Toshiba Semiconductor and Storage Productos

SSM3K345R,LF

Toshiba Semiconductor and Storage

SMALL LOW ON RESISTANCE MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 33 mOhm @ 4A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: -
• Package / Case: -

Paquete: -

2SA1955FVBTPL3Z

Toshiba Semiconductor and Storage

TRANS PNP 12V 0.4A VESM

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 400mA
• Voltage - Collector Emitter Breakdown (Max): 12V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
• Power - Max: 100mW
• Frequency - Transition: 130MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VESM

Paquete: SOT-723

2SC4116-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANS NPN 50V 150MA SC70

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
• Power - Max: 100mW
• Frequency - Transition: 80MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

Paquete: SC-70, SOT-323

2SC4207-GR(TE85L,F

Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A SMV

• Transistor Type: 2 NPN (Dual) Common Emitter
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
• Power - Max: 300mW
• Frequency - Transition: 80MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

Paquete: SC-74A, SOT-753

RN2902FE,LF(CT

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W ES6

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

Paquete: SOT-563, SOT-666

CTS05S30,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 500MA CST2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 340mV @ 100mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150µA @ 10V
• Capacitance @ Vr, F: 55pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: CST2
• Operating Temperature - Junction: 125°C (Max)

Paquete: SOD-882

TA58L05S,LS2TOKQ(J

Toshiba Semiconductor and Storage

IC REG LINEAR 250MA 3HSIP

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 250mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: 3-HSIP

Paquete: TO-220-3 Full Pack

TCR2EN18,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 1.8V 200MA 4-SDFN

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 60µA
• PSRR: 73dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

Paquete: 4-XFDFN Exposed Pad

TCR2LF32,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 3.2V 200MA SMV

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.2V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 2µA
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

Paquete: SC-74A, SOT-753

TBD62003AFWG,EL

Toshiba Semiconductor and Storage

IC LOAD SWITCH 7CH 0.5A 16PSOP

• Switch Type: General Purpose
• Number of Outputs: 7
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 50V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2.8A
• Rds On (Typ): -
• Input Type: Inverting
• Features: -
• Fault Protection: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOP

Paquete: 16-SOIC (0.154", 3.90mm Width)

TC74VHC138F(EL,K,F

Toshiba Semiconductor and Storage

IC DECODER 1 X 3:8 16SOP

• Type: Decoder
• Circuit: 1 x 3:8
• Independent Circuits: 1
• Current - Output High, Low: 8mA, 8mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 16-SOP

Paquete: 16-SOIC (0.209", 5.30mm Width)

TC7SH17FU,LJ(CT

Toshiba Semiconductor and Storage

IC BUFFER SCHMITT 5-SSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: Schmitt Trigger
• Output Type: Push-Pull
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: USV

Paquete: 5-TSSOP, SC-70-5, SOT-353

TD62783AFNG(O,S)

Toshiba Semiconductor and Storage

IC DRIVER DARL SOURCE 8CH 18SSOP

• Type: Driver
• Protocol: -
• Number of Drivers/Receivers: 8/0
• Duplex: -
• Receiver Hysteresis: -
• Data Rate: -
• Voltage - Supply: 5V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 18-LSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 18-SSOP

Paquete: 18-LSSOP (0.173", 4.40mm Width)

TLP174GA(TP,F)

Toshiba Semiconductor and Storage

RELAY SOLID STATE PC MNT

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 35 Ohm
• Load Current: 120mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 400 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 4-SOP (0.173", 4.40mm)
• Supplier Device Package: 4-SOP (2.54mm)
• Relay Type: Relay

Paquete: 4-SOP (0.173", 4.40mm)

TLP290(E)

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 50% @ 5mA
• Current Transfer Ratio (Max): 400% @ 5mA
• Turn On / Turn Off Time (Typ): 7µs, 7µs
• Rise / Fall Time (Typ): 4µs, 7µs
• Input Type: AC, DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 4-SOIC (0.179", 4.55mm)
• Supplier Device Package: 4-SO

Paquete: 4-SOIC (0.179", 4.55mm)

