Página 54 - Vishay Semiconductor Diodes Division Productos - Diodos - Rectificadores
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Vishay Semiconductor Diodes Division Productos - Diodos - Rectificadores
- Simple

Registros 10.373
Página  54/371
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
1N4148-P-TAP
Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 2A DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 8ns
  • Current - Reverse Leakage @ Vr: 5µA @ 75V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 175°C (Max)
Paquete: DO-204AH, DO-35, Axial
En existencias7.024
75V
2A
1V @ 10mA
Fast Recovery =< 500ns, > 200mA (Io)
8ns
5µA @ 75V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)
BAW76-TR
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 300MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 300mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100nA @ 50V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 175°C (Max)
Paquete: DO-204AH, DO-35, Axial
En existencias2.896
50V
300mA (DC)
1V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
100nA @ 50V
2pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)
BAW76-TAP
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 300MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 300mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100nA @ 50V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 175°C (Max)
Paquete: DO-204AH, DO-35, Axial
En existencias5.600
50V
300mA (DC)
1V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
100nA @ 50V
2pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)
BAW75-TAP
Vishay Semiconductor Diodes Division

DIODE GEN PURP 25V 300MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 25V
  • Current - Average Rectified (Io): 300mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100nA @ 25V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 175°C (Max)
Paquete: DO-204AH, DO-35, Axial
En existencias5.136
25V
300mA (DC)
1V @ 30mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
100nA @ 25V
4pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)
1N4154TR
Vishay Semiconductor Diodes Division

DIODE GEN PURP 25V 150MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 25V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100nA @ 25V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-204AH, DO-35, Axial
En existencias5.296
25V
150mA
1V @ 30mA
Small Signal =< 200mA (Io), Any Speed
4ns
100nA @ 25V
4pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
1N914TAP
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 300MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 5µA @ 75V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-204AH, DO-35, Axial
En existencias2.032
100V
300mA
1V @ 10mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
5µA @ 75V
4pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
1N4448TAP
Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 720mV @ 5mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 8ns
  • Current - Reverse Leakage @ Vr: 5µA @ 75V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 175°C (Max)
Paquete: DO-204AH, DO-35, Axial
En existencias5.040
75V
150mA
720mV @ 5mA
Small Signal =< 200mA (Io), Any Speed
8ns
5µA @ 75V
4pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)
1N4154TAP
Vishay Semiconductor Diodes Division

DIODE GEN PURP 25V 150MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 25V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100nA @ 25V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-204AH, DO-35, Axial
En existencias6.752
25V
150mA
1V @ 30mA
Small Signal =< 200mA (Io), Any Speed
4ns
100nA @ 25V
4pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
1N4151TAP
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 150MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 50nA @ 50V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-204AH, DO-35, Axial
En existencias3.344
50V
150mA
1V @ 50mA
Small Signal =< 200mA (Io), Any Speed
4ns
50nA @ 50V
2pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
VS-T85HFL100S05
Vishay Semiconductor Diodes Division

DIODE MODULE 1KV 85A D-55

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 85A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 20mA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-55 T-Module
  • Supplier Device Package: D-55
  • Operating Temperature - Junction: -
Paquete: D-55 T-Module
En existencias6.944
1000V
85A
-
Fast Recovery =< 500ns, > 200mA (Io)
500ns
20mA @ 1000V
-
Chassis Mount
D-55 T-Module
D-55
-
VS-T85HFL60S02
Vishay Semiconductor Diodes Division

DIODE MODULE 600V 85A D-55

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 85A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 20mA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-55 T-Module
  • Supplier Device Package: D-55
  • Operating Temperature - Junction: -
Paquete: D-55 T-Module
En existencias5.824
600V
85A
-
Fast Recovery =< 500ns, > 200mA (Io)
200ns
20mA @ 600V
-
Chassis Mount
D-55 T-Module
D-55
-
VS-T70HF40
Vishay Semiconductor Diodes Division

DIODE MODULE 400V 70A D-55

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15mA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-55 T-Module
  • Supplier Device Package: D-55
  • Operating Temperature - Junction: -
Paquete: D-55 T-Module
En existencias4.656
400V
70A
-
Standard Recovery >500ns, > 200mA (Io)
-
15mA @ 400V
-
Chassis Mount
D-55 T-Module
D-55
-
VS-T40HF10
Vishay Semiconductor Diodes Division

