Página 26 - STMicroelectronics Productos - Transistores - FET, MOSFET - Simple | Heisener Electronics
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STMicroelectronics Productos - Transistores - FET, MOSFET - Simple

Registros 2.492
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Paquete
En existencias
Cantidad
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot STD3NK60ZT4
STMicroelectronics

MOSFET N-CH 600V 2.4A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 311pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias679.296
MOSFET (Metal Oxide)
600V
2.4A (Tc)
10V
4.5V @ 50µA
11.8nC @ 10V
311pF @ 25V
±30V
-
45W (Tc)
3.6 Ohm @ 1.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
STS5P3LLH6
STMicroelectronics

MOSFET P-CH 30V 5A 8SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 639pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta)
  • Rds On (Max) @ Id, Vgs: 56 mOhm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias26.952
MOSFET (Metal Oxide)
30V
5A (Ta)
4.5V, 10V
2.5V @ 250µA
6nC @ 4.5V
639pF @ 25V
±20V
-
2.7W (Ta)
56 mOhm @ 2.5A, 10V
150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot STS11N3LLH5
STMicroelectronics

MOSFET N-CH 30V 11A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 724pF @ 25V
  • Vgs (Max): +22V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias422.460
MOSFET (Metal Oxide)
30V
11A (Tc)
4.5V, 10V
1V @ 250µA
5nC @ 4.5V
724pF @ 25V
+22V, -20V
-
2.7W (Tc)
14 mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
STQ1HN60K3-AP
STMicroelectronics

MOSFET N-CH 600V 0.4A TO-92

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 600mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias17.946
MOSFET (Metal Oxide)
600V
400mA (Tc)
10V
4.5V @ 50µA
9.5nC @ 10V
140pF @ 50V
±30V
-
3W (Tc)
8 Ohm @ 600mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
STL4P3LLH6
STMicroelectronics

MOSFET P-CH 30V 4A POWERFLAT

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 639pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 56 mOhm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (2x2)
  • Package / Case: 6-PowerWDFN
Paquete: 6-PowerWDFN
En existencias28.764
MOSFET (Metal Oxide)
30V
4A (Ta)
4.5V, 10V
2.5V @ 250µA
6nC @ 4.5V
639pF @ 25V
±20V
-
2.4W (Ta)
56 mOhm @ 2A, 10V
150°C (TJ)
Surface Mount
PowerFlat? (2x2)
6-PowerWDFN
STE40NC60
STMicroelectronics

MOSFET N-CH 600V 40A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 40A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 460W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: ISOTOP
Paquete: ISOTOP
En existencias6.660
MOSFET (Metal Oxide)
600V
40A
10V
4V @ 250µA
430nC @ 10V
11100pF @ 25V
±30V
-
460W (Tc)
130 mOhm @ 20A, 10V
150°C (TJ)
Chassis Mount
ISOTOP?
ISOTOP
STW88N65M5-4
STMicroelectronics

MOSFET N-CH 650V 84A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 204nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8825pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 450W (Tc)
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 42A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
Paquete: TO-247-4
En existencias15.492
MOSFET (Metal Oxide)
650V
84A (Tc)
10V
5V @ 250µA
204nC @ 10V
8825pF @ 100V
±25V
-
450W (Tc)
29 mOhm @ 42A, 10V
150°C (TJ)
Through Hole
TO-247-4L
TO-247-4
STWA40N95K5
STMicroelectronics

N-CHANNEL 950 V, 0.110 OHM TYP.,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 950V
  • Current - Continuous Drain (Id) @ 25°C: 38A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 450W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 19A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias6.564
MOSFET (Metal Oxide)
950V
38A
10V
5V @ 100µA
93nC @ 10V
3300pF @ 100V
±30V
-
450W (Tc)
130 mOhm @ 19A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
STWA12N120K5
STMicroelectronics

MOSFET N-CH 1200V 12A TO-247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 44.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 690 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias9.720
MOSFET (Metal Oxide)
1200V
12A (Tc)
10V
5V @ 100µA
44.2nC @ 10V
1370pF @ 100V
±30V
-
250W (Tc)
690 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3
hot STW45NM60
STMicroelectronics

MOSFET N-CH 650V 45A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 134nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 417W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 22.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias48.276
MOSFET (Metal Oxide)
650V
45A (Tc)
10V
5V @ 250µA
134nC @ 10V
3800pF @ 25V
±30V
-
417W (Tc)
110 mOhm @ 22.5A, 10V
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
STW58N65DM2AG
STMicroelectronics

MOSFET N-CH 650V 48A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 24A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias17.640
MOSFET (Metal Oxide)
650V
48A (Tc)
10V
5V @ 250µA
88nC @ 10V
4100pF @ 100V
±25V
-
360W (Tc)
65 mOhm @ 24A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
STW56N65DM2
STMicroelectronics

MOSFET N-CH 650V 48A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 24A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias23.376
MOSFET (Metal Oxide)
650V
48A (Tc)
10V
5V @ 250µA
88nC @ 10V
4100pF @ 100V
±25V
-
360W (Tc)
65 mOhm @ 24A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
STF12N120K5
STMicroelectronics

