Toshiba Semiconductor and Storage Productos

SSM3K303T(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 2.9A TSM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.6V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4V
• Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 83 mOhm @ 1.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSM
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paquete: TO-236-3, SC-59, SOT-23-3

2SK2507(F)

Toshiba Semiconductor and Storage

MOSFET N-CH 50V 25A TO220NIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 46 mOhm @ 12A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220NIS
• Package / Case: TO-220-3 Full Pack

Paquete: TO-220-3 Full Pack

SSM3K15ACT(TPL3)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 0.1A CST3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
• Vgs(th) (Max) @ Id: 1.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 100mW (Ta)
• Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: CST3
• Package / Case: SC-101, SOT-883

Paquete: SC-101, SOT-883

2SC5171(LBS2MATQ,M

Toshiba Semiconductor and Storage

TRANS NPN 2A 180V TO220-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 180V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
• Current - Collector Cutoff (Max): 5µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
• Power - Max: 2W
• Frequency - Transition: 200MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220NIS

Paquete: TO-220-3 Full Pack

2SC2229-Y(SHP,F,M)

Toshiba Semiconductor and Storage

TRANS NPN 50MA 150V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 150V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Power - Max: 800mW
• Frequency - Transition: 120MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

RN2965(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

Paquete: 6-TSSOP, SC-88, SOT-363

RN1905,LF(CT

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

Paquete: 6-TSSOP, SC-88, SOT-363

CRS01(TE85L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A SFLAT

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 360mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1.5mA @ 30V
• Capacitance @ Vr, F: 40pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: S-FLAT (1.6x3.5)
• Operating Temperature - Junction: -40°C ~ 125°C

Paquete: SOD-123F

TA78L015AP,6MURF(M

Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -30°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

Paquete: TO-226-3, TO-92-3 Long Body

TCK106G,LF

Toshiba Semiconductor and Storage

IC POWER DIST LOAD SWITCH 4WCSP

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 1.1 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1A
• Rds On (Typ): 49 mOhm
• Input Type: Non-Inverting
• Features: Slew Rate Controlled
• Fault Protection: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 4-UFBGA
• Supplier Device Package: 4-WCSP (0.79x0.79)

Paquete: 4-UFBGA

TC58CVG0S3HQAIE

Toshiba Semiconductor and Storage

1GB SERIAL NAND 24NM SOP16 3.3V

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 1Gb (128M x 8)
• Memory Interface: SPI - Quad I/O
• Clock Frequency: 104MHz
• Write Cycle Time - Word, Page: -
• Access Time: 155µs
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOP

Paquete: 16-SOIC (0.295", 7.50mm Width)

TC74HC02AFELF

Toshiba Semiconductor and Storage

IC GATE NOR 4CH 2-INP 14SOP

• Logic Type: NOR Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 5.2mA, 5.2mA
• Logic Level - Low: 0.5 V ~ 1.8 V
• Logic Level - High: 1.5 V ~ 4.2 V
• Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SOP
• Package / Case: 14-SOIC (0.173", 4.40mm Width)

Paquete: 14-SOIC (0.173", 4.40mm Width)

TC7SH02F,LJ(CT

Toshiba Semiconductor and Storage

IC GATE NOR 2-INPUT 5-SSOP

• Logic Type: NOR Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.5V
• Logic Level - High: 1.5V
• Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: SMV
• Package / Case: SC-74A, SOT-753

Paquete: SC-74A, SOT-753

TC74VHCT574AFT(ELM

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 20TSSOP

• Function: Standard
• Type: D-Type
• Output Type: Tri-State, Non-Inverted
• Number of Elements: 1
• Number of Bits per Element: 8
• Clock Frequency: 130MHz
• Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Iq): 4µA
• Input Capacitance: 4pF
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)

Paquete: 20-TSSOP (0.173", 4.40mm Width)

TCS11SLU(TE85L,F)