DIODE MODULE 100V 40A D-55

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15mA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-55 T-Module
  • Supplier Device Package: D-55
  • Operating Temperature - Junction: -
Paquete: D-55 T-Module
En existencias5.936
100V
40A
-
Standard Recovery >500ns, > 200mA (Io)
-
15mA @ 100V
-
Chassis Mount
D-55 T-Module
D-55
-
VS-120NQ045PBF
Vishay Semiconductor Diodes Division

DIODE MODULE 45V 120A D-67

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 630mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10mA @ 45V
  • Capacitance @ Vr, F: 5200pF @ 5V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: D-67 HALF-PAK
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -
Paquete: D-67 HALF-PAK
En existencias3.504
45V
120A
630mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
10mA @ 45V
5200pF @ 5V, 1MHz
Chassis Mount
D-67 HALF-PAK
D-67
-
VS-25FR120M
Vishay Semiconductor Diodes Division

DIODE 25A 1200V M5X0.8 DO-4

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 78A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-203AA, DO-4, Stud
En existencias2.656
1200V
25A
1.3V @ 78A
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA
-65°C ~ 175°C
VS-CPU6006LHN3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2X30A TO-247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 42ns
  • Current - Reverse Leakage @ Vr: 30µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-247-3
En existencias2.640
600V
30A
1.75V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
42ns
30µA @ 600V
-
Through Hole
TO-247-3
TO-247AD
-55°C ~ 175°C
hot VS-EPU6006LHN3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 60A TO-247 L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 110ns
  • Current - Reverse Leakage @ Vr: 30µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-247-2
En existencias9.036
600V
60A
1.5V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
110ns
30µA @ 600V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
VS-C4PH6006LHN3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2X30A TO-247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-247-3
En existencias7.024
600V
30A
2V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
50µA @ 600V
-
Through Hole
TO-247-3
TO-247AD
-55°C ~ 175°C
VS-C4PU6006LHN3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2X30A TO-247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 65ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-247-3
En existencias5.648
600V
30A
1.6V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
65ns
50µA @ 600V
-
Through Hole
TO-247-3
TO-247AD
-55°C ~ 175°C
VS-E4PH6006LHN3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 60A TO-247 L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 68ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-247-2
En existencias2.864
600V
60A
2V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
68ns
50µA @ 600V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
VS-E4PU6006LHN3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 60A TO-247 L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 74ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-247-2
En existencias6.320
600V
60A
1.7V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
74ns
50µA @ 600V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
VS-CPU6006L-N3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2X30A TO-247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 42ns
  • Current - Reverse Leakage @ Vr: 30µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-247-3
En existencias3.248
600V
30A
1.75V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
42ns
30µA @ 600V
-
Through Hole
TO-247-3
TO-247AD
-55°C ~ 175°C
VS-C4PH3006LHN3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2X15A TO-247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 15µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-247-3
En existencias2.272
600V
15A
1.9V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
15µA @ 600V
-
Through Hole
TO-247-3
TO-247AD
-55°C ~ 175°C
VS-C4PU3006LHN3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2X15A TO-247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 15µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-247-3
En existencias5.632
600V
15A
1.55V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
15µA @ 600V
-
Through Hole
TO-247-3
TO-247AD
-55°C ~ 175°C
VS-EPU3006LHN3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 30A TO-247 L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45ns
  • Current - Reverse Leakage @ Vr: 30µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-247-2
En existencias4.464
600V
30A
2V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
30µA @ 600V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
VS-EPH3006LHN3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 30A TO-247 L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.65V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 26ns
  • Current - Reverse Leakage @ Vr: 30µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-247-2
En existencias3.376
600V
30A
2.65V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
26ns
30µA @ 600V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
VS-APH3006LHN3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 30A TO-247 L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.65V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 26ns
  • Current - Reverse Leakage @ Vr: 30µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-247-3
En existencias5.264
600V
30A
2.65V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
26ns
30µA @ 600V
-
Through Hole
TO-247-3
TO-247AD
-55°C ~ 175°C
VS-EPU6006L-N3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 60A TO-247 L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 110ns
  • Current - Reverse Leakage @ Vr: 30µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-247-2
En existencias5.248
600V
60A
1.5V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
110ns
30µA @ 600V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C