MOSFET N-CH 1200V 12A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 44.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 690 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
Paquete: TO-220-3 Full Pack
En existencias18.876
MOSFET (Metal Oxide)
1200V
12A (Tc)
10V
5V @ 100µA
44.2nC @ 10V
1370pF @ 100V
±30V
-
40W (Tc)
690 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot STW56N60DM2
STMicroelectronics

MOSFET N-CH 600V 50A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias5.872
MOSFET (Metal Oxide)
600V
50A (Tc)
10V
5V @ 250µA
90nC @ 10V
4100pF @ 100V
±25V
-
360W (Tc)
60 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
STWA48N60M2
STMicroelectronics

MOSFET N-CH 600V 42A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3060pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias17.328
MOSFET (Metal Oxide)
600V
42A (Tc)
10V
4V @ 250µA
70nC @ 10V
3060pF @ 100V
±25V
-
300W (Tc)
70 mOhm @ 21A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3
STFW42N60M2-EP
STMicroelectronics

MOSFET N-CH 600V 34A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 87 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
Paquete: TO-3P-3 Full Pack
En existencias8.316
MOSFET (Metal Oxide)
600V
34A (Tc)
10V
4V @ 250µA
55nC @ 10V
2370pF @ 100V
±25V
-
63W (Tc)
87 mOhm @ 17A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
STW48N60DM2
STMicroelectronics

MOSFET N-CH 600V 40A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 79 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias15.336
MOSFET (Metal Oxide)
600V
40A (Tc)
10V
5V @ 250µA
70nC @ 10V
3250pF @ 100V
±25V
-
300W (Tc)
79 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
STW50N65DM2AG
STMicroelectronics

MOSFET N-CH 650V 28A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 87 mOhm @ 19A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias15.732
MOSFET (Metal Oxide)
650V
28A (Tc)
10V
5V @ 250µA
70nC @ 10V
3200pF @ 100V
±25V
-
300W (Tc)
87 mOhm @ 19A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
STF20N90K5
STMicroelectronics

N-CHANNEL 900 V, 0.24 OHM TYP.,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: Current Sensing
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
Paquete: TO-220-3 Full Pack
En existencias7.356
MOSFET (Metal Oxide)
900V
20A
10V
5V @ 100µA
40nC @ 10V
1500pF @ 100V
±30V
Current Sensing
40W (Tc)
250 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot STF20N95K5
STMicroelectronics

MOSFET N-CH 950V 17.5A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 950V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 330 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
Paquete: TO-220-3 Full Pack
En existencias5.824
MOSFET (Metal Oxide)
950V
17.5A (Tc)
10V
5V @ 100µA
40nC @ 10V
1500pF @ 100V
±30V
-
40W (Tc)
330 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
STW20N90K5
STMicroelectronics

N-CHANNEL 900 V, 0.24 OHM TYP.,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: Current Sensing
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias15.180
MOSFET (Metal Oxide)
900V
20A
10V
5V @ 100µA
40nC @ 10V
1500pF @ 100V
±30V
Current Sensing
250W (Tc)
250 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
STP20N90K5
STMicroelectronics

N-CHANNEL 900 V, 0.24 OHM TYP.,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: Current Sensing
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias6.108
MOSFET (Metal Oxide)
900V
20A
10V
5V @ 100µA
40nC @ 10V
1500pF @ 100V
±30V
Current Sensing
250W (Tc)
250 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
STW31N65M5
STMicroelectronics

MOSFET N-CH 650V 22A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 148 mOhm @ 11A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias11.556
MOSFET (Metal Oxide)
650V
22A (Tc)
10V
5V @ 250µA
45nC @ 10V
816pF @ 100V
±25V
-
150W (Tc)
148 mOhm @ 11A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
STW43N60DM2
STMicroelectronics

MOSFET N-CH 600V 34A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 93 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias8.052
MOSFET (Metal Oxide)
600V
34A (Tc)
10V
5V @ 250µA
56nC @ 10V
2500pF @ 100V
±25V
-
250W (Tc)
93 mOhm @ 17A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
STW45N60DM2AG
STMicroelectronics

MOSFET N-CH 600V 34A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 93 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias10.812
MOSFET (Metal Oxide)
600V
34A (Tc)
10V
5V @ 250µA
56nC @ 10V
2500pF @ 100V
±25V
-
250W (Tc)
93 mOhm @ 17A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
STW27N60M2-EP
STMicroelectronics

MOSFET N-CH 600V 20A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 163 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias15.084
MOSFET (Metal Oxide)
600V
20A (Tc)
10V
4V @ 250µA
33nC @ 10V
1320pF @ 100V
±25V
-
170W (Tc)
163 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot STW35N60DM2
STMicroelectronics

MOSFET N-CH 600V 28A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 210W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias6.160
MOSFET (Metal Oxide)
600V
28A (Tc)
10V
5V @ 250µA
54nC @ 10V
2400pF @ 100V
±25V
-
210W (Tc)
110 mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
STW37N60DM2AG
STMicroelectronics

MOSFET N-CH 600V 28A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 210W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias19.776
MOSFET (Metal Oxide)
600V
28A (Tc)
10V
5V @ 250µA
54nC @ 10V
2400pF @ 100V
±25V
-
210W (Tc)
110 mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3