 338nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 625W (Tc)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 34A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias5.344
MOSFET (Metal Oxide)
500V
57A
10V
4V @ 250µA
338nC @ 10V
10000pF @ 25V
±20V
-
625W (Tc)
80 mOhm @ 34A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
FA38SA50LC
Vishay Semiconductor Diodes Division

MOSFET N-CH 500V 38A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 38A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 23A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias6.960
MOSFET (Metal Oxide)
500V
38A
10V
4V @ 250µA
420nC @ 10V
6900pF @ 25V
±20V
-
500W (Tc)
130 mOhm @ 23A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
FB180SA10
Vishay Semiconductor Diodes Division

MOSFET N-CH 100V 180A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 180A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 108A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias3.040
MOSFET (Metal Oxide)
100V
180A
10V
4V @ 250µA
380nC @ 10V
10700pF @ 25V
±20V
-
480W (Tc)
6.5 mOhm @ 108A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
VS-FC220SA20
Vishay Semiconductor Diodes Division

MOSFET N-CH 200V 220A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 220A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.1V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 21000pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 789W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 150A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias5.920
MOSFET (Metal Oxide)
200V
220A
10V
5.1V @ 500µA
350nC @ 10V
21000pF @ 50V
±30V
-
789W (Tc)
7 mOhm @ 150A, 10V
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
VS-FA72SA50LC
Vishay Semiconductor Diodes Division

MOSFET N-CH 500V 72A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 72A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 338nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1136W (Tc)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 34A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias6.400
MOSFET (Metal Oxide)
500V
72A
10V
4V @ 250µA
338nC @ 10V
10000pF @ 25V
±20V
-
1136W (Tc)
80 mOhm @ 34A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
VS-FC80NA20
Vishay Semiconductor Diodes Division

MOSFET N-CH 200V 108A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 108A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10720pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 405W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: -
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias7.216
MOSFET (Metal Oxide)
200V
108A
10V
5.5V @ 250µA
161nC @ 10V
10720pF @ 50V
±30V
-
405W (Tc)
14 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
-
SOT-227
SOT-227-4, miniBLOC
VS-FA40SA50LC
Vishay Semiconductor Diodes Division

MOSFET N-CH 500V 40A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 40A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 543W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 23A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias3.904
MOSFET (Metal Oxide)
500V
40A
10V
4V @ 250µA
420nC @ 10V
6900pF @ 25V
±20V
-
543W (Tc)
130 mOhm @ 23A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
VS-FC420SA10
Vishay Semiconductor Diodes Division

POWER MODULE 100V 435A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias4.736
MOSFET (Metal Oxide)
100V
-
10V
-
375nC @ 10V
-
±20V
-
-
-
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
VS-FB190SA10
Vishay Semiconductor Diodes Division

MOSFET N-CH 100V 190A SOT227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 190A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.35V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 568W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 180A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias3.680
MOSFET (Metal Oxide)
100V
190A
10V
4.35V @ 250µA
250nC @ 10V
10700pF @ 25V
±20V
-
568W (Tc)
6.5 mOhm @ 180A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC