Imagen |
Nº de pieza |
Fabricantes |
Descripción |
Paquete |
En existencias |
Cantidad |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage |
MOSFET N CH 120V 88A TO-220
|
Paquete: TO-220-3 |
En existencias6.736 |
|
MOSFET (Metal Oxide) | 120V | 88A (Tc) | 10V | 4V @ 1mA | 52nC @ 10V | 3100pF @ 60V | ±20V | - | 140W (Tc) | 9.4 mOhm @ 21A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 50V 100MA USM
|
Paquete: SC-70, SOT-323 |
En existencias5.264 |
|
MOSFET (Metal Oxide) | 50V | 100mA (Ta) | - | 1.5V @ 1µA | - | 7pF @ 3V | - | - | 150mW (Ta) | 20 Ohm @ 10mA, 4V | - | Surface Mount | USM | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 9A 8TSON-ADV
|
Paquete: 8-PowerVDFN |
En existencias15.120 |
|
MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 2.3V @ 100µA | 9.5nC @ 10V | 690pF @ 10V | ±20V | - | 700mW (Ta), 15W (Tc) | 25 mOhm @ 4.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A 8TSON-ADV
|
Paquete: 8-PowerVDFN |
En existencias3.184 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 2.3V @ 100µA | 15nC @ 10V | 1100pF @ 10V | ±20V | - | 700mW (Ta), 17W (Tc) | 15 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 13A 8TSON-ADV
|
Paquete: 8-PowerVDFN |
En existencias273.600 |
|
MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 2.3V @ 200µA | 20nC @ 10V | 1350pF @ 10V | ±20V | - | 700mW (Ta), 18W (Tc) | 11.4 mOhm @ 6.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 24A 8TSON-ADV
|
Paquete: 8-PowerVDFN |
En existencias2.704 |
|
MOSFET (Metal Oxide) | 30V | 24A (Ta) | - | 3V @ 200µA | 26nC @ 10V | 1270pF @ 10V | - | - | - | 7 mOhm @ 12A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 12A 8SOP
|
Paquete: 8-SOIC (0.173", 4.40mm Width) |
En existencias3.200 |
|
MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 19nC @ 10V | 1800pF @ 10V | ±20V | Schottky Diode (Body) | - | 10.1 mOhm @ 6A, 10V | - | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 10A 8SOP
|
Paquete: 8-SOIC (0.173", 4.40mm Width) |
En existencias6.752 |
|
MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 15nC @ 10V | 1700pF @ 10V | ±20V | Schottky Diode (Body) | 1W (Ta) | 13.3 mOhm @ 5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 11A 8SOP
|
Paquete: 8-SOIC (0.173", 4.40mm Width) |
En existencias5.888 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 2V @ 500µA | 56nC @ 10V | 2400pF @ 10V | +20V, -25V | - | 1W (Ta) | 10 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 10A 8SOP
|
Paquete: 8-SOIC (0.154", 3.90mm Width) |
En existencias7.568 |
|
MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 2V @ 500µA | 64nC @ 10V | 2580pF @ 10V | +20V, -25V | - | 1W (Ta) | 13 mOhm @ 5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 6A VS6
|
Paquete: SOT-23-6 Thin, TSOT-23-6 |
En existencias373.284 |
|
MOSFET (Metal Oxide) | 20V | 6A (Ta) | 2.5V, 4.5V | 1.2V @ 200µA | 9nC @ 5V | 630pF @ 10V | ±12V | - | 700mW (Ta) | 20 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 6A VS6
|
Paquete: SOT-23-6 Thin, TSOT-23-6 |
En existencias3.920 |
|
MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 14nC @ 10V | 640pF @ 10V | ±20V | - | 700mW (Ta) | 20 mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 6.1A VS6
|
Paquete: SOT-23-6 Thin, TSOT-23-6 |
En existencias6.688 |
|
MOSFET (Metal Oxide) | 60V | 6.1A (Ta) | 4.5V, 10V | 2.3V @ 100µA | 12nC @ 10V | 830pF @ 10V | ±20V | - | 700mW (Ta) | 59 mOhm @ 3.1A, 10V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 5.3A VS6
|
Paquete: SOT-23-6 Thin, TSOT-23-6 |
En existencias3.392 |
