Toshiba Semiconductor and Storage Productos

TK8A55DA(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 550V 7.5A TO-220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 550V
• Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 1.07 Ohm @ 3.8A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

Paquete: TO-220-3 Full Pack

2SB1495,Q(J

Toshiba Semiconductor and Storage

TRANS PNP 3A 100V TO220-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 100V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
• Power - Max: 2W
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220NIS

Paquete: TO-220-3 Full Pack

2SA949-Y(T6ONK1,FM

Toshiba Semiconductor and Storage

TRANS PNP 50MA 150V TO226-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 150V
• Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Power - Max: 800mW
• Frequency - Transition: 120MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

2SA1837,HFEYHF(J

Toshiba Semiconductor and Storage

TRANS PNP 1A 230V TO220-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 230V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
• Power - Max: 2W
• Frequency - Transition: 70MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220NIS

Paquete: TO-220-3 Full Pack

RN1109(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W SSM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 22k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

Paquete: SC-75, SOT-416

1SS389,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 100MA ESC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 50mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 10V
• Capacitance @ Vr, F: 25pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: ESC
• Operating Temperature - Junction: 125°C (Max)

Paquete: SC-79, SOD-523

TA58M05S(YAZK,AQ)

Toshiba Semiconductor and Storage

IC REG LINEAR 500MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 500mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: LSTM

Paquete: TO-220-3 Full Pack

TCR2LE30,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 3V 200MA ESV

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.3V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 2µA
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: ESV

Paquete: SOT-553

TB67S209FTG(O,EL)

Toshiba Semiconductor and Storage

IC STEP MOTOR DRVR PAR 48WQFN

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: 1 ~ 1/32
• Applications: General Purpose
• Current - Output: 3A
• Voltage - Supply: 4.75 V ~ 5.25 V
• Voltage - Load: 10 V ~ 47 V
• Operating Temperature: -20°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-WFQFN Exposed Pad
• Supplier Device Package: 48-WQFN (7x7)

Paquete: 48-WFQFN Exposed Pad

TB6608FNG,C8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 20SSOP

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: 1, 1/2, 1/4, 1/8
• Applications: General Purpose
• Current - Output: 600mA
• Voltage - Supply: 2.7 V ~ 5.5 V
• Voltage - Load: 2.5 V ~ 13.5 V
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-LSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-SSOP

Paquete: 20-LSSOP (0.173", 4.40mm Width)

74VHC123AFT

Toshiba Semiconductor and Storage

IC MULTIBRATOR DUAL 16TSSOP

• Logic Type: Monostable
• Independent Circuits: 2
• Schmitt Trigger Input: No
• Propagation Delay: 9.6ns
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

Paquete: 16-TSSOP (0.173", 4.40mm Width)

74HC126D(BJ)

Toshiba Semiconductor and Storage

IC BUFFER DVR TRI-ST QD 14SOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 4
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 7.8mA, 7.8mA
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 14-SOP

Paquete: 14-SOIC (0.154", 3.90mm Width)

TL1WK-LW1,L

Toshiba Semiconductor and Storage

LED LETERAS WARM WHT 3000K 2SMD

• Color: White, Warm
• CCT (K): 3000K
• Flux @ 85°C, Current - Test: -
• Flux @ 25°C, Current - Test: 19 lm (17 lm ~ 23 lm)
• Current - Test: 60mA
• Voltage - Forward (Vf) (Typ): 2.8V
• Lumens/Watt @ Current - Test: 113 lm/W
• CRI (Color Rendering Index): 80
• Current - Max: 180mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, No Lead
• Supplier Device Package: SMD
• Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm)
• Height - Seated (Max): 0.015" (0.39mm)

Paquete: 2-SMD, No Lead

TLBD1100B(T11)

Toshiba Semiconductor and Storage

LED BLUE 2PLCC SMD

• Color: Blue
• Configuration: -
• Lens Color: -
• Lens Transparency: -
• Millicandela Rating: 70mcd
• Lens Style/Size: Round with Flat Top, 2.40mm
• Voltage - Forward (Vf) (Typ): 3.3V
• Current - Test: 20mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Wavelength - Dominant: 470nm
• Wavelength - Peak: 468nm
• Features: -
• Package / Case: 2-PLCC
• Supplier Device Package: SMD
• Size / Dimension: 3.20mm L x 2.80mm W
• Height (Max): 2.10mm