Toshiba Semiconductor and Storage

MAGNETIC SWITCH UNIPOLAR UFV

• Function: Unipolar Switch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 2.5mT Trip, 0.3mT Release
• Test Condition: 25°C
• Voltage - Supply: 2.3 V ~ 3.6 V
• Current - Supply (Max): 1.3mA
• Current - Output (Max): 5mA
• Output Type: Open Drain
• Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 6-SMD (5 Leads), Flat Lead
• Supplier Device Package: UFV

Paquete: 6-SMD (5 Leads), Flat Lead

TLP184(BL-TPL,SE

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 200% @ 5mA
• Current Transfer Ratio (Max): 600% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: AC, DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (4 Leads), Gull Wing
• Supplier Device Package: 6-SO, 4 Lead

Paquete: 6-SMD (4 Leads), Gull Wing

TLP137(F)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-MFSOP

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 100% @ 1mA
• Current Transfer Ratio (Max): 1200% @ 1mA
• Turn On / Turn Off Time (Typ): 10µs, 8µs
• Rise / Fall Time (Typ): 8µs, 8µs
• Input Type: DC
• Output Type: Transistor with Base
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.15V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 400mV
• Operating Temperature: -55°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.173", 4.40mm Width) 5 Leads
• Supplier Device Package: 6-MFSOP, 5 Lead

Paquete: 6-SOIC (0.173", 4.40mm Width) 5 Leads

74VHCT574AFT

Toshiba Semiconductor and Storage

IC FF D-TYPE SNGL 8BIT 20TSSOP

• Function: Standard
• Type: D-Type
• Output Type: Tri-State, Non-Inverted
• Number of Elements: 1
• Number of Bits per Element: 8
• Clock Frequency: 140MHz
• Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Iq): 4µA
• Input Capacitance: 4pF
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)

Paquete: 20-TSSOP (0.173", 4.40mm Width)

74VHC9151FT

Toshiba Semiconductor and Storage

X34 PB-F SCHMITT BUFFER BUFFER V

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 9
• Input Type: Schmitt Trigger
• Output Type: -
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2V ~ 5.5V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOPB

Paquete: 20-TSSOP (0.173", 4.40mm Width)

RN1408-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SMINI

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 22 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 200 mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

Paquete: -

TCR3UF33A-LM-CT

Toshiba Semiconductor and Storage

(LDO) LINEAR VOLTAGE REG, VIN: 6

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.287V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 680 nA
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

Paquete: -

RFM01U7P-TE12L-F

Toshiba Semiconductor and Storage

RF MOSFET 7.2V PW-MINI

• Transistor Type: MOSFET (Metal Oxide)
• Frequency: 520MHz
• Gain: 10.8dB
• Voltage - Test: 7.2 V
• Current Rating: 1A
• Noise Figure: -
• Current - Test: 100 mA
• Power - Output: 1.2W
• Voltage - Rated: 20 V
• Package / Case: TO-243AA
• Supplier Device Package: PW-MINI

Paquete: -

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CMZ16-TE12L-Q-M

Toshiba Semiconductor and Storage

DIODE ZENER 16V 2W MFLAT

• Voltage - Zener (Nom) (Vz): 16 V
• Tolerance: ±10%
• Power - Max: 2 W
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 10 µA @ 11 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: M-FLAT (2.4x3.8)

Paquete: -

SSM3J66MFV-L3F

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 800MA VESM

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
• Vgs (Max): +6V, -8V
• FET Feature: -
• Power Dissipation (Max): 150mW (Ta)
• Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: VESM
• Package / Case: SOT-723

Paquete: -

RN1103MFV-L3XHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 22 kOhms
• Resistor - Emitter Base (R2) (Ohms): 22 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VESM

Paquete: -

TC7SZ34FE-LM

Toshiba Semiconductor and Storage

IC BUFFER NON-INVERT 5.5V ESV

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 32mA, 32mA
• Voltage - Supply: 1.65V ~ 5.5V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: ESV

Paquete: -

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SSM3K35CT-L3F

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 180MA CST3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 100mW (Ta)
• Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: CST3
• Package / Case: SC-101, SOT-883

Paquete: -

RN1411-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SMINI

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 10 kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250 MHz
• Power - Max: 200 mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

Paquete: -