Toshiba Semiconductor and Storage Productos

2SK3313(Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 500V 12A TO220NIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 10V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 620 mOhm @ 6A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220NIS
• Package / Case: TO-220-3 Full Pack

Paquete: TO-220-3 Full Pack

TPH3R704PL,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 92A TSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 0.2mA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 960mW (Ta), 81W (Tc)
• Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 46A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

Paquete: 8-PowerVDFN

SSM3K344R,LF

Toshiba Semiconductor and Storage

SMALL LOW ON RESISTANCE MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4V
• Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 71 mOhm @ 3A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: -
• Package / Case: -

Paquete: -

TPH2R506PL,L1Q

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 100A
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5435pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 134W (Tc)
• Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 30A, 4.5V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

Paquete: 8-PowerVDFN

2SC4793,YHF(J

Toshiba Semiconductor and Storage

TRANS NPN 1A 230V TO220-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 230V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
• Power - Max: 2W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220NIS

Paquete: TO-220-3 Full Pack

2SC2229-O(TE6,F,M)

Toshiba Semiconductor and Storage

TRANS NPN 50MA 150V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 150V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Power - Max: 800mW
• Frequency - Transition: 120MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

HN1B04FE-GR,LF

Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A ES6

• Transistor Type: NPN, PNP
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
• Power - Max: 100mW
• Frequency - Transition: 80MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

Paquete: SOT-563, SOT-666

1SV304TPH3F

Toshiba Semiconductor and Storage

DIODE VARACTOR 10V USC

• Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
• Capacitance Ratio: 3
• Capacitance Ratio Condition: C1/C4
• Voltage - Peak Reverse (Max): 10V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: USC

Paquete: SC-76, SOD-323

1SS300,LF

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA USM

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

Paquete: SC-70, SOT-323

TCR5AM065,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 0.65V 500MA 5DFN

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 0.65V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 500mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 55µA ~ 68µA
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: 5-DFNB (1.2x1.2)

Paquete: 4-XDFN Exposed Pad

TB67S109AFNG,EL

Toshiba Semiconductor and Storage

IC STEP MOTOR DRVR PAR 48HTSSOP

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: 1 ~ 1/32
• Applications: General Purpose
• Current - Output: 3A
• Voltage - Supply: 4.75 V ~ 5.25 V
• Voltage - Load: 10 V ~ 47 V
• Operating Temperature: -20°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
• Supplier Device Package: 48-HTSSOP

Paquete: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad

TC7SET125FU,LJ(CT

Toshiba Semiconductor and Storage

IC BUFF NON-INVERT 5.5V USV

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: USV

Paquete: 5-TSSOP, SC-70-5, SOT-353

LT056DET2S00-1F000

Toshiba Semiconductor and Storage

LCD 5.6INCH 1024X600 W-SVGA

• Display Type: TFT - Color
• Display Mode: Transmissive
• Touchscreen: -
• Diagonal Screen Size: 5.6" (142.24mm)
• Viewing Area: 122.88mm W x 72.00mm H
• Backlight: LED - White
• Dot Pixels: 1024 x 600
• Interface: LVDS
• Graphics Color: Red, Green, Blue (RGB)
• Background Color: -

Paquete: -

TLP3341(TP15,F)

Toshiba Semiconductor and Storage

PHOTORELAY; LOW COFF / ULTRA-LOW

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 10 Ohm
• Load Current: 140mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 40 V
• Mounting Type: Surface Mount
• Termination Style: SMD (SMT) Tab
• Package / Case: 4-SMD (0.128", 3.25mm)
• Supplier Device Package: 4-USOP
• Relay Type: Relay

Paquete: 4-SMD (0.128", 3.25mm)

TLP781(F)

Toshiba Semiconductor and Storage

OPTOISOLATR 5KV TRANSISTOR 4-DIP

• Number of Channels: 1
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (Min): 50% @ 5mA
• Current Transfer Ratio (Max): 600% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.15V
• Current - DC Forward (If) (Max): 60mA
• Vce Saturation (Max): 400mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Supplier Device Package: 4-DIP

Paquete: 4-DIP (0.300", 7.62mm)

TLP291-4(TP,E)

Toshiba Semiconductor and Storage

OPTOISOLTR 2.5KV 4CH TRANS 16-SO

• Number of Channels: 4
• Voltage - Isolation: 2500Vrms
• Current Transfer Ratio (Min): 50% @ 5mA
• Current Transfer Ratio (Max): 400% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.2V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 400mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.179", 4.55mm Width)
• Supplier Device Package: 16-SO