TLP185(GB-TPR,E)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 100% @ 5mA
• Current Transfer Ratio (Max): 400% @ 5mA
• Turn On / Turn Off Time (Typ): 9µs, 9µs
• Rise / Fall Time (Typ): 5µs, 9µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (4 Leads), Gull Wing
• Supplier Device Package: 6-SO, 4 Lead

Paquete: 6-SMD (4 Leads), Gull Wing

TLP785(GRH-TP6,F)

Toshiba Semiconductor and Storage

OPTOISOLATR 5KV TRANSISTOR 4-SMD

• Number of Channels: 1
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (Min): 150% @ 5mA
• Current Transfer Ratio (Max): 300% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.15V
• Current - DC Forward (If) (Max): 60mA
• Vce Saturation (Max): 400mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: 4-SMD

Paquete: 4-SMD, Gull Wing

TLP152(TPL,E

Toshiba Semiconductor and Storage

OPTOISO 3.75KV GATE DRIVER 6SO-5

• Technology: Optical Coupling
• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Common Mode Transient Immunity (Min): 20kV/µs
• Propagation Delay tpLH / tpHL (Max): 145ns, 165ns
• Pulse Width Distortion (Max): 50ns
• Rise / Fall Time (Typ): 18ns, 22ns
• Current - Output High, Low: 2A, 2A
• Current - Peak Output: 2.5A
• Voltage - Forward (Vf) (Typ): 1.57V
• Current - DC Forward (If) (Max): 20mA
• Voltage - Supply: 10 V ~ 30 V
• Operating Temperature: -40°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
• Supplier Device Package: 6-SO, 5 Lead
• Approvals: -

Paquete: 6-SOIC (0.179", 4.55mm Width) 5 Leads

TC7SBL384CFU,LF(CT

Toshiba Semiconductor and Storage

IC SWITCH SPST SINGLE USV

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 1
• On-State Resistance (Max): 18Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): 1.65V ~ 3.6V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 6ns, 6ns
• -3db Bandwidth: -
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 3.5pF
• Current - Leakage (IS(off)) (Max): 1µA
• Crosstalk: -
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: USV

Paquete: 5-TSSOP, SC-70-5, SOT-353

HN1C03FU-B-LF

Toshiba Semiconductor and Storage

NPN + NPN IND. TRANSISTOR VCEO20

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 300mA
• Voltage - Collector Emitter Breakdown (Max): 20V
• Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
• Power - Max: 200mW
• Frequency - Transition: 30MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

Paquete: -

TRS4E65F-S1Q

Toshiba Semiconductor and Storage

DIODE SIL CARB 650V 4A TO220-2L

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 4 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 20 µA @ 650 V
• Capacitance @ Vr, F: 16pF @ 650V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2L
• Operating Temperature - Junction: 175°C (Max)

Paquete: -

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RN2714-LF

Toshiba Semiconductor and Storage

PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 1kOhms
• Resistor - Emitter Base (R2) (Ohms): 10kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: USV

Paquete: -

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TCR2LN13-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=1.3V I=200MA

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.11V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 2 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

Paquete: -

7UL1G08FS-RF-B

Toshiba Semiconductor and Storage

L-MOS LVP IC VCC: 2.3V-3.6V, SOT

• Logic Type: AND Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 0.9V ~ 3.6V
• Current - Quiescent (Max): 1 µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.7V ~ 0.8V
• Logic Level - High: 1.7V ~ 2V
• Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: fSV
• Package / Case: SOT-953

Paquete: -

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TCR3DM285-LF-SE

Toshiba Semiconductor and Storage

LDO REG IOUT: 300MA VIN: 6V VOUT

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.85V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.25V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-UDFN Exposed Pad
• Supplier Device Package: 4-DFN (1x1)

Paquete: -

RN2113-LXHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 47 kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

Paquete: -

TCR3RM18A-LF

Toshiba Semiconductor and Storage

IC REG LINEAR 1.8V 300MA 4DFNC

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.13V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 100dB (1kHz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: 4-DFNC (1x1)

Paquete: -

HN2D02FU-LF

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 80MA US6

• Diode Configuration: 3 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80 V
• Current - Average Rectified (Io) (per Diode): 80mA
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4 ns
• Current - Reverse Leakage @ Vr: 500 nA @ 80 V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

Paquete: -