Paquete: 2-PLCC

TC35679FSG-002

Toshiba Semiconductor and Storage

V4.2 BLUETOOTH SMART IC IMPLEMEN

• Type: TxRx + MCU
• RF Family/Standard: Bluetooth
• Protocol: Bluetooth v4.2
• Modulation: -
• Frequency: 2.4GHz
• Data Rate (Max): -
• Power - Output: 0dBm
• Sensitivity: -93dBm
• Memory Size: -
• Serial Interfaces: I2C, SPI, UART
• GPIO: -
• Voltage - Supply: 1.8 V ~ 3.6 V
• Current - Receiving: 3.3mA
• Current - Transmitting: 3.3mA
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFQFN Exposed Pad

Paquete: 60-VFQFN Exposed Pad

TLP185(GB-TPL,SE

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 100% @ 5mA
• Current Transfer Ratio (Max): 600% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (4 Leads), Gull Wing
• Supplier Device Package: 6-SO, 4 Lead

Paquete: 6-SMD (4 Leads), Gull Wing

74HC245D

Toshiba Semiconductor and Storage

IC TRANSCVR NON-INVERT 6V 20SOIC

• Logic Type: Transceiver, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 8
• Input Type: -
• Output Type: 3-State
• Current - Output High, Low: 7.8mA, 7.8mA
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 20-SOIC

Paquete: 20-SOIC (0.295", 7.50mm Width)

TC7MBL3245CFK(EL)

Toshiba Semiconductor and Storage

X34 GENERAL-PURPOSE BUS SWITCH L

• Type: Bus Switch
• Circuit: 8 x 1:1
• Independent Circuits: 1
• Current - Output High, Low: -
• Voltage Supply Source: Single Supply
• Voltage - Supply: 1.65V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-VFSOP (0.118", 3.00mm Width)
• Supplier Device Package: 20-VSSOP

Paquete: 20-VFSOP (0.118", 3.00mm Width)

TCR2LF21,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT2.1V DROPOUT220MV

• Output Configuration: -
• Output Type: -
• Number of Regulators: -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: -
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

SSM3J374R-LXHF

Toshiba Semiconductor and Storage

SMOS P-CH VDSS:-30V VGSS:-20/+10

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
• Vgs (Max): +10V, -20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23F
• Package / Case: SOT-23-3 Flat Leads

Paquete: -

RN2901-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7kOhms
• Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

Paquete: -

RN2425-TE85L-F

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.8A SMINI

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 800 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): -
• Resistor - Emitter Base (R2) (Ohms): 10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200 MHz
• Power - Max: 200 mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

Paquete: -

CRF03A-LQ-M

Toshiba Semiconductor and Storage

DIODE GEN PURP 600V 700MA S-FLAT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 700mA
• Voltage - Forward (Vf) (Max) @ If: 2 V @ 700 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100 ns
• Current - Reverse Leakage @ Vr: 50 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: S-FLAT (1.6x3.5)
• Operating Temperature - Junction: 150°C

Paquete: -

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TCR1HF18B-LM-CT

Toshiba Semiconductor and Storage

40V 150MA LDO LOW IQ 1UA SOT-25

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 36V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.06V @ 150mA
• Current - Output: 150mA
• Current - Quiescent (Iq): 1.6 µA
• Current - Supply (Max): -
• PSRR: 60dB (1kHz)
• Control Features: Current Limit, Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

Paquete: -

TK25S06N1L-LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 25A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 57W (Tc)
• Rds On (Max) @ Id, Vgs: 18.5mOhm @ 12.5A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK+
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paquete: -

SSM5N16FU-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.1A USV

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
• Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
• Vgs(th) (Max) @ Id: 1.1V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
• Power - Max: 200mW (Ta)
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: USV

Paquete: -

TPCA8109-TE12L1-V

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 24A 8SOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V
• Vgs (Max): +20V, -25V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
• Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

Paquete: -

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TK2P90E-RQ

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DPA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900 V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 80W (Tc)
• Rds On (Max) @ Id, Vgs: 5.9Ohm @ 1A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paquete: -