Vishay Semiconductor Diodes Division Productos - Diodos - Rectificadores
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VSKEL240-25S30

Vishay Semiconductor Diodes Division

DIODE MODULE 2.5KV 240A MAGNAPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2500V
• Current - Average Rectified (Io): 240A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 50mA @ 2500V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK?
• Supplier Device Package: MAGN-A-PAK?
• Operating Temperature - Junction: -

Paquete: 3-MAGN-A-PAK?

VSKEL240-20S30

Vishay Semiconductor Diodes Division

DIODE MODULE 2KV 240A MAGN-A-PAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2000V
• Current - Average Rectified (Io): 240A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 50mA @ 2000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK?
• Supplier Device Package: MAGN-A-PAK?
• Operating Temperature - Junction: -

Paquete: 3-MAGN-A-PAK?

VSKEL240-14S20

Vishay Semiconductor Diodes Division

DIODE MODULE 1.4KV 250A MAGNAPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1400V
• Current - Average Rectified (Io): 250A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 50mA @ 1400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK?
• Supplier Device Package: MAGN-A-PAK?
• Operating Temperature - Junction: -

Paquete: 3-MAGN-A-PAK?

VSKEL240-12S20

Vishay Semiconductor Diodes Division

DIODE MODULE 1.2KV 250A MAGNAPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 250A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 50mA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK?
• Supplier Device Package: MAGN-A-PAK?
• Operating Temperature - Junction: -

Paquete: 3-MAGN-A-PAK?

VSKEL240-10S10

Vishay Semiconductor Diodes Division

DIODE MODULE 1KV 250A MAGN-A-PAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 250A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1µs
• Current - Reverse Leakage @ Vr: 50mA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK?
• Supplier Device Package: MAGN-A-PAK?
• Operating Temperature - Junction: -

Paquete: 3-MAGN-A-PAK?

VSKEL240-06S10

Vishay Semiconductor Diodes Division

DIODE MODULE 600V 250A MAGNAPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 250A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1µs
• Current - Reverse Leakage @ Vr: 50mA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK?
• Supplier Device Package: MAGN-A-PAK?
• Operating Temperature - Junction: -

Paquete: 3-MAGN-A-PAK?

HFA90NH40R

Vishay Semiconductor Diodes Division

DIODE MODULE 400V 90A HALF-PAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 90A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 90A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 140ns
• Current - Reverse Leakage @ Vr: 6µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67 HALF-PAK
• Supplier Device Package: HALF-PAK
• Operating Temperature - Junction: -

Paquete: D-67 HALF-PAK

HFA140NH60R

Vishay Semiconductor Diodes Division

DIODE MODULE 600V 140A HALF-PAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 140A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 140A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 140ns
• Current - Reverse Leakage @ Vr: 40µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67 HALF-PAK
• Supplier Device Package: HALF-PAK
• Operating Temperature - Junction: -

Paquete: D-67 HALF-PAK

HFA135NH40R

Vishay Semiconductor Diodes Division

DIODE MODULE 400V 135A HALF-PAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 135A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 135A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 120ns
• Current - Reverse Leakage @ Vr: 9µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67 HALF-PAK
• Supplier Device Package: HALF-PAK
• Operating Temperature - Junction: -

Paquete: D-67 HALF-PAK

HFA105NH60R

Vishay Semiconductor Diodes Division

DIODE MODULE 600V 105A HALF-PAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 105A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 105A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 140ns
• Current - Reverse Leakage @ Vr: 30µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67 HALF-PAK
• Supplier Device Package: HALF-PAK
• Operating Temperature - Junction: -

Paquete: D-67 HALF-PAK

8EWF12S

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 8A DPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 270ns
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

8EWF10S

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 8A DPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 270ns
• Current - Reverse Leakage @ Vr: 100µA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

SD253N04S15PV

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 250A DO205AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 250A
• Voltage - Forward (Vf) (Max) @ If: 1.38V @ 785A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5µs
• Current - Reverse Leakage @ Vr: 35mA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AB, DO-9, Stud
• Supplier Device Package: DO-205AB, DO-9
• Operating Temperature - Junction: -40°C ~ 125°C

Paquete: DO-205AB, DO-9, Stud

VSD3913

Vishay Semiconductor Diodes Division

DIODE MODULE 400V 30A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -

Paquete: DO-203AB, DO-5, Stud

IRD3912

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 30A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 62.8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 350ns
• Current - Reverse Leakage @ Vr: 80µA @ 300V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -40°C ~ 125°C

Paquete: DO-203AB, DO-5, Stud

IRD3911

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 30A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 62.8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 350ns
• Current - Reverse Leakage @ Vr: 80µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -40°C ~ 125°C

Paquete: DO-203AB, DO-5, Stud

IRD3910

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 30A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 62.8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 350ns
• Current - Reverse Leakage @ Vr: 80µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -40°C ~ 125°C

Paquete: DO-203AB, DO-5, Stud

IRD3909

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 30A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 62.8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 350ns
• Current - Reverse Leakage @ Vr: 80µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -40°C ~ 125°C

Paquete: DO-203AB, DO-5, Stud

IRD3903

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 20A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.65V @ 62.8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 350ns
• Current - Reverse Leakage @ Vr: 50µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -40°C ~ 125°C

Paquete: DO-203AB, DO-5, Stud

IRD3902

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 20A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.65V @ 62.8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 350ns
• Current - Reverse Leakage @ Vr: 50µA @ 300V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -40°C ~ 125°C

Paquete: DO-203AB, DO-5, Stud

IRD3901

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 20A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.65V @ 62.8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 350ns
• Current - Reverse Leakage @ Vr: 50µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -40°C ~ 125°C

Paquete: DO-203AB, DO-5, Stud

IRD3900

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 20A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.65V @ 62.8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 350ns
• Current - Reverse Leakage @ Vr: 50µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -40°C ~ 125°C

Paquete: DO-203AB, DO-5, Stud

30HFU-600

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 30A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.45V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 80ns
• Current - Reverse Leakage @ Vr: 35µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -40°C ~ 125°C

Paquete: DO-203AB, DO-5, Stud

30HFU-400

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 30A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.45V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 80ns
• Current - Reverse Leakage @ Vr: 35µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -40°C ~ 125°C

Paquete: DO-203AB, DO-5, Stud

30HFU-300

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 30A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.45V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 80ns
• Current - Reverse Leakage @ Vr: 35µA @ 300V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -40°C ~ 125°C

Paquete: DO-203AB, DO-5, Stud

30HFU-200

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 30A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.45V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 80ns
• Current - Reverse Leakage @ Vr: 35µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -40°C ~ 125°C

Paquete: DO-203AB, DO-5, Stud

30HFU-100

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 30A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.45V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 80ns
• Current - Reverse Leakage @ Vr: 35µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -40°C ~ 125°C

Paquete: DO-203AB, DO-5, Stud

SD153N08S10PV

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 150A DO205AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 150A
• Voltage - Forward (Vf) (Max) @ If: 1.55V @ 470A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1µs
• Current - Reverse Leakage @ Vr: 35mA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AC, DO-30, Stud
• Supplier Device Package: DO-205AC (DO-30)
• Operating Temperature - Junction: -40°C ~ 125°C

Paquete: DO-205AC, DO-30, Stud