|
MOSFET (Metal Oxide) | 40V | 5.3A (Ta) | 4.5V, 10V | 2.3V @ 100µA | 4.7nC @ 10V | 290pF @ 10V | ±20V | - | 700mW (Ta) | 81 mOhm @ 2.7A, 10V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 5.9A VS6
|
Paquete: SOT-23-6 Thin, TSOT-23-6 |
En existencias3.632 |
|
MOSFET (Metal Oxide) | 30V | 5.9A (Ta) | 4.5V, 10V | 2.3V @ 100µA | 4.8nC @ 10V | 300pF @ 10V | ±20V | - | 700mW (Ta) | 60 mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 50A TO-220AB
|
Paquete: - |
En existencias4.400 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220-3 | - |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 75V 50A TO-220AB
|
Paquete: TO-220-3 |
En existencias5.408 |
|
MOSFET (Metal Oxide) | 75V | 50A | - | - | 55nC @ 10V | - | - | - | - | 12 mOhm @ 25A, 10V | - | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 50A TO-220AB
|
Paquete: TO-220-3 |
En existencias3.248 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 50A TO-220AB
|
Paquete: TO-220-3 |
En existencias3.552 |
|
MOSFET (Metal Oxide) | 60V | 50A | - | - | 54nC @ 10V | - | - | - | - | 8.5 mOhm @ 25A, 10V | - | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.7A DPAK-3
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias6.016 |
|
MOSFET (Metal Oxide) | 600V | 3.7A (Ta) | 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | ±30V | - | 80W (Tc) | 2 Ohm @ 1.9A, 10V | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.5A DPAK-3
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias3.216 |
|
MOSFET (Metal Oxide) | 600V | 3.5A (Ta) | 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | ±30V | - | 80W (Tc) | 2.2 Ohm @ 1.8A, 10V | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 4A DPAK-3
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias48.000 |
|
MOSFET (Metal Oxide) | 550V | 4A (Ta) | 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | ±30V | - | 80W (Tc) | 1.88 Ohm @ 2A, 10V | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 3.5A DPAK-3
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias3.920 |
|
MOSFET (Metal Oxide) | 550V | 3.5A (Ta) | 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | ±30V | - | 80W (Tc) | 2.45 Ohm @ 1.8A, 10V | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 4A DPAK-3
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias2.432 |
|
MOSFET (Metal Oxide) | 500V | 4A (Ta) | 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | ±30V | - | 80W (Tc) | 2 Ohm @ 2A, 10V | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 3.5A TO-220SIS
|
Paquete: TO-220-3 Full Pack |
En existencias7.008 |
|
MOSFET (Metal Oxide) | 650V | 3.5A (Ta) | 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | ±30V | - | 35W (Tc) | 1.9 Ohm @ 1.8A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.7A TO-220SIS
|
Paquete: TO-220-3 Full Pack |
En existencias3.488 |
|
MOSFET (Metal Oxide) | 600V | 3.7A (Ta) | 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | ±30V | - | 35W (Tc) | 2 Ohm @ 1.9A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 4A TO-220SIS
|
Paquete: TO-220-3 Full Pack |
En existencias5.168 |
|
MOSFET (Metal Oxide) | 550V | 4A (Ta) | 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | ±30V | - | 35W (Tc) | 1.88 Ohm @ 2A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 3.5A TO-220SIS
|
Paquete: TO-220-3 Full Pack |
En existencias4.976 |
|
MOSFET (Metal Oxide) | 550V | 3.5A (Ta) | 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | ±30V | - | 30W (Tc) | 2.45 Ohm @ 1.8A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |