Página 292 - Vishay Semiconductor Diodes Division Productos - Diodos - Rectificadores
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Vishay Semiconductor Diodes Division Productos - Diodos - Rectificadores
- Simple

Registros 10.373
Página  292/371
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
FGP10CHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 2µA @ 150V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-204AL, DO-41, Axial
En existencias5.648
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 150V
25pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
FGP10C-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 2µA @ 150V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-204AL, DO-41, Axial
En existencias2.928
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 150V
25pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
FGP10BHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 2µA @ 100V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-204AL, DO-41, Axial
En existencias3.232
100V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 100V
25pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
FGP10B-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 2µA @ 100V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-204AL, DO-41, Axial
En existencias4.608
100V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 100V
25pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
EGP50GHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 5A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 75pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-201AA, DO-27, Axial
En existencias3.440
400V
5A
1.25V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
75pF @ 4V, 1MHz
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
EGP50G-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 5A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 75pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-201AA, DO-27, Axial
En existencias4.480
400V
5A
1.25V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
75pF @ 4V, 1MHz
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
EGP50FHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 5A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Capacitance @ Vr, F: 75pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-201AA, DO-27, Axial
En existencias3.328
300V
5A
1.25V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
75pF @ 4V, 1MHz
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
EGP50F-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 5A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Capacitance @ Vr, F: 75pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-201AA, DO-27, Axial
En existencias7.376
300V
5A
1.25V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
75pF @ 4V, 1MHz
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
EGP50DHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 5A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 95pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-201AA, DO-27, Axial
En existencias2.672
200V
5A
950mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
95pF @ 4V, 1MHz
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
EGP50D-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 5A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 95pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-201AA, DO-27, Axial
En existencias3.376
200V
5A
950mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
95pF @ 4V, 1MHz
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
EGP50CHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 5A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: 95pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-201AA, DO-27, Axial
En existencias4.288
150V
5A
950mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 150V
95pF @ 4V, 1MHz
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
EGP50C-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 5A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: 95pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-201AA, DO-27, Axial
En existencias5.712
150V
5A
950mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 150V
95pF @ 4V, 1MHz
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
EGP50BHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 5A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 95pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-201AA, DO-27, Axial
En existencias3.312
100V
5A
950mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
95pF @ 4V, 1MHz
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
EGP50B-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 5A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 95pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-201AA, DO-27, Axial
En existencias6.032
100V
5A
950mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
95pF @ 4V, 1MHz
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
EGP50AHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 5A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 95pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-201AA, DO-27, Axial
En existencias3.168
50V
5A
950mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
95pF @ 4V, 1MHz
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
EGP50A-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 5A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 95pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-201AA, DO-27, Axial
En existencias2.752
50V
5A
950mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
95pF @ 4V, 1MHz
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
EGP30GHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-201AA, DO-27, Axial
En existencias3.824
400V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
EGP30G-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-201AA, DO-27, Axial
En existencias4.608
400V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
EGP30FHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 3A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-201AA, DO-27, Axial
En existencias3.792
300V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
EGP30F-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 3A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-201AA, DO-27, Axial
En existencias5.776
300V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
EGP30DHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-201AA, DO-27, Axial
En existencias3.872
200V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
EGP30D-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-201AA, DO-27, Axial
En existencias7.392
200V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
EGP30CHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 3A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-201AA, DO-27, Axial
En existencias6.384
150V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 150V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
EGP30C-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 3A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-201AA, DO-27, Axial
En existencias3.536
150V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 150V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
EGP30BHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-201AA, DO-27, Axial
En existencias5.920
100V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
EGP30B-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-201AA, DO-27, Axial
En existencias4.016
100V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
EGP20GHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 2A DO204AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-204AC, DO-15, Axial
En existencias7.072
400V
2A
1.25V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
45pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-65°C ~ 150°C
EGP20FHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 2A DO204AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-204AC, DO-15, Axial
En existencias4.272
300V
2A
1.25V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
45pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-65°C ~ 150°C