Paquete: 16-SOIC (0.179", 4.55mm Width)

TLP293(GB-TPL,E

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 100% @ 5mA
• Current Transfer Ratio (Max): 600% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 4-SOIC (0.179", 4.55mm)
• Supplier Device Package: 4-SO

Paquete: 4-SOIC (0.179", 4.55mm)

TLP351(TP1,F)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV GATE DRIVER 8SMD

• Technology: Optical Coupling
• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Common Mode Transient Immunity (Min): 10kV/µs
• Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
• Pulse Width Distortion (Max): -
• Rise / Fall Time (Typ): 50ns, 50ns
• Current - Output High, Low: 400mA, 400mA
• Current - Peak Output: 600mA
• Voltage - Forward (Vf) (Typ): 1.55V
• Current - DC Forward (If) (Max): 20mA
• Voltage - Supply: 10 V ~ 30 V
• Operating Temperature: -40°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Gull Wing
• Supplier Device Package: 8-SMD
• Approvals: -

Paquete: 8-SMD, Gull Wing

TB6585FTG,8,EL

Toshiba Semiconductor and Storage

BRUSHLESS MOTOR DRIVER IC, SENSO

• Motor Type - Stepper: -
• Motor Type - AC, DC: -
• Function: -
• Output Configuration: -
• Interface: -
• Technology: -
• Step Resolution: -
• Applications: -
• Current - Output: -
• Voltage - Supply: -
• Voltage - Load: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

TB67S141NG

Toshiba Semiconductor and Storage

2 PHASE UNIPOLAR STEPPING MOTOR

• Motor Type - Stepper: Unipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (2)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: 1, 1/2, 1/4
• Applications: General Purpose
• Current - Output: 3A
• Voltage - Supply: 4.75 V ~ 5.25 V
• Voltage - Load: 10 V ~ 40 V
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 24-SDIP (0.300", 7.62mm)
• Supplier Device Package: 24-SDIP

Paquete: 24-SDIP (0.300", 7.62mm)

74HCT240D

Toshiba Semiconductor and Storage

IC BUFFER INVERT 5.5V 20SOIC

• Logic Type: Buffer, Inverting
• Number of Elements: 2
• Number of Bits per Element: 4
• Input Type: -
• Output Type: 3-State
• Current - Output High, Low: 6mA, 6mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 20-SOIC

Paquete: 20-SOIC (0.295", 7.50mm Width)

74VHC4020FT

Toshiba Semiconductor and Storage

X34 PB-F BINARY COUNTER COUNTER

• Logic Type: Binary Counter
• Direction: Up
• Number of Elements: 1
• Number of Bits per Element: 14
• Reset: Asynchronous
• Timing: -
• Count Rate: 210MHz
• Trigger Type: Negative Edge
• Voltage - Supply: 2V ~ 5.5V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOPB

Paquete: 16-TSSOP (0.173", 4.40mm Width)

RN2405-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SMINI

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 2.2 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200 MHz
• Power - Max: 200 mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

Paquete: -

SSM3J145TU-LXHF

Toshiba Semiconductor and Storage

SMOS P-CH VDSS:-20V VGSS:-8/+6V

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
• Vgs (Max): +6V, -8V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 103mOhm @ 1A, 4.5V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: UFM
• Package / Case: 3-SMD, Flat Leads

Paquete: -

TCR3UF105A-LM-CT

Toshiba Semiconductor and Storage

IC REG LINEAR 1.05V 300MA SMV

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.05V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.057V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 580 nA
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

Paquete: -

SSM6J422TU-LF

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 4A UF6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
• Vgs (Max): +6V, -8V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: UF6
• Package / Case: 6-SMD, Flat Leads

Paquete: -

HN1B04FU-GR-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + NPN TR VCEO:-50

• Transistor Type: 1 NPN, 1 PNP
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
• Power - Max: 200mW
• Frequency - Transition: 150MHz, 120MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

Paquete: -

TB67S128FTG-EL

Toshiba Semiconductor and Storage

STEPPE RMOTOR DRIVER IC WITH ACT

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: PWM
• Technology: Power MOSFET
• Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32, 1/128
• Applications: General Purpose
• Current - Output: 5A
• Voltage - Supply: 4.75V ~ 5.25V
• Voltage - Load: 6.5V ~ 44V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 64-VFQFN Exposed Pad
• Supplier Device Package: 64-VQFN (9x9)

Paquete: -